component

DMT6013LSS-13

Public Made by Adom

by adom

Diodes Incorporated MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttriode-mos tube-transistordmt6013lss-13factory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
dmt6013lss-13 / README.md
History Download
Ray Publish 0.1.0 a81d414 15d ago

DMT6013LSS-13

Diodes Incorporated · MOSFETs · SOP-8

DMT6013LSS-13 from Diodes Incorporated, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source of the N-channel MOSFET, with body diode continuous forward current IS up to 10A.
2 S passive Source of the N-channel MOSFET, with body diode continuous forward current IS up to 10A.
3 S passive Source of the N-channel MOSFET, with body diode continuous forward current IS up to 10A.
4 G input Gate of the N-channel MOSFET, with gate-source voltage rated at ±20V and threshold VGS(TH) of 1V to 2.5V.
5 D passive Drain of the N-channel MOSFET, rated at VDSS 60V and 10A continuous at VGS = 10V, TA = +25°C.
6 D passive Drain of the N-channel MOSFET, rated at VDSS 60V and 10A continuous at VGS = 10V, TA = +25°C.
7 D passive Drain of the N-channel MOSFET, rated at VDSS 60V and 10A continuous at VGS = 10V, TA = +25°C.
8 D passive Drain of the N-channel MOSFET, rated at VDSS 60V and 10A continuous at VGS = 10V, TA = +25°C.

Key specifications

Parameter Value
Manufacturer Diodes Incorporated
Package SOP-8
Category Triode/MOS Tube/Transistor
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS 60 V TA = +25°C 2
Gate-Source Voltage VGSS -20 20 V ±20 V 2
Continuous Drain Current VGS=10V ID 10 A VGS = 10V, TA = +25°C (7.8 A at +70°C) 2
Continuous Drain Current VGS=4.5V ID 8.1 A VGS = 4.5V, TA = +25°C (6.5 A at +70°C) 2
Pulsed Drain Current IDM 60 A 10μs Pulse, Duty Cycle = 1% 2
Continuous Body Diode Forward Current IS 10 A 2
Pulsed Body Diode Forward Current ISM 60 A 10µs Pulse, Duty Cycle = 1% 2
Avalanche Current IAS 17.1 A L = 0.1mH 2
Avalanche Energy EAS 14.6 mJ L = 0.1mH 2
Total Power Dissipation (Note 5) PD 1.4 W Note 5, TA = +25°C 2
Thermal Resistance, Junction to Ambient (Note 5) RθJA 89.8 °C/W Note 5 2
Total Power Dissipation (Note 6) PD 2.1 W Note 6, TA = +25°C 2
Thermal Resistance, Junction to Ambient (Note 6) RθJA 60.4 °C/W Note 6 2
Thermal Resistance, Junction to Case (Note 6) RθJC 25.7 °C/W Note 6 2
Operating and Storage Temperature Range TJ, TSTG -55 150 °C 2
Drain-Source Breakdown Voltage BVDSS 60 V VGS = 0V, ID = 250µA 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS = 48V, VGS = 0V 2
Gate-Source Leakage IGSS -100 100 nA VGS = 20V, VDS = 0V 2
Gate Threshold Voltage VGS(TH) 1 2.5 V VDS = VGS, ID = 250µA 2
Static Drain-Source On-Resistance RDS(ON) 11.2 14.3 mΩ VGS = 10V, ID = 10A 2
Static Drain-Source On-Resistance RDS(ON) 16.1 21 mΩ VGS = 4.5V, ID = 6A 2
Diode Forward Voltage VSD 0.7 1.2 V VGS = 0V, IS = 1A 2
Input Capacitance Ciss 1081 pF VDS = 30V, VGS = 0V, f = 1MHz 2
Output Capacitance Coss 253 pF VDS = 30V, VGS = 0V, f = 1MHz 2
Reverse Transfer Capacitance Crss 22 pF VDS = 30V, VGS = 0V, f = 1MHz 2
Gate Resistance Rg 1.22 Ω VDS = 0V, VGS = 0V, f = 1MHz 2
Total Gate Charge (VGS = 4.5V) Qg 8.5 nC VDS = 30V, ID = 10A 2
Total Gate Charge (VGS = 10V) Qg 15 nC VDS = 30V, ID = 10A 2
Gate-Source Charge Qgs 2.2 nC VDS = 30V, ID = 10A 2
Gate-Drain Charge Qgd 4.4 nC VDS = 30V, ID = 10A 2
Turn-On Delay Time tD(ON) 4.3 ns VGS = 10V, VDS = 30V, RG = 6Ω, ID = 10A 2
Turn-On Rise Time tR 6.5 ns VGS = 10V, VDS = 30V, RG = 6Ω, ID = 10A 2
Turn-Off Delay Time tD(OFF) 15.8 ns VGS = 10V, VDS = 30V, RG = 6Ω, ID = 10A 2
Turn-Off Fall Time tF 6.1 ns VGS = 10V, VDS = 30V, RG = 6Ω, ID = 10A 2
Reverse Recovery Time tRR 19.7 ns IF = 10A, di/dt = 100A/µs 2
Reverse Recovery Charge QRR 9.5 nC IF = 10A, di/dt = 100A/µs 2

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
contacts Copper tin  Terminal Connections Indicator: See Diagram  Terminals: Finish  Matte Tin Annealed over Copper Leadframe. 1

CAD (KiCad official)

  • Symbol: DMT6013LSS-13
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: dmt6013lss-13-etched.step / dmt6013lss-13-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); dmt6013lss-13.step / dmt6013lss-13.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (7 pp, sha256 a40156b557ec4c96, retrieved 2026-10-23, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF