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DRV5015A1QDBZT
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Texas Instruments Hall Sensor, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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DRV5015A1QDBZT
Texas Instruments · Hall Sensor · SOT-23
DRV5015A1QDBZT from Texas Instruments, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | VCC | power_in | 2.5-V to 5.5-V power supply; connect a ceramic capacitor of at least 0.01 µF between VCC and ground. |
| 2 | OUT | output | Open-drain output; pull-up voltage max 5.5 V and output sinking current up to 20 mA recommended. |
| 3 | GND | power_in | Ground reference. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Texas Instruments |
| Package | SOT-23 |
| Category | Sensors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Operating supply current | ICC | 2.3 | 2.8 | mA | VCC = 2.5 V to 5.5 V | 4 | |
| Power-on time | tON | 40 | 70 | µs | VCC = 2.5 V to 5.5 V | 4 | |
| Propagation delay time | td | 13 | 25 | µs | B = BRP, 10 mT to BOP + 10 mT in 1 µs | 4 | |
| High-impedance output leakage current | IOZ | 100 | nA | 5.5 V applied to OUT, while OUT is high-impedance | 4 | ||
| Low-level output voltage | VOL | 0.15 | 0.4 | V | IOUT = 20 mA | 4 | |
| Sensing bandwidth | fBW | 20 | 30 | kHz | VCC = 2.5 V to 5.5 V | 4 | |
| Magnetic threshold operate point | BOP | -0.2 | 0.7 | 2 | mT | DRV5015A1 | 4 |
| Magnetic threshold release point | BRP | -2 | -0.7 | 0.2 | mT | DRV5015A1 | 4 |
| Magnetic hysteresis /BOP, BRP/ | BHYS | 0.35 | 1.4 | mT | DRV5015A1 | 4 | |
| Power supply voltage | VCC | 2.5 | 5.5 | V | 4 | ||
| Output pin voltage | VOUT | 0 | 5.5 | V | 4 | ||
| Output sinking current | IOUT | 0 | 20 | mA | 4 | ||
| Operating ambient temperature | TA | -40 | 125 | °C | 4 | ||
| Power supply voltage | VCC | -0.3 | 6 | V | 3 | ||
| Output voltage | VOUT | -0.3 | 6 | V | 3 | ||
| Output current | IOUT | 30 | mA | 3 | |||
| Operating junction temperature | TJ | -40 | 150 | °C | 3 | ||
| Storage temperature | Tstg | -65 | 150 | °C | 3 | ||
| ESD HBM | V(ESD) | -5000 | 5000 | V | Human body model (HBM), per ANSI/ESDA/JEDEC JS-001 | 3 | |
| ESD CDM | V(ESD) | -1500 | 1500 | V | Charged device model (CDM), per JEDEC specification JESD22-C101 | 3 | |
| Junction-to-ambient thermal resistance | RθJA | 356 | °C/W | SOT-23 (DBZ), 3 pins | 4 | ||
| Junction-to-case (top) thermal resistance | RθJC(top) | 128 | °C/W | SOT-23 (DBZ), 3 pins | 4 | ||
| Junction-to-board thermal resistance | RθJB | 94 | °C/W | SOT-23 (DBZ), 3 pins | 4 | ||
| Junction-to-top characterization parameter | YJT | 11.4 | °C/W | SOT-23 (DBZ), 3 pins | 4 | ||
| Junction-to-board characterization parameter | YJB | 92 | °C/W | SOT-23 (DBZ), 3 pins | 4 |
CAD (KiCad official)
- Symbol:
DRV5015A1QDBZT - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
drv5015a1qdbzt-etched.step/drv5015a1qdbzt-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);drv5015a1qdbzt.step/drv5015a1qdbzt.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Texas Instruments datasheet (28 pp, sha256
393af117b90fea84, retrieved 2026-10-23, tier: manufacturer) - Datasheet language: Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
- Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# DRV5015A1QDBZT
**Texas Instruments** · Hall Sensor · SOT-23
DRV5015A1QDBZT from Texas Instruments, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | VCC | power_in | 2.5-V to 5.5-V power supply; connect a ceramic capacitor of at least 0.01 µF between VCC and ground. |
| 2 | OUT | output | Open-drain output; pull-up voltage max 5.5 V and output sinking current up to 20 mA recommended. |
| 3 | GND | power_in | Ground reference. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Texas Instruments |
| Package | SOT-23 |
| Category | Sensors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Operating supply current | ICC | | 2.3 | 2.8 | mA | VCC = 2.5 V to 5.5 V | 4 |
| Power-on time | tON | | 40 | 70 | µs | VCC = 2.5 V to 5.5 V | 4 |
| Propagation delay time | td | | 13 | 25 | µs | B = BRP, 10 mT to BOP + 10 mT in 1 µs | 4 |
| High-impedance output leakage current | IOZ | | | 100 | nA | 5.5 V applied to OUT, while OUT is high-impedance | 4 |
| Low-level output voltage | VOL | | 0.15 | 0.4 | V | IOUT = 20 mA | 4 |
| Sensing bandwidth | fBW | 20 | 30 | | kHz | VCC = 2.5 V to 5.5 V | 4 |
| Magnetic threshold operate point | BOP | -0.2 | 0.7 | 2 | mT | DRV5015A1 | 4 |
| Magnetic threshold release point | BRP | -2 | -0.7 | 0.2 | mT | DRV5015A1 | 4 |
| Magnetic hysteresis /BOP, BRP/ | BHYS | 0.35 | 1.4 | | mT | DRV5015A1 | 4 |
| Power supply voltage | VCC | 2.5 | | 5.5 | V | | 4 |
| Output pin voltage | VOUT | 0 | | 5.5 | V | | 4 |
| Output sinking current | IOUT | 0 | | 20 | mA | | 4 |
| Operating ambient temperature | TA | -40 | | 125 | °C | | 4 |
| Power supply voltage | VCC | -0.3 | | 6 | V | | 3 |
| Output voltage | VOUT | -0.3 | | 6 | V | | 3 |
| Output current | IOUT | | | 30 | mA | | 3 |
| Operating junction temperature | TJ | -40 | | 150 | °C | | 3 |
| Storage temperature | Tstg | -65 | | 150 | °C | | 3 |
| ESD HBM | V(ESD) | -5000 | | 5000 | V | Human body model (HBM), per ANSI/ESDA/JEDEC JS-001 | 3 |
| ESD CDM | V(ESD) | -1500 | | 1500 | V | Charged device model (CDM), per JEDEC specification JESD22-C101 | 3 |
| Junction-to-ambient thermal resistance | RθJA | | 356 | | °C/W | SOT-23 (DBZ), 3 pins | 4 |
| Junction-to-case (top) thermal resistance | RθJC(top) | | 128 | | °C/W | SOT-23 (DBZ), 3 pins | 4 |
| Junction-to-board thermal resistance | RθJB | | 94 | | °C/W | SOT-23 (DBZ), 3 pins | 4 |
| Junction-to-top characterization parameter | YJT | | 11.4 | | °C/W | SOT-23 (DBZ), 3 pins | 4 |
| Junction-to-board characterization parameter | YJB | | 92 | | °C/W | SOT-23 (DBZ), 3 pins | 4 |
## CAD (KiCad official)
- Symbol: `DRV5015A1QDBZT`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `drv5015a1qdbzt-etched.step` / `drv5015a1qdbzt-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `drv5015a1qdbzt.step` / `drv5015a1qdbzt.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Texas Instruments datasheet](https://www.ti.com/lit/ds/symlink/drv5015a1qdbzt.pdf) (28 pp, sha256 `393af117b90fea84`, retrieved 2026-10-23, tier: manufacturer)
- **Datasheet language:** Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/drv5015a1qdbzt-datasheet.pdf)