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DMS3015SSS-13

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Diodes Incorporated MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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DMS3015SSS-13

Diodes Incorporated · MOSFETs · SO-8

DMS3015SSS-13 from Diodes Incorporated, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source of the N-channel MOSFET (with integrated Schottky diode); tied internally to pins 2 and 3.
2 S passive Source of the N-channel MOSFET (with integrated Schottky diode); tied internally to pins 1 and 3.
3 S passive Source of the N-channel MOSFET (with integrated Schottky diode); tied internally to pins 1 and 2.
4 G input Gate of the N-channel MOSFET; VGSS rating is ±20 V and threshold VGS(TH) is 1.0 to 2.5 V.
5 D passive Drain of the N-channel MOSFET; VDSS rating is 30 V, tied internally to pins 6, 7 and 8.
6 D passive Drain of the N-channel MOSFET; VDSS rating is 30 V, tied internally to pins 5, 7 and 8.
7 D passive Drain of the N-channel MOSFET; VDSS rating is 30 V, tied internally to pins 5, 6 and 8.
8 D passive Drain of the N-channel MOSFET; VDSS rating is 30 V, tied internally to pins 5, 6 and 7.

Key specifications

Parameter Value
Manufacturer Diodes Incorporated
Package SO-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 30 V VGS = 0V, ID = 250A 2
Zero Gate Voltage Drain Current IDSS 0.1 mA VDS = 30V, VGS = 0V 2
Gate-Source Leakage IGSS -100 100 nA VGS = ±20V, VDS = 0V 2
Gate Threshold Voltage VGS(TH) 1 1.5 2.5 V VDS = VGS, ID = 250μA 2
Static Drain-Source On-Resistance RDS(ON) 8.5 11.9 mΩ VGS = 10V, ID = 11A 2
Static Drain-Source On-Resistance RDS(ON) 9.5 14.9 mΩ VGS = 4.5V, ID = 8.8A 2
Diode Forward Voltage VSD 0.45 1 V VGS = 0V, IS = 1A 2
Gate Resistance Rg 1.48 2.7 Ω VDS = 0V, VGS = 0V, f = 1MHz 2
Drain-Source Voltage VDSS 30 V 2
Gate-Source Voltage VGSS -20 20 V 2
Continuous Drain Current ID 11 A VGS = 10V, steady state, TA = +25°C 2
Continuous Drain Current ID 6.6 A VGS = 10V, steady state, TA = +85°C 2
Pulsed Drain Current IDM 80 A 2
Avalanche Current IAR 17 A 2
Repetitive Avalanche Energy EAR 43 mJ L = 0.3mH 2
Power Dissipation PD 1.55 W 2
Thermal Resistance, Junction to Ambient RθJA 81.3 °C/W TA = +25°C (Note 5) 2
Operating and Storage Temperature Range TJ, TSTG -55 150 °C 2

CAD (KiCad official)

  • Symbol: DMS3015SSS-13
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SO-8 (KiCad packages3D, STEP)
  • 3D model files: dms3015sss-13-etched.step / dms3015sss-13-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); dms3015sss-13.step / dms3015sss-13.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (7 pp, sha256 7f0c9a9a651e9736, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF