component
DP6580
Public Made by Adomby adom
Shenzhen Developer Microelec MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 18d ago |
| viewers | 18d ago |
| dp6580-etched.glb | 18d ago |
| dp6580-etched.step | 18d ago |
| dp6580-hero.glb | 18d ago |
| dp6580-hero.overlay.json | 18d ago |
| dp6580.glb | 18d ago |
| dp6580.kicad_mod | 18d ago |
| dp6580.kicad_sym | 18d ago |
| dp6580.lbr | 18d ago |
| dp6580.step | 18d ago |
| package.json | 18d ago |
| page.json | 18d ago |
| README.md | 18d ago |
DP6580
Shenzhen Developer Microelec · MOSFETs · TO-252
DP6580 from Shenzhen Developer Microelec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; drive with VGS up to ±25 V absolute maximum, threshold VGS(th) 2 V min, 3 V typ, 4 V max at VDS=VGS, ID=250 µA. |
| 2 | D | passive | Drain, connected to the exposed tab; VDS rated 65 V and continuous ID 85 A (silicon limit) at TC=25°C. |
| 3 | S | passive | Source; body diode forward voltage VSD 0.9 V typ, 1.3 V max at ISD=40 A, RDS(on) 7.1 mΩ typ at VGS=10 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Shenzhen Developer Microelec |
| Package | TO-252 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | BVDSS | 65 | V | VGS=0V, ID=250uA | 3 | ||
| Gate threshold voltage | VGS(th) | 2 | 3 | 4 | V | VDS=VGS, ID=250uA | 3 |
| Zero gate voltage drain current (Tj=25°C) | IDSS | 0.05 | 1 | µA | VDS=65V, VGS=0V, Tj=25°C | 3 | |
| Zero gate voltage drain current (Tj=125°C) | IDSS | 5 | µA | VDS=65V, VGS=0V, Tj=125°C | 3 | ||
| Gate-source leakage current | IGSS | 10 | 100 | nA | VGS=25V, VDS=0V | 3 | |
| Drain-source on-state resistance | RDS(on) | 7.1 | 8.4 | mΩ | VGS=10V, ID=40A, Tj=25°C | 3 | |
| Body diode forward voltage | VSD | 0.9 | 1.3 | V | VGS=0V, ISD=40A | 4 | |
| Drain-source voltage | VDS | 65 | V | 2 | |||
| Continuous drain current (silicon limit) | ID | 85 | A | TC = 25°C (Silicon limit) | 2 | ||
| Continuous drain current (package limit) | ID | 87 | A | TC = 25°C (Package limit) | 2 | ||
| Continuous drain current (silicon limit) | ID | 54 | A | TC = 100°C (Silicon limit) | 2 | ||
| Pulsed drain current | ID pulse | 340 | A | TC = 25°C, tp limited by Tjmax | 2 | ||
| Avalanche energy, single pulse | EAS | 400 | mJ | L=0.5mH, Rg=25Ω | 2 | ||
| Gate-source voltage | VGS | -25 | 25 | V | 3 | ||
| Power dissipation | Ptot | 98 | W | TC = 25°C | 3 | ||
| Operating junction and storage temperature | Tj, Tstg | -55 | 150 | °C | 3 | ||
| Thermal resistance, junction to case | RthJC | 1.27 | °C/W | junction to case | 3 | ||
| Thermal resistance, junction to ambient | RthJA | 102 | °C/W | junction to ambient (min. footprint) | 3 |
CAD (KiCad official)
- Symbol:
DP6580 - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
dp6580-etched.step/dp6580-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);dp6580.step/dp6580.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Shenzhen Developer Microelec datasheet (12 pp, sha256
7c5a693082ea169c, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).