component
DPLS350Y-13
Public Made by Adomby adom
Diodes Incorporated Bipolar Transistors - BJT, SOT-89. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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DPLS350Y-13
Diodes Incorporated · Bipolar Transistors - BJT · SOT-89
DPLS350Y-13 from Diodes Incorporated, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base; the datasheet rates VEBO at -6V and base current IB at -500mA. |
| 2 | C | passive | Collector (also the exposed collector tab); rated VCEO -50V, IC -3A continuous and ICM -5A peak. |
| 3 | E | passive | Emitter of the PNP transistor; VEBO is limited to -6V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | SOT-89 |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Base Breakdown Voltage | BVCBO | -50 | V | IC = -100µA | 4 | ||
| Collector-Emitter Breakdown Voltage | BVCEO | -50 | V | IC = -10mA | 4 | ||
| Emitter-Base Breakdown Voltage | BVEBO | -6 | V | IE = -100µA | 4 | ||
| Collector-Emitter Cut-off Current | ICES | -100 | nA | VCE = -50V | 4 | ||
| Collector Cut-off Current | ICBO | -100 | nA | VCB = -50V | 4 | ||
| Collector Cut-off Current | ICBO | -50 | µA | VCB = -50V, TA = +150°C | 4 | ||
| Emitter Cut-off Current | IEBO | -100 | nA | VEB = -5V | 4 | ||
| Static Forward Current Transfer Ratio | hFE | 200 | IC = -100mA, VCE = -2V | 4 | |||
| Static Forward Current Transfer Ratio | hFE | 200 | 450 | IC = -1A, VCE = -2V | 4 | ||
| Static Forward Current Transfer Ratio | hFE | 130 | IC = -2A, VCE = -2V | 4 | |||
| Static Forward Current Transfer Ratio | hFE | 80 | IC = -3A, VCE = -2V | 4 | |||
| Collector-Emitter Saturation Voltage | VCE(sat) | -90 | mV | IC = -500mA, IB = -50mA | 4 | ||
| Collector-Emitter Saturation Voltage | VCE(sat) | -180 | mV | IC = -1A, IB = -50mA | 4 | ||
| Collector-Emitter Saturation Voltage | VCE(sat) | -320 | mV | IC = -2A, IB = -100mA | 4 | ||
| Collector-Emitter Saturation Voltage | VCE(sat) | -270 | mV | IC = -2A, IB = -200mA | 4 | ||
| Collector-Emitter Saturation Voltage | VCE(sat) | -390 | mV | IC = -3A, IB = -300mA | 4 | ||
| Equivalent On-Resistance | RCE(sat) | 67 | 135 | mΩ | IC = -2A, IB = -200mA | 4 | |
| Base-Emitter Saturation Voltage | VBE(sat) | -1.1 | V | IC = -2A, IB = -100mA | 4 | ||
| Base-Emitter Saturation Voltage | VBE(sat) | -1.2 | V | IC = -3A, IB = -300mA | 4 | ||
| Base-Emitter Turn-On Voltage | VBE(on) | -1.1 | V | IC = -1A, VCE = -2V | 4 | ||
| Transition Frequency | fT | 100 | MHz | IC = -100mA, VCE = -5V, f = 100MHz | 4 | ||
| Collector Output Capacitance | Cobo | 35 | pF | VCB = -10V, IE = 0, f = 1MHz | 4 | ||
| Collector-Base Voltage | VCBO | -50 | V | TA = +25°C | 2 | ||
| Collector-Emitter Voltage | VCEO | -50 | V | TA = +25°C | 2 | ||
| Emitter-Base Voltage | VEBO | -6 | V | TA = +25°C | 2 | ||
| Continuous Collector Current | IC | -3 | A | TA = +25°C | 2 | ||
| Peak Pulse Current | ICM | -5 | A | TA = +25°C | 2 | ||
| Base Current | IB | -500 | mA | TA = +25°C | 2 | ||
| Power Dissipation | PD | 1 | W | Note 5: 15mm x 15mm 1oz copper | 2 | ||
| Power Dissipation | PD | 1.6 | W | Note 6: 25mm x 25mm 1oz copper | 2 | ||
| Power Dissipation | PD | 2 | W | Note 7: 50mm x 50mm 1oz copper | 2 | ||
| Thermal Resistance, Junction to Ambient Air | RθJA | 125 | °C/W | Note 5: 15mm x 15mm 1oz copper | 2 | ||
| Thermal Resistance, Junction to Ambient Air | RθJA | 78 | °C/W | Note 6: 25mm x 25mm 1oz copper | 2 | ||
| Thermal Resistance, Junction to Ambient Air | RθJA | 62.5 | °C/W | Note 7: 50mm x 50mm 1oz copper | 2 | ||
| Thermal Resistance, Junction to Lead | RθJL | 5.7 | °C/W | Note 8: junction to solder-point on exposed collector pad | 2 | ||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 2 | ||
| Electrostatic Discharge - Human Body Model | ESD HBM | 4000 | V | JEDEC Class 3A | 2 | ||
| Electrostatic Discharge - Machine Model | ESD MM | 400 | V | JEDEC Class C | 2 | ||
| Turn-On Time | t(ON) | 87 | ns | VCC = -30v, ICC = 150mA, IB1 = - IB2 =15mA | 4 | ||
| Delay Time | tD | 41 | ns | VCC = -30v, ICC = 150mA, IB1 = - IB2 =15mA | 4 | ||
| Rise Time | tR | 46 | ns | VCC = -30v, ICC = 150mA, IB1 = - IB2 =15mA | 4 | ||
| Turn-Off Time | t(OFF) | 294 | ns | VCC = -30v, ICC = 150mA, IB1 = - IB2 =15mA | 4 | ||
| Storage Time | tS | 250 | ns | VCC = -30v, ICC = 150mA, IB1 = - IB2 =15mA | 4 | ||
| Fall Time | tF | 44 | ns | VCC = -30v, ICC = 150mA, IB1 = - IB2 =15mA | 4 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | tin | Terminals: Finish - Matte Tin Plated Leads, Solderable per MIL-STD-202, Method 208 | 1 |
CAD (KiCad official)
- Symbol:
DPLS350Y-13 - Footprint:
Package_TO_SOT_SMD:SOT-89-3 - 3D model: SOT-89 (KiCad packages3D, STEP)
- 3D model files:
dpls350y-13-etched.step/dpls350y-13-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);dpls350y-13.step/dpls350y-13.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Diodes Incorporated datasheet (8 pp, sha256
1745faffe7c124b5, retrieved 2026-10-22, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# DPLS350Y-13
**Diodes Incorporated** · Bipolar Transistors - BJT · SOT-89
DPLS350Y-13 from Diodes Incorporated, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base; the datasheet rates VEBO at -6V and base current IB at -500mA. |
| 2 | C | passive | Collector (also the exposed collector tab); rated VCEO -50V, IC -3A continuous and ICM -5A peak. |
| 3 | E | passive | Emitter of the PNP transistor; VEBO is limited to -6V. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | SOT-89 |
| Category | Transistors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Base Breakdown Voltage | BVCBO | -50 | | | V | IC = -100µA | 4 |
| Collector-Emitter Breakdown Voltage | BVCEO | -50 | | | V | IC = -10mA | 4 |
| Emitter-Base Breakdown Voltage | BVEBO | -6 | | | V | IE = -100µA | 4 |
| Collector-Emitter Cut-off Current | ICES | | | -100 | nA | VCE = -50V | 4 |
| Collector Cut-off Current | ICBO | | | -100 | nA | VCB = -50V | 4 |
| Collector Cut-off Current | ICBO | | | -50 | µA | VCB = -50V, TA = +150°C | 4 |
| Emitter Cut-off Current | IEBO | | | -100 | nA | VEB = -5V | 4 |
| Static Forward Current Transfer Ratio | hFE | 200 | | | | IC = -100mA, VCE = -2V | 4 |
| Static Forward Current Transfer Ratio | hFE | 200 | | 450 | | IC = -1A, VCE = -2V | 4 |
| Static Forward Current Transfer Ratio | hFE | 130 | | | | IC = -2A, VCE = -2V | 4 |
| Static Forward Current Transfer Ratio | hFE | 80 | | | | IC = -3A, VCE = -2V | 4 |
| Collector-Emitter Saturation Voltage | VCE(sat) | | | -90 | mV | IC = -500mA, IB = -50mA | 4 |
| Collector-Emitter Saturation Voltage | VCE(sat) | | | -180 | mV | IC = -1A, IB = -50mA | 4 |
| Collector-Emitter Saturation Voltage | VCE(sat) | | | -320 | mV | IC = -2A, IB = -100mA | 4 |
