component

DP053N08BG

Public Made by Adom

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Shenzhen Developer Microelec. MOSFETs, TO-263. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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DP053N08BG

Shenzhen Developer Microelec. · MOSFETs · TO-263

DP053N08BG from Shenzhen Developer Microelec., in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; controls the channel, with VGS rated ±20 V maximum and a gate threshold voltage VGS(th) tested at VDS=VGS, ID=250uA.
2 D passive Drain, which is also the exposed metal tab; rated for VDS of 80 V and continuous ID of 120 A (package limit) at TC=25°C.
3 S passive Source; the body diode runs from source to drain, with continuous forward current Is of 120 A at TC=25°C.

Key specifications

Parameter Value
Manufacturer Shenzhen Developer Microelec.
Package TO-263
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source breakdown voltage BVDSS 80 V VGS=0V, ID=250uA 2
Gate threshold voltage VGS(th) 2 3 4 V VDS=VGS,ID=250uA 2
Zero gate voltage drain current IDSS 0.02 1 μA VDS=80V,VGS=0V, Tj=25°C 2
Zero gate voltage drain current IDSS 100 μA VDS=80V,VGS=0V, Tj=125°C 2
Gate-source leakage current IGSS -100 100 nA VGS=±20V,VDS=0V 2
Drain-source on-state resistance (TO-263) RDS(on) 4.4 5.3 mΩ VGS=10V, ID=60A, TO-263 2
Gate resistance Rg 1.3 2.6 Ω VGS=0V, VDS=0V, f=1MHz 2
Body diode forward voltage VSD 0.92 1.3 V VGS=0V,ISD=60A 3
Drain-source voltage VDS 80 V 1
Gate-Source voltage VGS -20 20 V 1
Continuous drain current (Silicon limit) ID 129 A TC = 25°C (Silicon limit) 1
Continuous drain current (Package limit) ID 120 A TC = 25°C (Package limit) 1
Continuous drain current (Silicon limit) ID 82 A TC = 100°C (Silicon limit) 1
Pulsed drain current ID pulse 480 A TC = 25°C, tp limited by Tjmax 1
Avalanche energy, single pulse EAS 289 mJ ID=34A, Rg=25, starting Tj = 25℃, VGS = 10V 1
Power dissipation Ptot 179 W TC = 25°C 1
Operating junction and storage temperature Tj, Tstg -55 150 °C 1
Thermal resistance, junction, case RthJC 0.7 °C/W 2
Input capacitance Ciss 3100 pF VGS=0V, VDS=40V, f=1MHz 2
Output capacitance Coss 640 pF VGS=0V, VDS=40V, f=1MHz 2
Reverse transfer capacitance Crss 18 pF VGS=0V, VDS=40V, f=1MHz 2
Gate total charge Qg 58 nC VGS=10V, VDS=40V, ID=60A, f=1MHz 2
Transconductance gfs 84 S VDS=5V,ID=60A 2

CAD (KiCad official)

  • Symbol: DP053N08BG
  • Footprint: Package_TO_SOT_SMD:TO-263-2
  • 3D model: TO-263 (KiCad packages3D, STEP)
  • 3D model files: dp053n08bg-etched.step / dp053n08bg-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); dp053n08bg.step / dp053n08bg.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Shenzhen Developer Microelec. datasheet (10 pp, sha256 5cad61f02348e31f, retrieved 2026-10-23, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF