component
DOS12N04
Public Made by Adomby adom
DOINGTER MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownDOS12N04
DOINGTER · MOSFETs · SOP-8
DOS12N04 from DOINGTER, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the N-channel MOSFET (Pins 1-3 are source), VDS rated 40V and continuous drain current 12A at TC=25℃. |
| 2 | S | passive | Source of the N-channel MOSFET (Pins 1-3 are source), VDS rated 40V and continuous drain current 12A at TC=25℃. |
| 3 | S | passive | Source of the N-channel MOSFET (Pins 1-3 are source), VDS rated 40V and continuous drain current 12A at TC=25℃. |
| 4 | G | input | Gate of the N-channel MOSFET, with absolute maximum gate-source voltage of ±20V and threshold VGS(th) 1.1V min to 2.5V max. |
| 5 | D | passive | Drain of the N-channel MOSFET (Pins 5-8 are drain), VDS rated 40V and pulsed drain current 60A. |
| 6 | D | passive | Drain of the N-channel MOSFET (Pins 5-8 are drain), VDS rated 40V and pulsed drain current 60A. |
| 7 | D | passive | Drain of the N-channel MOSFET (Pins 5-8 are drain), VDS rated 40V and pulsed drain current 60A. |
| 8 | D | passive | Drain of the N-channel MOSFET (Pins 5-8 are drain), VDS rated 40V and pulsed drain current 60A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | DOINGTER |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 40 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | 12 | A | TC=25℃ | 1 | ||
| Continuous Drain Current | ID | 10 | A | TC=100℃ | 1 | ||
| Drain Current-Pulsed | IDM | 60 | A | 1 | |||
| Single Pulsed Avalanche Energy | EAS | 81 | mJ | Note 2: TJ=25℃, VDD=20V, VG=10V, RG=25Ω, L=0.5mH, IAS=18A | 1 | ||
| Power Dissipation | PD | 4 | W | 1 | |||
| Operating and Storage Junction Temperature Range | TJ, TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance, Junction to Ambient | RθJA | 31.7 | ℃/W | 1 | |||
| Drain-Source Breakdown Voltage | BVDSS | 40 | V | VGS=0V, ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VGS=0V, VDS=40V | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0A | 2 | |
| Gate-Source Threshold Voltage | VGS(th) | 1.1 | 1.5 | 2.5 | V | VGS=VDS, ID=250μA | 2 |
| Drain-Source On Resistance | RDS(ON) | 7 | 9 | mΩ | VGS=10V, ID=15A | 2 | |
| Drain-Source On Resistance | RDS(ON) | 10.4 | 14 | mΩ | VGS=4.5V, ID=10A | 2 | |
| Diode Forward Voltage | VSD | 1.2 | V | VGS=0V, IS=15A | 2 | ||
| Source drain current (Body Diode) | IS | 12 | A | VD=VG=0V | 2 | ||
| Pulsed Drain to Source Diode Current | ISM | 60 | A | VD=VG=0V | 3 |
CAD (KiCad official)
- Symbol:
DOS12N04 - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
dos12n04-etched.step/dos12n04-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);dos12n04.step/dos12n04.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: DOINGTER datasheet (4 pp, sha256
3bac5a3ad8db566a, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).