| Collector-Emitter Saturation Voltage | VCE(sat) | | | -270 | mV | IC = -2A, IB = -200mA | 4 |
| Collector-Emitter Saturation Voltage | VCE(sat) | | | -390 | mV | IC = -3A, IB = -300mA | 4 |
| Equivalent On-Resistance | RCE(sat) | | 67 | 135 | mΩ | IC = -2A, IB = -200mA | 4 |
| Base-Emitter Saturation Voltage | VBE(sat) | | | -1.1 | V | IC = -2A, IB = -100mA | 4 |
| Base-Emitter Saturation Voltage | VBE(sat) | | | -1.2 | V | IC = -3A, IB = -300mA | 4 |
| Base-Emitter Turn-On Voltage | VBE(on) | | | -1.1 | V | IC = -1A, VCE = -2V | 4 |
| Transition Frequency | fT | 100 | | | MHz | IC = -100mA, VCE = -5V, f = 100MHz | 4 |
| Collector Output Capacitance | Cobo | | | 35 | pF | VCB = -10V, IE = 0, f = 1MHz | 4 |
| Collector-Base Voltage | VCBO | | | -50 | V | TA = +25°C | 2 |
| Collector-Emitter Voltage | VCEO | | | -50 | V | TA = +25°C | 2 |
| Emitter-Base Voltage | VEBO | | | -6 | V | TA = +25°C | 2 |
| Continuous Collector Current | IC | | | -3 | A | TA = +25°C | 2 |
| Peak Pulse Current | ICM | | | -5 | A | TA = +25°C | 2 |
| Base Current | IB | | | -500 | mA | TA = +25°C | 2 |
| Power Dissipation | PD | | | 1 | W | Note 5: 15mm x 15mm 1oz copper | 2 |
| Power Dissipation | PD | | | 1.6 | W | Note 6: 25mm x 25mm 1oz copper | 2 |
| Power Dissipation | PD | | | 2 | W | Note 7: 50mm x 50mm 1oz copper | 2 |
| Thermal Resistance, Junction to Ambient Air | RθJA | | 125 | | °C/W | Note 5: 15mm x 15mm 1oz copper | 2 |
| Thermal Resistance, Junction to Ambient Air | RθJA | | 78 | | °C/W | Note 6: 25mm x 25mm 1oz copper | 2 |
| Thermal Resistance, Junction to Ambient Air | RθJA | | 62.5 | | °C/W | Note 7: 50mm x 50mm 1oz copper | 2 |
| Thermal Resistance, Junction to Lead | RθJL | | 5.7 | | °C/W | Note 8: junction to solder-point on exposed collector pad | 2 |
| Operating and Storage Temperature Range | TJ, TSTG | -55 | | 150 | °C | | 2 |
| Electrostatic Discharge - Human Body Model | ESD HBM | | | 4000 | V | JEDEC Class 3A | 2 |
| Electrostatic Discharge - Machine Model | ESD MM | | | 400 | V | JEDEC Class C | 2 |
| Turn-On Time | t(ON) | | 87 | | ns | VCC = -30v, ICC = 150mA, IB1 = - IB2 =15mA | 4 |
| Delay Time | tD | | 41 | | ns | VCC = -30v, ICC = 150mA, IB1 = - IB2 =15mA | 4 |
| Rise Time | tR | | 46 | | ns | VCC = -30v, ICC = 150mA, IB1 = - IB2 =15mA | 4 |
| Turn-Off Time | t(OFF) | | 294 | | ns | VCC = -30v, ICC = 150mA, IB1 = - IB2 =15mA | 4 |
| Storage Time | tS | | 250 | | ns | VCC = -30v, ICC = 150mA, IB1 = - IB2 =15mA | 4 |
| Fall Time | tF | | 44 | | ns | VCC = -30v, ICC = 150mA, IB1 = - IB2 =15mA | 4 |
## Materials and finish
As the datasheet states them (page.json `metadata.appearance`; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | | tin | Terminals: Finish - Matte Tin Plated Leads, Solderable per MIL-STD-202, Method 208 | 1 |
## CAD (KiCad official)
- Symbol: `DPLS350Y-13`
- Footprint: `Package_TO_SOT_SMD:SOT-89-3`
- 3D model: SOT-89 (KiCad packages3D, STEP)
- 3D model files: `dpls350y-13-etched.step` / `dpls350y-13-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `dpls350y-13.step` / `dpls350y-13.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Diodes Incorporated datasheet](https://www.diodes.com/assets/Datasheets/DPLS350Y-13.pdf) (8 pp, sha256 `1745faffe7c124b5`, retrieved 2026-10-22, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/dpls350y-13-datasheet.pdf)