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DOS12N04

Public Made by Adom

by adom

DOINGTER MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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DOS12N04

DOINGTER · MOSFETs · SOP-8

DOS12N04 from DOINGTER, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source of the N-channel MOSFET (Pins 1-3 are source), VDS rated 40V and continuous drain current 12A at TC=25℃.
2 S passive Source of the N-channel MOSFET (Pins 1-3 are source), VDS rated 40V and continuous drain current 12A at TC=25℃.
3 S passive Source of the N-channel MOSFET (Pins 1-3 are source), VDS rated 40V and continuous drain current 12A at TC=25℃.
4 G input Gate of the N-channel MOSFET, with absolute maximum gate-source voltage of ±20V and threshold VGS(th) 1.1V min to 2.5V max.
5 D passive Drain of the N-channel MOSFET (Pins 5-8 are drain), VDS rated 40V and pulsed drain current 60A.
6 D passive Drain of the N-channel MOSFET (Pins 5-8 are drain), VDS rated 40V and pulsed drain current 60A.
7 D passive Drain of the N-channel MOSFET (Pins 5-8 are drain), VDS rated 40V and pulsed drain current 60A.
8 D passive Drain of the N-channel MOSFET (Pins 5-8 are drain), VDS rated 40V and pulsed drain current 60A.

Key specifications

Parameter Value
Manufacturer DOINGTER
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 40 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID 12 A TC=25℃ 1
Continuous Drain Current ID 10 A TC=100℃ 1
Drain Current-Pulsed IDM 60 A 1
Single Pulsed Avalanche Energy EAS 81 mJ Note 2: TJ=25℃, VDD=20V, VG=10V, RG=25Ω, L=0.5mH, IAS=18A 1
Power Dissipation PD 4 W 1
Operating and Storage Junction Temperature Range TJ, TSTG -55 150 ℃ 1
Thermal Resistance, Junction to Ambient RθJA 31.7 ℃/W 1
Drain-Source Breakdown Voltage BVDSS 40 V VGS=0V, ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VGS=0V, VDS=40V 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0A 2
Gate-Source Threshold Voltage VGS(th) 1.1 1.5 2.5 V VGS=VDS, ID=250μA 2
Drain-Source On Resistance RDS(ON) 7 9 mΩ VGS=10V, ID=15A 2
Drain-Source On Resistance RDS(ON) 10.4 14 mΩ VGS=4.5V, ID=10A 2
Diode Forward Voltage VSD 1.2 V VGS=0V, IS=15A 2
Source drain current (Body Diode) IS 12 A VD=VG=0V 2
Pulsed Drain to Source Diode Current ISM 60 A VD=VG=0V 3

CAD (KiCad official)

  • Symbol: DOS12N04
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: dos12n04-etched.step / dos12n04-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); dos12n04.step / dos12n04.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: DOINGTER datasheet (4 pp, sha256 3bac5a3ad8db566a, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF