component
DMS3015SSS-13
Public Made by Adomby adom
Diodes Incorporated MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownDMS3015SSS-13
Diodes Incorporated · MOSFETs · SO-8
DMS3015SSS-13 from Diodes Incorporated, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the N-channel MOSFET (with integrated Schottky diode); tied internally to pins 2 and 3. |
| 2 | S | passive | Source of the N-channel MOSFET (with integrated Schottky diode); tied internally to pins 1 and 3. |
| 3 | S | passive | Source of the N-channel MOSFET (with integrated Schottky diode); tied internally to pins 1 and 2. |
| 4 | G | input | Gate of the N-channel MOSFET; VGSS rating is ±20 V and threshold VGS(TH) is 1.0 to 2.5 V. |
| 5 | D | passive | Drain of the N-channel MOSFET; VDSS rating is 30 V, tied internally to pins 6, 7 and 8. |
| 6 | D | passive | Drain of the N-channel MOSFET; VDSS rating is 30 V, tied internally to pins 5, 7 and 8. |
| 7 | D | passive | Drain of the N-channel MOSFET; VDSS rating is 30 V, tied internally to pins 5, 6 and 8. |
| 8 | D | passive | Drain of the N-channel MOSFET; VDSS rating is 30 V, tied internally to pins 5, 6 and 7. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | SO-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 30 | V | VGS = 0V, ID = 250A | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 0.1 | mA | VDS = 30V, VGS = 0V | 2 | ||
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VGS = ±20V, VDS = 0V | 2 | |
| Gate Threshold Voltage | VGS(TH) | 1 | 1.5 | 2.5 | V | VDS = VGS, ID = 250μA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | 8.5 | 11.9 | mΩ | VGS = 10V, ID = 11A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 9.5 | 14.9 | mΩ | VGS = 4.5V, ID = 8.8A | 2 | |
| Diode Forward Voltage | VSD | 0.45 | 1 | V | VGS = 0V, IS = 1A | 2 | |
| Gate Resistance | Rg | 1.48 | 2.7 | Ω | VDS = 0V, VGS = 0V, f = 1MHz | 2 | |
| Drain-Source Voltage | VDSS | 30 | V | 2 | |||
| Gate-Source Voltage | VGSS | -20 | 20 | V | 2 | ||
| Continuous Drain Current | ID | 11 | A | VGS = 10V, steady state, TA = +25°C | 2 | ||
| Continuous Drain Current | ID | 6.6 | A | VGS = 10V, steady state, TA = +85°C | 2 | ||
| Pulsed Drain Current | IDM | 80 | A | 2 | |||
| Avalanche Current | IAR | 17 | A | 2 | |||
| Repetitive Avalanche Energy | EAR | 43 | mJ | L = 0.3mH | 2 | ||
| Power Dissipation | PD | 1.55 | W | 2 | |||
| Thermal Resistance, Junction to Ambient | RθJA | 81.3 | °C/W | TA = +25°C (Note 5) | 2 | ||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 2 |
CAD (KiCad official)
- Symbol:
DMS3015SSS-13 - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files:
dms3015sss-13-etched.step/dms3015sss-13-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);dms3015sss-13.step/dms3015sss-13.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Diodes Incorporated datasheet (7 pp, sha256
7f0c9a9a651e9736, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).