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DMT6013LSS-13

Diodes Incorporated · MOSFETs · SOP-8

DMT6013LSS-13 from Diodes Incorporated, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	S	passive	Source of the N-channel MOSFET, with body diode continuous forward current IS up to 10A.
2	S	passive	Source of the N-channel MOSFET, with body diode continuous forward current IS up to 10A.
3	S	passive	Source of the N-channel MOSFET, with body diode continuous forward current IS up to 10A.
4	G	input	Gate of the N-channel MOSFET, with gate-source voltage rated at ±20V and threshold VGS(TH) of 1V to 2.5V.
5	D	passive	Drain of the N-channel MOSFET, rated at VDSS 60V and 10A continuous at VGS = 10V, TA = +25°C.
6	D	passive	Drain of the N-channel MOSFET, rated at VDSS 60V and 10A continuous at VGS = 10V, TA = +25°C.
7	D	passive	Drain of the N-channel MOSFET, rated at VDSS 60V and 10A continuous at VGS = 10V, TA = +25°C.
8	D	passive	Drain of the N-channel MOSFET, rated at VDSS 60V and 10A continuous at VGS = 10V, TA = +25°C.

Key specifications

Parameter	Value
Manufacturer	Diodes Incorporated
Package	SOP-8
Category	Triode/MOS Tube/Transistor
Pins	8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
Drain-Source Voltage	VDSS			60	V	TA = +25°C	2
Gate-Source Voltage	VGSS	-20		20	V	±20 V	2
Continuous Drain Current VGS=10V	ID			10	A	VGS = 10V, TA = +25°C (7.8 A at +70°C)	2
Continuous Drain Current VGS=4.5V	ID			8.1	A	VGS = 4.5V, TA = +25°C (6.5 A at +70°C)	2
Pulsed Drain Current	IDM			60	A	10μs Pulse, Duty Cycle = 1%	2
Continuous Body Diode Forward Current	IS			10	A		2
Pulsed Body Diode Forward Current	ISM			60	A	10µs Pulse, Duty Cycle = 1%	2
Avalanche Current	IAS			17.1	A	L = 0.1mH	2
Avalanche Energy	EAS			14.6	mJ	L = 0.1mH	2
Total Power Dissipation (Note 5)	PD		1.4		W	Note 5, TA = +25°C	2
Thermal Resistance, Junction to Ambient (Note 5)	RθJA		89.8		°C/W	Note 5	2
Total Power Dissipation (Note 6)	PD		2.1		W	Note 6, TA = +25°C	2
Thermal Resistance, Junction to Ambient (Note 6)	RθJA		60.4		°C/W	Note 6	2
Thermal Resistance, Junction to Case (Note 6)	RθJC		25.7		°C/W	Note 6	2
Operating and Storage Temperature Range	TJ, TSTG	-55		150	°C		2
Drain-Source Breakdown Voltage	BVDSS	60			V	VGS = 0V, ID = 250µA	2
Zero Gate Voltage Drain Current	IDSS			1	µA	VDS = 48V, VGS = 0V	2
Gate-Source Leakage	IGSS	-100		100	nA	VGS = 20V, VDS = 0V	2
Gate Threshold Voltage	VGS(TH)	1		2.5	V	VDS = VGS, ID = 250µA	2
Static Drain-Source On-Resistance	RDS(ON)		11.2	14.3	mΩ	VGS = 10V, ID = 10A	2
Static Drain-Source On-Resistance	RDS(ON)		16.1	21	mΩ	VGS = 4.5V, ID = 6A	2
Diode Forward Voltage	VSD		0.7	1.2	V	VGS = 0V, IS = 1A	2
Input Capacitance	Ciss		1081		pF	VDS = 30V, VGS = 0V, f = 1MHz	2
Output Capacitance	Coss		253		pF	VDS = 30V, VGS = 0V, f = 1MHz	2
Reverse Transfer Capacitance	Crss		22		pF	VDS = 30V, VGS = 0V, f = 1MHz	2
Gate Resistance	Rg		1.22		Ω	VDS = 0V, VGS = 0V, f = 1MHz	2
Total Gate Charge (VGS = 4.5V)	Qg		8.5		nC	VDS = 30V, ID = 10A	2
Total Gate Charge (VGS = 10V)	Qg		15		nC	VDS = 30V, ID = 10A	2
Gate-Source Charge	Qgs		2.2		nC	VDS = 30V, ID = 10A	2
Gate-Drain Charge	Qgd		4.4		nC	VDS = 30V, ID = 10A	2
Turn-On Delay Time	tD(ON)		4.3		ns	VGS = 10V, VDS = 30V, RG = 6Ω, ID = 10A	2
Turn-On Rise Time	tR		6.5		ns	VGS = 10V, VDS = 30V, RG = 6Ω, ID = 10A	2
Turn-Off Delay Time	tD(OFF)		15.8		ns	VGS = 10V, VDS = 30V, RG = 6Ω, ID = 10A	2
Turn-Off Fall Time	tF		6.1		ns	VGS = 10V, VDS = 30V, RG = 6Ω, ID = 10A	2
Reverse Recovery Time	tRR		19.7		ns	IF = 10A, di/dt = 100A/µs	2
Reverse Recovery Charge	QRR		9.5		nC	IF = 10A, di/dt = 100A/µs	2

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part	Material	Colour / plating	Datasheet says	Page
contacts	Copper	tin	 Terminal Connections Indicator: See Diagram  Terminals: Finish  Matte Tin Annealed over Copper Leadframe.	1

CAD (KiCad official)

Symbol: DMT6013LSS-13
Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
3D model: SOP-8 (KiCad packages3D, STEP)
3D model files: dmt6013lss-13-etched.step / dmt6013lss-13-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); dmt6013lss-13.step / dmt6013lss-13.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: Diodes Incorporated datasheet (7 pp, sha256 a40156b557ec4c96, retrieved 2026-10-23, tier: manufacturer)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF