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DMT10H009LSS-13

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Diodes Incorporated MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttriode-mos tube-transistordmt10h009lss-13factory-2.0.0extractor-text

Verified DMT10H009LSS-13

by Ray · last 13 Nov 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

13 Nov 2026RayPublished by the parts factory: tier mfr, 8 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • •array (skip): not an array of element pairs
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: DMT10H009LSS-13 · SO-8 · 8 pins
  • ✓copper: 8 copper pads, none touching another net
  • ✓datasheet: all 8 pin names found in the 7-page datasheet
  • ✓distributor: lcsc C6601861, digikey 31-DMT10H009LSS-13TR-ND, mouser 621-DMT10H009LSS-13
  • ✓family: SOIC-8_3.9x4.9mm_P1.27mm
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-2aruupkd/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • ✓package_fit: height and body within the datasheet's package drawing (datasheet p.6)
  • ✓pads: 8 pins = 8 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 8 pins agree
  • ✓symbol_text: no pin names collide
  • ✓viewers: viewers/footprint.html 24 kB, viewers/symbol.html 10 kB
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ dmt10h009lss-13.kicad_sym✓ dmt10h009lss-13.kicad_mod✓ dmt10h009lss-13.step
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Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray
viewers dmt10h009lss-13: viewers rendered from the public page · Ray
dmt10h009lss-13-etched.glb dmt10h009lss-13: factory component page (tier=mfr) · Ray
dmt10h009lss-13-etched.step dmt10h009lss-13: factory component page (tier=mfr) · Ray
dmt10h009lss-13-hero.glb dmt10h009lss-13: hero GLB from the etched model (keeps the MPN mark) · Ray
dmt10h009lss-13-hero.overlay.json dmt10h009lss-13: hero GLB from the etched model (keeps the MPN mark) · Ray
dmt10h009lss-13.glb Publish 0.1.0 · Ray
dmt10h009lss-13.kicad_mod Publish 0.1.0 · Ray
dmt10h009lss-13.kicad_sym Publish 0.1.0 · Ray
dmt10h009lss-13.lbr Publish 0.1.0 · Ray
dmt10h009lss-13.step Publish 0.1.0 · Ray
package.json Publish 0.1.0 · Ray
page.json Set visibility: public · Ray
README.md Publish 0.1.0 · Ray
verification.json Verified: Published by the parts factory: tier mfr, 8 pins · Ray

DMT10H009LSS-13

Diodes Incorporated · MOSFETs · SO-8

DMT10H009LSS-13 from Diodes Incorporated, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model). Symbol and footprint from KiCad-official CAD; the 3D model is generated from the datasheet's package dimensions.

Pinout

Pin Name Type Function
1 S passive Source terminal of the 100V N-channel MOSFET, tied internally with pins 2 and 3.
2 S passive Source terminal of the 100V N-channel MOSFET, tied internally with pins 1 and 3.
3 S passive Source terminal of the 100V N-channel MOSFET, tied internally with pins 1 and 2.
4 G input Gate terminal, rated VGSS ±20V, with VGS(TH) of 1.3V to 2.5V at ID = 250µA.
5 D passive Drain terminal, VDSS 100V, tied internally with pins 6, 7 and 8.
6 D passive Drain terminal, VDSS 100V, tied internally with pins 5, 7 and 8.
7 D passive Drain terminal, VDSS 100V, tied internally with pins 5, 6 and 8.
8 D passive Drain terminal, VDSS 100V, tied internally with pins 5, 6 and 7.

Key specifications

Parameter Value
Manufacturer Diodes Incorporated
Package SO-8
Category Triode/MOS Tube/Transistor
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 100 V VGS = 0V, ID = 1mA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS = 80V, VGS = 0V 2
Gate-Source Leakage IGSS -100 100 nA VGS = ±20V, VDS = 0V 2
Gate Threshold Voltage VGS(TH) 1.3 2.5 V VDS = VGS, ID = 250μA 2
Static Drain-Source On-Resistance RDS(ON) 7.1 9 mΩ VGS = 10V, ID = 10A 2
Static Drain-Source On-Resistance RDS(ON) 9.7 13.8 mΩ VGS = 4.5V, ID = 6A 2
Diode Forward Voltage VSD 0.8 1.2 V VGS = 0V, IS = 20A 2
Drain-Source Voltage VDSS 100 V TA = +25°C 2
Gate-Source Voltage VGSS -20 20 V TA = +25°C 2
Continuous Drain Current ID 13 A VGS = 10V, TA = +25°C (Note 6) 2
Continuous Drain Current ID 10 A VGS = 10V, TA = +70°C (Note 6) 2
Continuous Drain Current ID 48 A VGS = 10V, TC = +25°C 2
Continuous Drain Current ID 38 A VGS = 10V, TC = +70°C 2
Pulsed Drain Current IDM 110 A 10µs Pulse, Duty Cycle = 1% 2
Maximum Continuous Body Diode Forward Current IS 2.5 A Note 6 2
Pulsed Body Diode Forward Current ISM 110 A 10µs Pulse, Duty Cycle = 1% 2
Avalanche Current IAS 21 A L = 0.3mH 2
Avalanche Energy EAS 66 mJ L = 0.3mH 2
Total Power Dissipation PD 1.8 W Note 5, TA = +25°C 2
Total Power Dissipation PD 2.5 W Note 6, TA = +25°C 2
Thermal Resistance, Junction to Ambient RϴJA 68 °C/W Note 5 2
Thermal Resistance, Junction to Ambient RϴJA 50 °C/W Note 6 2
Thermal Resistance, Junction to Case RϴJC 4 °C/W Note 6 2
Operating and Storage Temperature Range TJ, TSTG -55 150 °C 2
Input Capacitance Ciss 2309 pF VDS = 50V, VGS = 0V, f = 1MHz 2
Output Capacitance Coss 536 pF VDS = 50V, VGS = 0V, f = 1MHz 2
Reverse Transfer Capacitance Crss 13.7 pF VDS = 50V, VGS = 0V, f = 1MHz 2
Gate Resistance Rg 1.9 Ω VDS = 0V, VGS = 0V, f = 1MHz 2
Total Gate Charge (VGS = 10V) Qg 40.2 nC VDD = 50V, ID = 20A 2
Total Gate Charge (VGS = 4.5V) Qg 20.2 nC VDD = 50V, ID = 20A 2
Gate-Source Charge Qgs 7 nC VDD = 50V, ID = 20A 2
Gate-Drain Charge Qgd 8.5 nC VDD = 50V, ID = 20A 2
Turn-On Delay Time tD(ON) 5.4 ns VDD = 50V, VGS = 10V, ID = 20A, Rg = 3Ω 2
Turn-On Rise Time tR 10.6 ns VDD = 50V, VGS = 10V, ID = 20A, Rg = 3Ω 2
Turn-Off Delay Time tD(OFF) 28.3 ns VDD = 50V, VGS = 10V, ID = 20A, Rg = 3Ω 2
Turn-Off Fall Time tF 14.9 ns VDD = 50V, VGS = 10V, ID = 20A, Rg = 3Ω 2
Body Diode Reverse Recovery Time tRR 44.3 ns IF = 20A, di/dt = 100A/μs 2
Body Diode Reverse Recovery Charge QRR 65.5 nC IF = 20A, di/dt = 100A/μs 2

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
contacts Copper tin  Terminal Finish, Matte Tin Annealed over Copper Leadframe. 1

CAD (land: KiCad; 3D: generated from the datasheet)

  • Symbol: DMT10H009LSS-13
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SO-8, generated on the KiCad land (body 3.85 x 4.9 mm, terminals on the pads, 1.45 mm tall, datasheet A, nominal). KiCad's stock model for this land is taller than the datasheet allows, so the model is generated from the datasheet drawing; the dimensions come from the datasheet drawing where it was read and are defaults otherwise (see provenance.model_3d_generated), not the manufacturer's CAD (STEP)
  • 3D model files: dmt10h009lss-13-etched.step / dmt10h009lss-13-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); dmt10h009lss-13.step / dmt10h009lss-13.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (7 pp, sha256 de6ef5004fb1da8d, retrieved 2026-11-13, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: land: KiCad official libraries (CC-BY-SA 4.0); 3D: generated from the datasheet's package dimensions (provenance.model_3d_generated).

Datasheet PDF