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DPLS350Y-13

Diodes Incorporated · Bipolar Transistors - BJT · SOT-89

DPLS350Y-13 from Diodes Incorporated, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	B	input	Base; the datasheet rates VEBO at -6V and base current IB at -500mA.
2	C	passive	Collector (also the exposed collector tab); rated VCEO -50V, IC -3A continuous and ICM -5A peak.
3	E	passive	Emitter of the PNP transistor; VEBO is limited to -6V.

Key specifications

Parameter	Value
Manufacturer	Diodes Incorporated
Package	SOT-89
Category	Transistors
Pins	3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
Collector-Base Breakdown Voltage	BVCBO	-50			V	IC = -100µA	4
Collector-Emitter Breakdown Voltage	BVCEO	-50			V	IC = -10mA	4
Emitter-Base Breakdown Voltage	BVEBO	-6			V	IE = -100µA	4
Collector-Emitter Cut-off Current	ICES			-100	nA	VCE = -50V	4
Collector Cut-off Current	ICBO			-100	nA	VCB = -50V	4
Collector Cut-off Current	ICBO			-50	µA	VCB = -50V, TA = +150°C	4
Emitter Cut-off Current	IEBO			-100	nA	VEB = -5V	4
Static Forward Current Transfer Ratio	hFE	200				IC = -100mA, VCE = -2V	4
Static Forward Current Transfer Ratio	hFE	200		450		IC = -1A, VCE = -2V	4
Static Forward Current Transfer Ratio	hFE	130				IC = -2A, VCE = -2V	4
Static Forward Current Transfer Ratio	hFE	80				IC = -3A, VCE = -2V	4
Collector-Emitter Saturation Voltage	VCE(sat)			-90	mV	IC = -500mA, IB = -50mA	4
Collector-Emitter Saturation Voltage	VCE(sat)			-180	mV	IC = -1A, IB = -50mA	4
Collector-Emitter Saturation Voltage	VCE(sat)			-320	mV	IC = -2A, IB = -100mA	4
Collector-Emitter Saturation Voltage	VCE(sat)			-270	mV	IC = -2A, IB = -200mA	4
Collector-Emitter Saturation Voltage	VCE(sat)			-390	mV	IC = -3A, IB = -300mA	4
Equivalent On-Resistance	RCE(sat)		67	135	mΩ	IC = -2A, IB = -200mA	4
Base-Emitter Saturation Voltage	VBE(sat)			-1.1	V	IC = -2A, IB = -100mA	4
Base-Emitter Saturation Voltage	VBE(sat)			-1.2	V	IC = -3A, IB = -300mA	4
Base-Emitter Turn-On Voltage	VBE(on)			-1.1	V	IC = -1A, VCE = -2V	4
Transition Frequency	fT	100			MHz	IC = -100mA, VCE = -5V, f = 100MHz	4
Collector Output Capacitance	Cobo			35	pF	VCB = -10V, IE = 0, f = 1MHz	4
Collector-Base Voltage	VCBO			-50	V	TA = +25°C	2
Collector-Emitter Voltage	VCEO			-50	V	TA = +25°C	2
Emitter-Base Voltage	VEBO			-6	V	TA = +25°C	2
Continuous Collector Current	IC			-3	A	TA = +25°C	2
Peak Pulse Current	ICM			-5	A	TA = +25°C	2
Base Current	IB			-500	mA	TA = +25°C	2
Power Dissipation	PD			1	W	Note 5: 15mm x 15mm 1oz copper	2
Power Dissipation	PD			1.6	W	Note 6: 25mm x 25mm 1oz copper	2
Power Dissipation	PD			2	W	Note 7: 50mm x 50mm 1oz copper	2
Thermal Resistance, Junction to Ambient Air	RθJA		125		°C/W	Note 5: 15mm x 15mm 1oz copper	2
Thermal Resistance, Junction to Ambient Air	RθJA		78		°C/W	Note 6: 25mm x 25mm 1oz copper	2
Thermal Resistance, Junction to Ambient Air	RθJA		62.5		°C/W	Note 7: 50mm x 50mm 1oz copper	2
Thermal Resistance, Junction to Lead	RθJL		5.7		°C/W	Note 8: junction to solder-point on exposed collector pad	2
Operating and Storage Temperature Range	TJ, TSTG	-55		150	°C		2
Electrostatic Discharge - Human Body Model	ESD HBM			4000	V	JEDEC Class 3A	2
Electrostatic Discharge - Machine Model	ESD MM			400	V	JEDEC Class C	2
Turn-On Time	t(ON)		87		ns	VCC = -30v, ICC = 150mA, IB1 = - IB2 =15mA	4
Delay Time	tD		41		ns	VCC = -30v, ICC = 150mA, IB1 = - IB2 =15mA	4
Rise Time	tR		46		ns	VCC = -30v, ICC = 150mA, IB1 = - IB2 =15mA	4
Turn-Off Time	t(OFF)		294		ns	VCC = -30v, ICC = 150mA, IB1 = - IB2 =15mA	4
Storage Time	tS		250		ns	VCC = -30v, ICC = 150mA, IB1 = - IB2 =15mA	4
Fall Time	tF		44		ns	VCC = -30v, ICC = 150mA, IB1 = - IB2 =15mA	4

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part	Material	Colour / plating	Datasheet says	Page
contacts		tin	 Terminals: Finish - Matte Tin Plated Leads, Solderable per MIL-STD-202, Method 208	1

CAD (KiCad official)

Symbol: DPLS350Y-13
Footprint: Package_TO_SOT_SMD:SOT-89-3
3D model: SOT-89 (KiCad packages3D, STEP)
3D model files: dpls350y-13-etched.step / dpls350y-13-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); dpls350y-13.step / dpls350y-13.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: Diodes Incorporated datasheet (8 pp, sha256 1745faffe7c124b5, retrieved 2026-10-22, tier: manufacturer)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF