component
DOD60P03
Public Made by Adomby adom
DOINGTER MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 24d ago |
| viewers | 24d ago |
| dod60p03-etched.glb | 24d ago |
| dod60p03-etched.step | 24d ago |
| dod60p03-hero.glb | 24d ago |
| dod60p03-hero.overlay.json | 24d ago |
| dod60p03.glb | 24d ago |
| dod60p03.kicad_mod | 24d ago |
| dod60p03.kicad_sym | 24d ago |
| dod60p03.lbr | 24d ago |
| dod60p03.step | 24d ago |
| package.json | 24d ago |
| page.json | 24d ago |
| README.md | 24d ago |
DOD60P03
DOINGTER · MOSFETs · TO-252
DOD60P03 from DOINGTER, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the P-channel MOSFET; gate-source voltage is rated ±20 V and threshold VGS(th) is -1 V min to -2 V max at ID=-250 µA. |
| 2 | D | passive | Drain of the P-channel MOSFET (also the exposed tab); VDS is rated -30 V and continuous drain current is -60 A at TC=25°C. |
| 3 | S | passive | Source of the P-channel MOSFET; body-diode continuous forward current is -60 A max and pulsed -210 A max. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | DOINGTER |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -30 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | -60 | A | TC=25°C | 1 | ||
| Continuous Drain Current | ID | -44 | A | TC=100°C | 1 | ||
| Drain Current - Pulsed | IDM | -240 | A | Note 1: repetitive rating, pulse width limited by maximum junction temperature | 1 | ||
| Power Dissipation | PD | 110 | W | TC=25°C | 1 | ||
| Operating and Storage Junction Temperature Range | TJ, TSTG | -55 | 150 | °C | 1 | ||
| Thermal Resistance, Junction to Case | 1.4 | 1 | |||||
| Drain-Source Breakdown Voltage | V(BR)DSS | -30 | V | VGS=0V, ID=250µA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | µA | VGS=0V, VDS=-30V, TJ=25°C | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0A | 2 | |
| Gate-Source Threshold Voltage | VGS(th) | -1 | -1.5 | -2 | V | VGS=VDS, ID=-250µA | 2 |
| Drain-Source On Resistance | RDS(ON) | 5.7 | 7.5 | mΩ | VGS=-10V, ID=-20A | 2 | |
| Drain-Source On Resistance | RDS(ON) | 8 | 10.5 | mΩ | VGS=-4.5V, ID=-20A | 2 | |
| Source-Drain Diode Forward Voltage | VSD | -1.2 | V | VGS=0V, IS=20A | 2 | ||
| Diode Forward Current | IS | -60 | A | VD=VG=0V | 2 | ||
| Diode Forward Current (pulsed) | ISM | -210 | A | VD=VG=0V | 2 |
CAD (KiCad official)
- Symbol:
DOD60P03 - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
dod60p03-etched.step/dod60p03-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);dod60p03.step/dod60p03.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: DOINGTER datasheet (6 pp, sha256
9bae6b08b12a7397, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).