# DOD20P10

**DOINGTER** · MOSFETs · TO-252

DOD20P10 from DOINGTER, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±20 V, threshold VGS(th) -1.1 V to -2.2 V. |
| 2 | D | passive | Drain (also the exposed tab); drain-source voltage -100 V, continuous drain current -20 A at TC=25℃, pulsed -80 A. |
| 3 | S | passive | Source of the P-channel MOSFET; body diode continuous current -20 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | DOINGTER |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | -100 |  |  | V | VGS=0V, ID=250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | -1 | μA | VGS=0V, VDS=-100V | 2 |
| Gate-Source Leakage Current | IGSS | -100 |  | 100 | nA | VGS=±20V, VDS=0A | 2 |
| Gate-Source Threshold Voltage | VGS(th) | -1.1 | -1.6 | -2.2 | V | VGS=VDS, ID=250μA | 2 |
| Drain-Source On Resistance | RDS(ON) |  | 80 | 100 | mΩ | VGS=-10V, ID=-3A | 2 |
| Drain-Source On Resistance | RDS(ON) |  | 90 | 120 | mΩ | VGS=-4.5V, ID=-2A | 2 |
| Diode Forward Voltage | VSD |  |  | -1.2 | V | VGS=0V, ISD=-4A | 2 |
| Continuous Drain Current (diode) | IS |  |  | -20 | A | VD=VG=0V | 2 |
| Pulsed Drain Current (diode) | ISM |  |  | -80 | A |  | 2 |
| Drain-Source Voltage | VDS |  |  | -100 | V |  | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Continuous Drain Current | ID |  |  | -20 | A | TC=25℃ | 1 |
| Continuous Drain Current | ID |  |  | -14 | A | TC=100℃ | 1 |
| Pulsed Drain Current | IDM |  |  | -80 | A | Note 1 (pulse width limited by max junction temperature) | 1 |
| Power Dissipation | PD |  |  | 66 | W | TC=25℃ | 1 |
| Single Pulse Avalanche Energy | EAS |  |  | 72 | mJ | TJ=25℃, VDD=-50V, VG=10V, L=0.5mH (Note 2) | 1 |
| Operating and Storage Junction Temperature Range | TJ, TSTG | -55 |  | 150 | ℃ |  | 1 |
| Thermal Resistance, Junction to Case | RθJC |  |  | 1.9 | ℃/W |  | 1 |

## CAD (KiCad official)

- Symbol: `DOD20P10`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `dod20p10-etched.step` / `dod20p10-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `dod20p10.step` / `dod20p10.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [DOINGTER datasheet](docs/dod20p10-datasheet.pdf) (6 pp, sha256 `a6fafd23624e0b77`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/dod20p10-datasheet.pdf)