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DOS4435

Public Made by Adom

by adom

DOINGTER MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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DOS4435

DOINGTER · MOSFETs · SOP-8

DOS4435 from DOINGTER, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source of the P-channel MOSFET (pins 1-3 are source); VDS rating is -30V.
2 S passive Source of the P-channel MOSFET (pins 1-3 are source); tie together with pins 1 and 3.
3 S passive Source of the P-channel MOSFET (pins 1-3 are source); tie together with pins 1 and 2.
4 G input Gate of the P-channel MOSFET with a maximum gate-source voltage of ±20V and threshold of -1.1V to -1.9V.
5 D passive Drain of the P-channel MOSFET (pins 5-8 are drain); continuous drain current -10A at TA=25°C.
6 D passive Drain of the P-channel MOSFET (pins 5-8 are drain); tie together with pins 5, 7 and 8.
7 D passive Drain of the P-channel MOSFET (pins 5-8 are drain); tie together with pins 5, 6 and 8.
8 D passive Drain of the P-channel MOSFET (pins 5-8 are drain); pulsed drain current -50A.

Key specifications

Parameter Value
Manufacturer DOINGTER
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -30 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID -10 A TA=25℃ 1
Continuous Drain Current ID -7 A TC=100℃ 1
Drain Current-Pulsed IDM -50 A 1
Power Dissipation PD 4 W 1
Operating and Storage Junction Temperature Range TJ, TSTG -55 150 ℃ 1
Single pulse avalanche energy EAS 47 mJ Single pulse; note 2: Starting TJ=25C, VDD=30V, VG=10V, RG=25ohm, L=0.5mH, IAS=13.5A 1
Thermal Resistance, Junction to Ambient RθJA 30 ℃/W Note 3: mounted on 1 inch² pad of 2oz copper FR4 PCB 1
Drain-Source Breakdown Voltage BVDSS -30 V VGS=0V, ID=250μA 2
Zero Gate Voltage Drain Current IDSS -1 μA VGS=0V, VDS=-10V 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0A 2
Gate-Source Threshold Voltage VGS(th) -1.1 -1.5 -1.9 V VGS=VDS, ID=250μA 2
Drain-Source On Resistance RDS(ON) 12 15 mΩ VGS=-10V, ID=-10A 2
Drain-Source On Resistance RDS(ON) 19 23 mΩ VGS=-4.5V, ID=-5A 2
Diode Forward Voltage VSD -0.75 -1 V VGS=0V, IS=-1A 2
Maximum Continuous Drain to Source Diode Forward Current IS -10 A VG=VD=0 2
Max. Pulsed Forward Current ISM -50 A VG=VD=0V 2

CAD (KiCad official)

  • Symbol: DOS4435
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: dos4435-etched.step / dos4435-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); dos4435.step / dos4435.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: DOINGTER datasheet (6 pp, sha256 a928df277b86126f, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF