component
DOS4435
Public Made by Adomby adom
DOINGTER MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownDOS4435
DOINGTER · MOSFETs · SOP-8
DOS4435 from DOINGTER, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the P-channel MOSFET (pins 1-3 are source); VDS rating is -30V. |
| 2 | S | passive | Source of the P-channel MOSFET (pins 1-3 are source); tie together with pins 1 and 3. |
| 3 | S | passive | Source of the P-channel MOSFET (pins 1-3 are source); tie together with pins 1 and 2. |
| 4 | G | input | Gate of the P-channel MOSFET with a maximum gate-source voltage of ±20V and threshold of -1.1V to -1.9V. |
| 5 | D | passive | Drain of the P-channel MOSFET (pins 5-8 are drain); continuous drain current -10A at TA=25°C. |
| 6 | D | passive | Drain of the P-channel MOSFET (pins 5-8 are drain); tie together with pins 5, 7 and 8. |
| 7 | D | passive | Drain of the P-channel MOSFET (pins 5-8 are drain); tie together with pins 5, 6 and 8. |
| 8 | D | passive | Drain of the P-channel MOSFET (pins 5-8 are drain); pulsed drain current -50A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | DOINGTER |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -30 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | -10 | A | TA=25℃ | 1 | ||
| Continuous Drain Current | ID | -7 | A | TC=100℃ | 1 | ||
| Drain Current-Pulsed | IDM | -50 | A | 1 | |||
| Power Dissipation | PD | 4 | W | 1 | |||
| Operating and Storage Junction Temperature Range | TJ, TSTG | -55 | 150 | ℃ | 1 | ||
| Single pulse avalanche energy | EAS | 47 | mJ | Single pulse; note 2: Starting TJ=25C, VDD=30V, VG=10V, RG=25ohm, L=0.5mH, IAS=13.5A | 1 | ||
| Thermal Resistance, Junction to Ambient | RθJA | 30 | ℃/W | Note 3: mounted on 1 inch² pad of 2oz copper FR4 PCB | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | -30 | V | VGS=0V, ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | μA | VGS=0V, VDS=-10V | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0A | 2 | |
| Gate-Source Threshold Voltage | VGS(th) | -1.1 | -1.5 | -1.9 | V | VGS=VDS, ID=250μA | 2 |
| Drain-Source On Resistance | RDS(ON) | 12 | 15 | mΩ | VGS=-10V, ID=-10A | 2 | |
| Drain-Source On Resistance | RDS(ON) | 19 | 23 | mΩ | VGS=-4.5V, ID=-5A | 2 | |
| Diode Forward Voltage | VSD | -0.75 | -1 | V | VGS=0V, IS=-1A | 2 | |
| Maximum Continuous Drain to Source Diode Forward Current | IS | -10 | A | VG=VD=0 | 2 | ||
| Max. Pulsed Forward Current | ISM | -50 | A | VG=VD=0V | 2 |
CAD (KiCad official)
- Symbol:
DOS4435 - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
dos4435-etched.step/dos4435-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);dos4435.step/dos4435.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: DOINGTER datasheet (6 pp, sha256
a928df277b86126f, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).