Loads on click. Unloads only if this page sits in the background.

Symbol & Footprint

Schematic Symbol

Open full view ↗
Loads on click. Unloads only if this page sits in the background.

PCB Footprint

Open full view ↗
Loads on click. Unloads only if this page sits in the background.
Loads on click. Unloads only if this page sits in the background.
Download PDF
Contents

README

markdown

DRV8300DRGER

Texas Instruments · Gate Drivers · VQFN-24(4x4)

DRV8300DRGER from Texas Instruments, in a VQFN-24(4x4). Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 INLA input Low-side gate driver control input for phase A; VIL ≤ 0.8 V, VIH ≥ 2.0 V; 120-280 kΩ pull-down to GND in non-inverting mode or pull-up to INT_5V in inverting mode.
2 INLB input Low-side gate driver control input for phase B; VIL ≤ 0.8 V, VIH ≥ 2.0 V; 120-280 kΩ pull-down to GND in non-inverting mode or pull-up to INT_5V in inverting mode.
3 INLC input Low-side gate driver control input for phase C; VIL ≤ 0.8 V, VIH ≥ 2.0 V; 120-280 kΩ pull-down to GND in non-inverting mode or pull-up to INT_5V in inverting mode.
4 GVDD power_in Gate driver power supply input; recommended operating range 5 V to 20 V; connect ≥10 µF X5R/X7R ceramic decoupling capacitor between GVDD and GND.
5 MODE input Mode input selects GLx output polarity: floating = non-inverted (GLx in phase with INLx), connected to GVDD = inverted; VIL ≤ 0.6 V, VIH ≥ 3.7 V; 120-280 kΩ pull-down to GND.
6 GND power_in Device ground.
7 NC unconnected No internal connection; may be left floating or connected to system ground.
8 NC unconnected No internal connection; may be left floating or connected to system ground.
9 GLC output Low-side gate driver output for phase C; connect to gate of low-side power MOSFET; peak source 750 mA, peak sink 1.5 A; voltage swings 0 V to VGVDD.
10 GLB output Low-side gate driver output for phase B; connect to gate of low-side power MOSFET; peak source 750 mA, peak sink 1.5 A; voltage swings 0 V to VGVDD.
11 GLA output Low-side gate driver output for phase A; connect to gate of low-side power MOSFET; peak source 750 mA, peak sink 1.5 A; voltage swings 0 V to VGVDD.
12 SHC passive High-side source sense input for phase C; connect to source of high-side power MOSFET (switch node); rated −2 V to 85 V DC, transient −22 V / 2 µs; leakage current ≤ 80 µA at VSHx = 0-85 V.
13 GHC output High-side gate driver output for phase C; connect to gate of high-side power MOSFET; peak source 750 mA, peak sink 1.5 A; absolute maximum 125 V; swings between SHC and BSTC.
14 BSTC output Bootstrap output for phase C; connect capacitor between BSTC and SHC (≥100 nF recommended); absolute maximum 125 V; DRV8300D uses integrated bootstrap diode from GVDD.
15 SHB passive High-side source sense input for phase B; connect to source of high-side power MOSFET (switch node); rated −2 V to 85 V DC, transient −22 V / 2 µs; leakage current ≤ 80 µA at VSHx = 0-85 V.
16 GHB output High-side gate driver output for phase B; connect to gate of high-side power MOSFET; peak source 750 mA, peak sink 1.5 A; absolute maximum 125 V; swings between SHB and BSTB.
17 BSTB output Bootstrap output for phase B; connect capacitor between BSTB and SHB (≥100 nF recommended); absolute maximum 125 V; DRV8300D uses integrated bootstrap diode from GVDD.
18 SHA passive High-side source sense input for phase A; connect to source of high-side power MOSFET (switch node); rated −2 V to 85 V DC, transient −22 V / 2 µs; leakage current ≤ 80 µA at VSHx = 0-85 V.
19 GHA output High-side gate driver output for phase A; connect to gate of high-side power MOSFET; peak source 750 mA, peak sink 1.5 A; absolute maximum 125 V; swings between SHA and BSTA.
20 BSTA output Bootstrap output for phase A; connect capacitor between BSTA and SHA (≥100 nF recommended); absolute maximum 125 V; DRV8300D uses integrated bootstrap diode from GVDD.
21 DT input Deadtime control input (QFN-24 only); connect resistor to GND for variable deadtime (200 ns to 2000 ns linearly adjustable); floating = 215 ns typical fixed deadtime.
22 INHA input High-side gate driver control input for phase A; VIL ≤ 0.8 V, VIH ≥ 2.0 V; 120-280 kΩ pull-down to GND.
23 INHB input High-side gate driver control input for phase B; VIL ≤ 0.8 V, VIH ≥ 2.0 V; 120-280 kΩ pull-down to GND.
24 INHC input High-side gate driver control input for phase C; VIL ≤ 0.8 V, VIH ≥ 2.0 V; 120-280 kΩ pull-down to GND.
25 PowerPAD power_in Exposed thermal pad; must be soldered to PCB thermal pad for thermal and mechanical performance; RθJC(bot) = 11.5 °C/W.

Key specifications

Parameter Value
Manufacturer Texas Instruments
Package VQFN-24(4x4)
Category Motor Driver ICs
Pins 25

CAD (KiCad official)

  • Symbol: DRV8300DRGER
  • Footprint: Package_DFN_QFN:QFN-24-1EP_4x4mm_P0.5mm_EP2.7x2.7mm
  • 3D model: VQFN-24(4x4) (KiCad packages3D, STEP)
  • 3D model files: drv8300drger-etched.step / drv8300drger-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); drv8300drger.step / drv8300drger.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Texas Instruments datasheet (35 pp, sha256 ce0cba4354bb3566, retrieved 2026-09-22, tier: lcsc)
  • Datasheet language: Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
  • Extractor: parts-factory 2.0.0 / extract_pins 0.2, primary claude-haiku-4-5-20251001 (text), consensus claude-sonnet-4-6 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF