DMT10H009LSS-13 from Diodes Incorporated, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model). Symbol and footprint from KiCad-official CAD; the 3D model is generated from the datasheet's package dimensions.

Pinout

Pin	Name	Type	Function
1	S	passive	Source terminal of the 100V N-channel MOSFET, tied internally with pins 2 and 3.
2	S	passive	Source terminal of the 100V N-channel MOSFET, tied internally with pins 1 and 3.
3	S	passive	Source terminal of the 100V N-channel MOSFET, tied internally with pins 1 and 2.
4	G	input	Gate terminal, rated VGSS ±20V, with VGS(TH) of 1.3V to 2.5V at ID = 250µA.
5	D	passive	Drain terminal, VDSS 100V, tied internally with pins 6, 7 and 8.
6	D	passive	Drain terminal, VDSS 100V, tied internally with pins 5, 7 and 8.
7	D	passive	Drain terminal, VDSS 100V, tied internally with pins 5, 6 and 8.
8	D	passive	Drain terminal, VDSS 100V, tied internally with pins 5, 6 and 7.

Key specifications

Parameter	Value
Manufacturer	Diodes Incorporated
Package	SO-8
Category	Triode/MOS Tube/Transistor
Pins	8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
Drain-Source Breakdown Voltage	BVDSS	100			V	VGS = 0V, ID = 1mA	2
Zero Gate Voltage Drain Current	IDSS			1	μA	VDS = 80V, VGS = 0V	2
Gate-Source Leakage	IGSS	-100		100	nA	VGS = ±20V, VDS = 0V	2
Gate Threshold Voltage	VGS(TH)	1.3		2.5	V	VDS = VGS, ID = 250μA	2
Static Drain-Source On-Resistance	RDS(ON)		7.1	9	mΩ	VGS = 10V, ID = 10A	2
Static Drain-Source On-Resistance	RDS(ON)		9.7	13.8	mΩ	VGS = 4.5V, ID = 6A	2
Diode Forward Voltage	VSD		0.8	1.2	V	VGS = 0V, IS = 20A	2
Drain-Source Voltage	VDSS			100	V	TA = +25°C	2
Gate-Source Voltage	VGSS	-20		20	V	TA = +25°C	2
Continuous Drain Current	ID			13	A	VGS = 10V, TA = +25°C (Note 6)	2
Continuous Drain Current	ID			10	A	VGS = 10V, TA = +70°C (Note 6)	2
Continuous Drain Current	ID			48	A	VGS = 10V, TC = +25°C	2
Continuous Drain Current	ID			38	A	VGS = 10V, TC = +70°C	2
Pulsed Drain Current	IDM			110	A	10µs Pulse, Duty Cycle = 1%	2
Maximum Continuous Body Diode Forward Current	IS			2.5	A	Note 6	2
Pulsed Body Diode Forward Current	ISM			110	A	10µs Pulse, Duty Cycle = 1%	2
Avalanche Current	IAS			21	A	L = 0.3mH	2
Avalanche Energy	EAS			66	mJ	L = 0.3mH	2
Total Power Dissipation	PD			1.8	W	Note 5, TA = +25°C	2
Total Power Dissipation	PD			2.5	W	Note 6, TA = +25°C	2
Thermal Resistance, Junction to Ambient	RϴJA		68		°C/W	Note 5	2
Thermal Resistance, Junction to Ambient	RϴJA		50		°C/W	Note 6	2
Thermal Resistance, Junction to Case	RϴJC		4		°C/W	Note 6	2
Operating and Storage Temperature Range	TJ, TSTG	-55		150	°C		2
Input Capacitance	Ciss		2309		pF	VDS = 50V, VGS = 0V, f = 1MHz	2
Output Capacitance	Coss		536		pF	VDS = 50V, VGS = 0V, f = 1MHz	2
Reverse Transfer Capacitance	Crss		13.7		pF	VDS = 50V, VGS = 0V, f = 1MHz	2
Gate Resistance	Rg		1.9		Ω	VDS = 0V, VGS = 0V, f = 1MHz	2
Total Gate Charge (VGS = 10V)	Qg		40.2		nC	VDD = 50V, ID = 20A	2
Total Gate Charge (VGS = 4.5V)	Qg		20.2		nC	VDD = 50V, ID = 20A	2
Gate-Source Charge	Qgs		7		nC	VDD = 50V, ID = 20A	2
Gate-Drain Charge	Qgd		8.5		nC	VDD = 50V, ID = 20A	2
Turn-On Delay Time	tD(ON)		5.4		ns	VDD = 50V, VGS = 10V, ID = 20A, Rg = 3Ω	2
Turn-On Rise Time	tR		10.6		ns	VDD = 50V, VGS = 10V, ID = 20A, Rg = 3Ω	2
Turn-Off Delay Time	tD(OFF)		28.3		ns	VDD = 50V, VGS = 10V, ID = 20A, Rg = 3Ω	2
Turn-Off Fall Time	tF		14.9		ns	VDD = 50V, VGS = 10V, ID = 20A, Rg = 3Ω	2
Body Diode Reverse Recovery Time	tRR		44.3		ns	IF = 20A, di/dt = 100A/μs	2
Body Diode Reverse Recovery Charge	QRR		65.5		nC	IF = 20A, di/dt = 100A/μs	2

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part	Material	Colour / plating	Datasheet says	Page
contacts	Copper	tin	 Terminal Finish, Matte Tin Annealed over Copper Leadframe.	1

CAD (land: KiCad; 3D: generated from the datasheet)

Symbol: DMT10H009LSS-13
Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
3D model: SO-8, generated on the KiCad land (body 3.85 x 4.9 mm, terminals on the pads, 1.45 mm tall, datasheet A, nominal). KiCad's stock model for this land is taller than the datasheet allows, so the model is generated from the datasheet drawing; the dimensions come from the datasheet drawing where it was read and are defaults otherwise (see provenance.model_3d_generated), not the manufacturer's CAD (STEP)
3D model files: dmt10h009lss-13-etched.step / dmt10h009lss-13-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); dmt10h009lss-13.step / dmt10h009lss-13.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: Diodes Incorporated datasheet (7 pp, sha256 de6ef5004fb1da8d, retrieved 2026-11-13, tier: manufacturer)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: land: KiCad official libraries (CC-BY-SA 4.0); 3D: generated from the datasheet's package dimensions (provenance.model_3d_generated).

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DMT10H009LSS-13

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