component
DP053N08BG
Public Made by Adomby adom
Shenzhen Developer Microelec. MOSFETs, TO-263. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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DP053N08BG
Shenzhen Developer Microelec. · MOSFETs · TO-263
DP053N08BG from Shenzhen Developer Microelec., in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel, with VGS rated ±20 V maximum and a gate threshold voltage VGS(th) tested at VDS=VGS, ID=250uA. |
| 2 | D | passive | Drain, which is also the exposed metal tab; rated for VDS of 80 V and continuous ID of 120 A (package limit) at TC=25°C. |
| 3 | S | passive | Source; the body diode runs from source to drain, with continuous forward current Is of 120 A at TC=25°C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Shenzhen Developer Microelec. |
| Package | TO-263 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | BVDSS | 80 | V | VGS=0V, ID=250uA | 2 | ||
| Gate threshold voltage | VGS(th) | 2 | 3 | 4 | V | VDS=VGS,ID=250uA | 2 |
| Zero gate voltage drain current | IDSS | 0.02 | 1 | μA | VDS=80V,VGS=0V, Tj=25°C | 2 | |
| Zero gate voltage drain current | IDSS | 100 | μA | VDS=80V,VGS=0V, Tj=125°C | 2 | ||
| Gate-source leakage current | IGSS | -100 | 100 | nA | VGS=±20V,VDS=0V | 2 | |
| Drain-source on-state resistance (TO-263) | RDS(on) | 4.4 | 5.3 | mΩ | VGS=10V, ID=60A, TO-263 | 2 | |
| Gate resistance | Rg | 1.3 | 2.6 | Ω | VGS=0V, VDS=0V, f=1MHz | 2 | |
| Body diode forward voltage | VSD | 0.92 | 1.3 | V | VGS=0V,ISD=60A | 3 | |
| Drain-source voltage | VDS | 80 | V | 1 | |||
| Gate-Source voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous drain current (Silicon limit) | ID | 129 | A | TC = 25°C (Silicon limit) | 1 | ||
| Continuous drain current (Package limit) | ID | 120 | A | TC = 25°C (Package limit) | 1 | ||
| Continuous drain current (Silicon limit) | ID | 82 | A | TC = 100°C (Silicon limit) | 1 | ||
| Pulsed drain current | ID pulse | 480 | A | TC = 25°C, tp limited by Tjmax | 1 | ||
| Avalanche energy, single pulse | EAS | 289 | mJ | ID=34A, Rg=25, starting Tj = 25℃, VGS = 10V | 1 | ||
| Power dissipation | Ptot | 179 | W | TC = 25°C | 1 | ||
| Operating junction and storage temperature | Tj, Tstg | -55 | 150 | °C | 1 | ||
| Thermal resistance, junction, case | RthJC | 0.7 | °C/W | 2 | |||
| Input capacitance | Ciss | 3100 | pF | VGS=0V, VDS=40V, f=1MHz | 2 | ||
| Output capacitance | Coss | 640 | pF | VGS=0V, VDS=40V, f=1MHz | 2 | ||
| Reverse transfer capacitance | Crss | 18 | pF | VGS=0V, VDS=40V, f=1MHz | 2 | ||
| Gate total charge | Qg | 58 | nC | VGS=10V, VDS=40V, ID=60A, f=1MHz | 2 | ||
| Transconductance | gfs | 84 | S | VDS=5V,ID=60A | 2 |
CAD (KiCad official)
- Symbol:
DP053N08BG - Footprint:
Package_TO_SOT_SMD:TO-263-2 - 3D model: TO-263 (KiCad packages3D, STEP)
- 3D model files:
dp053n08bg-etched.step/dp053n08bg-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);dp053n08bg.step/dp053n08bg.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Shenzhen Developer Microelec. datasheet (10 pp, sha256
