component
DOD20P10
Public Made by Adomby adom
DOINGTER MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 17d ago |
| viewers | 17d ago |
| dod20p10-etched.glb | 17d ago |
| dod20p10-etched.step | 17d ago |
| dod20p10-hero.glb | 17d ago |
| dod20p10-hero.overlay.json | 17d ago |
| dod20p10.glb | 17d ago |
| dod20p10.kicad_mod | 17d ago |
| dod20p10.kicad_sym | 17d ago |
| dod20p10.lbr | 17d ago |
| dod20p10.step | 17d ago |
| package.json | 17d ago |
| page.json | 17d ago |
| README.md | 17d ago |
DOD20P10
DOINGTER · MOSFETs · TO-252
DOD20P10 from DOINGTER, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±20 V, threshold VGS(th) -1.1 V to -2.2 V. |
| 2 | D | passive | Drain (also the exposed tab); drain-source voltage -100 V, continuous drain current -20 A at TC=25℃, pulsed -80 A. |
| 3 | S | passive | Source of the P-channel MOSFET; body diode continuous current -20 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | DOINGTER |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | -100 | V | VGS=0V, ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | μA | VGS=0V, VDS=-100V | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0A | 2 | |
| Gate-Source Threshold Voltage | VGS(th) | -1.1 | -1.6 | -2.2 | V | VGS=VDS, ID=250μA | 2 |
| Drain-Source On Resistance | RDS(ON) | 80 | 100 | mΩ | VGS=-10V, ID=-3A | 2 | |
| Drain-Source On Resistance | RDS(ON) | 90 | 120 | mΩ | VGS=-4.5V, ID=-2A | 2 | |
| Diode Forward Voltage | VSD | -1.2 | V | VGS=0V, ISD=-4A | 2 | ||
| Continuous Drain Current (diode) | IS | -20 | A | VD=VG=0V | 2 | ||
| Pulsed Drain Current (diode) | ISM | -80 | A | 2 | |||
| Drain-Source Voltage | VDS | -100 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | -20 | A | TC=25℃ | 1 | ||
| Continuous Drain Current | ID | -14 | A | TC=100℃ | 1 | ||
| Pulsed Drain Current | IDM | -80 | A | Note 1 (pulse width limited by max junction temperature) | 1 | ||
| Power Dissipation | PD | 66 | W | TC=25℃ | 1 | ||
| Single Pulse Avalanche Energy | EAS | 72 | mJ | TJ=25℃, VDD=-50V, VG=10V, L=0.5mH (Note 2) | 1 | ||
| Operating and Storage Junction Temperature Range | TJ, TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance, Junction to Case | RθJC | 1.9 | ℃/W | 1 |
CAD (KiCad official)
- Symbol:
DOD20P10 - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
dod20p10-etched.step/dod20p10-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);dod20p10.step/dod20p10.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: DOINGTER datasheet (6 pp, sha256
a6fafd23624e0b77, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).