# DOB110N15

**DOINGTER** · MOSFETs · TO-263

DOB110N15 from DOINGTER, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage is rated ±20 V with a threshold VGS(th) of 2 V min to 4 V max at ID=250μA. |
| 2 | D | passive | Drain; drain-source voltage is rated 150 V and continuous drain current 110 A at TC=25℃ (package limited), and it is also connected to the exposed tab. |
| 3 | S | passive | Source; connects to the body diode anode, and continuous source current IS is 110 A max. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | DOINGTER |
| Package | TO-263 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | 150 | V |  | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Continuous Drain Current | ID |  |  | 110 | A | TC=25℃ | 1 |
| Continuous Drain Current | ID |  |  | 70 | A | TC=100℃ | 1 |
| Pulsed Drain Current | IDM |  |  | 440 | A |  | 1 |
| Power Dissipation | PD |  |  | 192 | W |  | 1 |
| Single pulse avalanche energy | EAS |  |  | 625 | mJ |  | 1 |
| Operating and Storage Junction Temperature Range | TJ, TSTG | -55 |  | 150 | ℃ |  | 1 |
| Thermal Resistance, Junction to Case | RƟJC |  |  | 0.65 | ℃/W |  | 1 |
| Thermal Resistance, Junction to Ambient | RƟJA |  |  | 50 | ℃/W |  | 2 |
| Drain-Source Breakdown Voltage | BVDSS | 150 |  |  | V | VGS=0V,ID=250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | μA | VGS=0V, VDS=150V | 2 |
| Gate-Source Leakage Current | IGSS | -100 |  | 100 | nA | VGS=±20V, VDS=0A | 2 |
| GATE-Source Threshold Voltage | VGS(th) | 2 | 3 | 4 | V | VGS=VDS, ID=250μA | 2 |
| Drain-Source On Resistance | RDS(ON) |  | 5.5 | 7 | mΩ | VGS=10V,ID=20A | 2 |
| Diode Forward Voltage | VSD |  | 0.6 | 1 | V | VGS=0V, ISD=25A | 2 |
| Continuous Drain Current (body diode) | IS |  |  | 110 | A | VD=VG=0V | 2 |
| Pulsed Drain Current (body diode) | ISM |  |  | 440 | A |  | 2 |

## CAD (KiCad official)

- Symbol: `DOB110N15`
- Footprint: `Package_TO_SOT_SMD:TO-263-2`
- 3D model: TO-263 (KiCad packages3D, STEP)
- 3D model files: `dob110n15-etched.step` / `dob110n15-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `dob110n15.step` / `dob110n15.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [DOINGTER datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8604443542039515136) (7 pp, sha256 `31a5576e3caee275`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/dob110n15-datasheet.pdf)