component
DOB110N15
Public Made by Adomby adom
DOINGTER MOSFETs, TO-263. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 7d ago |
| viewers | 7d ago |
| dob110n15-etched.glb | 7d ago |
| dob110n15-etched.step | 7d ago |
| dob110n15-hero.glb | 7d ago |
| dob110n15-hero.overlay.json | 7d ago |
| dob110n15.glb | 7d ago |
| dob110n15.kicad_mod | 7d ago |
| dob110n15.kicad_sym | 7d ago |
| dob110n15.lbr | 7d ago |
| dob110n15.step | 7d ago |
| package.json | 7d ago |
| page.json | 7d ago |
| README.md | 7d ago |
DOB110N15
DOINGTER · MOSFETs · TO-263
DOB110N15 from DOINGTER, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage is rated ±20 V with a threshold VGS(th) of 2 V min to 4 V max at ID=250μA. |
| 2 | D | passive | Drain; drain-source voltage is rated 150 V and continuous drain current 110 A at TC=25℃ (package limited), and it is also connected to the exposed tab. |
| 3 | S | passive | Source; connects to the body diode anode, and continuous source current IS is 110 A max. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | DOINGTER |
| Package | TO-263 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 150 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | 110 | A | TC=25℃ | 1 | ||
| Continuous Drain Current | ID | 70 | A | TC=100℃ | 1 | ||
| Pulsed Drain Current | IDM | 440 | A | 1 | |||
| Power Dissipation | PD | 192 | W | 1 | |||
| Single pulse avalanche energy | EAS | 625 | mJ | 1 | |||
| Operating and Storage Junction Temperature Range | TJ, TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance, Junction to Case | RƟJC | 0.65 | ℃/W | 1 | |||
| Thermal Resistance, Junction to Ambient | RƟJA | 50 | ℃/W | 2 | |||
| Drain-Source Breakdown Voltage | BVDSS | 150 | V | VGS=0V,ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VGS=0V, VDS=150V | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0A | 2 | |
| GATE-Source Threshold Voltage | VGS(th) | 2 | 3 | 4 | V | VGS=VDS, ID=250μA | 2 |
| Drain-Source On Resistance | RDS(ON) | 5.5 | 7 | mΩ | VGS=10V,ID=20A | 2 | |
| Diode Forward Voltage | VSD | 0.6 | 1 | V | VGS=0V, ISD=25A | 2 | |
| Continuous Drain Current (body diode) | IS | 110 | A | VD=VG=0V | 2 | ||
| Pulsed Drain Current (body diode) | ISM | 440 | A | 2 |
CAD (KiCad official)
- Symbol:
DOB110N15 - Footprint:
Package_TO_SOT_SMD:TO-263-2 - 3D model: TO-263 (KiCad packages3D, STEP)
- 3D model files:
dob110n15-etched.step/dob110n15-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);dob110n15.step/dob110n15.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: DOINGTER datasheet (7 pp, sha256
31a5576e3caee275, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).