5cad61f02348e31f, retrieved 2026-10-23, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# DP053N08BG
**Shenzhen Developer Microelec.** · MOSFETs · TO-263
DP053N08BG from Shenzhen Developer Microelec., in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the channel, with VGS rated ±20 V maximum and a gate threshold voltage VGS(th) tested at VDS=VGS, ID=250uA. |
| 2 | D | passive | Drain, which is also the exposed metal tab; rated for VDS of 80 V and continuous ID of 120 A (package limit) at TC=25°C. |
| 3 | S | passive | Source; the body diode runs from source to drain, with continuous forward current Is of 120 A at TC=25°C. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Shenzhen Developer Microelec. |
| Package | TO-263 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | BVDSS | 80 | | | V | VGS=0V, ID=250uA | 2 |
| Gate threshold voltage | VGS(th) | 2 | 3 | 4 | V | VDS=VGS,ID=250uA | 2 |
| Zero gate voltage drain current | IDSS | | 0.02 | 1 | μA | VDS=80V,VGS=0V, Tj=25°C | 2 |
| Zero gate voltage drain current | IDSS | | | 100 | μA | VDS=80V,VGS=0V, Tj=125°C | 2 |
| Gate-source leakage current | IGSS | -100 | | 100 | nA | VGS=±20V,VDS=0V | 2 |
| Drain-source on-state resistance (TO-263) | RDS(on) | | 4.4 | 5.3 | mΩ | VGS=10V, ID=60A, TO-263 | 2 |
| Gate resistance | Rg | | 1.3 | 2.6 | Ω | VGS=0V, VDS=0V, f=1MHz | 2 |
| Body diode forward voltage | VSD | | 0.92 | 1.3 | V | VGS=0V,ISD=60A | 3 |
| Drain-source voltage | VDS | | | 80 | V | | 1 |
| Gate-Source voltage | VGS | -20 | | 20 | V | | 1 |
| Continuous drain current (Silicon limit) | ID | | | 129 | A | TC = 25°C (Silicon limit) | 1 |
| Continuous drain current (Package limit) | ID | | | 120 | A | TC = 25°C (Package limit) | 1 |
| Continuous drain current (Silicon limit) | ID | | | 82 | A | TC = 100°C (Silicon limit) | 1 |
| Pulsed drain current | ID pulse | | | 480 | A | TC = 25°C, tp limited by Tjmax | 1 |
| Avalanche energy, single pulse | EAS | | | 289 | mJ | ID=34A, Rg=25, starting Tj = 25℃, VGS = 10V | 1 |
| Power dissipation | Ptot | | | 179 | W | TC = 25°C | 1 |
| Operating junction and storage temperature | Tj, Tstg | -55 | | 150 | °C | | 1 |
| Thermal resistance, junction, case | RthJC | | | 0.7 | °C/W | | 2 |
| Input capacitance | Ciss | | 3100 | | pF | VGS=0V, VDS=40V, f=1MHz | 2 |
| Output capacitance | Coss | | 640 | | pF | VGS=0V, VDS=40V, f=1MHz | 2 |
| Reverse transfer capacitance | Crss | | 18 | | pF | VGS=0V, VDS=40V, f=1MHz | 2 |
| Gate total charge | Qg | | 58 | | nC | VGS=10V, VDS=40V, ID=60A, f=1MHz | 2 |
| Transconductance | gfs | | 84 | | S | VDS=5V,ID=60A | 2 |
## CAD (KiCad official)
- Symbol: `DP053N08BG`
- Footprint: `Package_TO_SOT_SMD:TO-263-2`
- 3D model: TO-263 (KiCad packages3D, STEP)
- 3D model files: `dp053n08bg-etched.step` / `dp053n08bg-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `dp053n08bg.step` / `dp053n08bg.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Shenzhen Developer Microelec. datasheet](docs/dp053n08bg-datasheet.pdf) (10 pp, sha256 `5cad61f02348e31f`, retrieved 2026-10-23, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/dp053n08bg-datasheet.pdf)