# DOD60P03

**DOINGTER** · MOSFETs · TO-252

DOD60P03 from DOINGTER, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the P-channel MOSFET; gate-source voltage is rated ±20 V and threshold VGS(th) is -1 V min to -2 V max at ID=-250 µA. |
| 2 | D | passive | Drain of the P-channel MOSFET (also the exposed tab); VDS is rated -30 V and continuous drain current is -60 A at TC=25°C. |
| 3 | S | passive | Source of the P-channel MOSFET; body-diode continuous forward current is -60 A max and pulsed -210 A max. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | DOINGTER |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -30 |  |  | V |  | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Continuous Drain Current | ID | -60 |  |  | A | TC=25°C | 1 |
| Continuous Drain Current | ID | -44 |  |  | A | TC=100°C | 1 |
| Drain Current - Pulsed | IDM | -240 |  |  | A | Note 1: repetitive rating, pulse width limited by maximum junction temperature | 1 |
| Power Dissipation | PD |  |  | 110 | W | TC=25°C | 1 |
| Operating and Storage Junction Temperature Range | TJ, TSTG | -55 |  | 150 | °C |  | 1 |
| Thermal Resistance, Junction to Case |  |  |  | 1.4 |  |  | 1 |
| Drain-Source Breakdown Voltage | V(BR)DSS | -30 |  |  | V | VGS=0V, ID=250µA | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | -1 | µA | VGS=0V, VDS=-30V, TJ=25°C | 2 |
| Gate-Source Leakage Current | IGSS | -100 |  | 100 | nA | VGS=±20V, VDS=0A | 2 |
| Gate-Source Threshold Voltage | VGS(th) | -1 | -1.5 | -2 | V | VGS=VDS, ID=-250µA | 2 |
| Drain-Source On Resistance | RDS(ON) |  | 5.7 | 7.5 | mΩ | VGS=-10V, ID=-20A | 2 |
| Drain-Source On Resistance | RDS(ON) |  | 8 | 10.5 | mΩ | VGS=-4.5V, ID=-20A | 2 |
| Source-Drain Diode Forward Voltage | VSD |  |  | -1.2 | V | VGS=0V, IS=20A | 2 |
| Diode Forward Current | IS |  |  | -60 | A | VD=VG=0V | 2 |
| Diode Forward Current (pulsed) | ISM |  |  | -210 | A | VD=VG=0V | 2 |

## CAD (KiCad official)

- Symbol: `DOD60P03`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `dod60p03-etched.step` / `dod60p03-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `dod60p03.step` / `dod60p03.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [DOINGTER datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8604442579605995520) (6 pp, sha256 `9bae6b08b12a7397`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/dod60p03-datasheet.pdf)