component
DMP3037LSS-13
Public Made by Adomby adom
Diodes Incorporated MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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Publish 0.1.0
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DMP3037LSS-13
Diodes Incorporated · MOSFETs · SO-8
DMP3037LSS-13 from Diodes Incorporated, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model). Symbol and footprint from KiCad-official CAD; the 3D model is generated from the datasheet's package dimensions.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the P-channel MOSFET; the device is rated for a drain-source voltage of -30V and a gate-source voltage of ±20V. |
| 2 | S | passive | Source terminal of the P-channel MOSFET; the device is rated for a drain-source voltage of -30V and a gate-source voltage of ±20V. |
| 3 | S | passive | Source terminal of the P-channel MOSFET; the device is rated for a drain-source voltage of -30V and a gate-source voltage of ±20V. |
| 4 | G | input | Gate terminal of the P-channel MOSFET; the gate-source voltage is rated at ±20V. |
| 5 | D | passive | Drain terminal of the P-channel MOSFET; the device is rated for a drain-source voltage of -30V and a continuous drain current of -5.8A at TA = +25°C. |
| 6 | D | passive | Drain terminal of the P-channel MOSFET; the device is rated for a drain-source voltage of -30V and a continuous drain current of -5.8A at TA = +25°C. |
| 7 | D | passive | Drain terminal of the P-channel MOSFET; the device is rated for a drain-source voltage of -30V and a continuous drain current of -5.8A at TA = +25°C. |
| 8 | D | passive | Drain terminal of the P-channel MOSFET; the device is rated for a drain-source voltage of -30V and a continuous drain current of -5.8A at TA = +25°C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | SO-8 |
| Category | Transistors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | -30 | V | VGS = 0V, ID = -250μA | 3 | ||
| Zero Gate Voltage Drain Current (TJ = +25°C) | IDSS | -1 | μA | VDS = -30V, VGS = 0V | 3 | ||
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VGS = ±20V, VDS = 0V | 3 | |
| Gate Threshold Voltage | VGS(TH) | -1 | -2.4 | V | VDS = VGS, ID = -250μA | 3 | |
| Static Drain-Source On-Resistance | RDS(ON) | 19 | 32 | mΩ | VGS = -10V, ID = -7A | 3 | |
| Static Drain-Source On-Resistance | RDS(ON) | 28 | 50 | mΩ | VGS = -4.5V, ID = -5A | 3 | |
| Diode Forward Voltage | VSD | -0.75 | -1.2 | V | VGS = 0V, IS = -1A | 3 | |
| Drain-Source Voltage | VDSS | -30 | V | 2 | |||
| Gate-Source Voltage | VGSS | -20 | 20 | V | 2 | ||
| Continuous Drain Current (TA = +25°C) | ID | -5.8 | A | VGS = -10V, TA = +25°C (Note 6) | 2 | ||
| Continuous Drain Current (TA = +70°C) | ID | -4.6 | A | VGS = -10V, TA = +70°C (Note 6) | 2 | ||
| Pulsed Drain Current | IDM | -40 | A | 10µs Pulse, Duty cycle = 1% | 2 | ||
| Avalanche Current | IAS | -17 | A | L = 0.1mH (Note 7) | 2 | ||
| Avalanche Energy | EAS | 15 | mJ | L = 0.1mH (Note 7) | 2 | ||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 2 | ||
| Total Power Dissipation (TA = +25°C) | PD | 1.2 | W | TA = +25°C (Note 5) | 2 | ||
| Total Power Dissipation (TA = +70°C) | PD | 0.8 | W | TA = +70°C (Note 5) | 2 | ||
| Thermal Resistance, Junction to Ambient (steady state) | RθJA | 100 | °C/W | Steady state (Note 5) | 2 | ||
| Thermal Resistance, Junction to Ambient (t < 10s) | RθJA | 58 | °C/W | t < 10s (Note 5) | 2 | ||
| Total Power Dissipation (TA = +25°C) | PD | 1.6 | W | TA = +25°C (Note 6) | 2 | ||
| Total Power Dissipation (TA = +70°C) | PD | 1 | W | TA = +70°C (Note 6) | 2 | ||
| Thermal Resistance, Junction to Ambient (steady state) | RθJA | 77 | °C/W | Steady state (Note 6) | 2 | ||
| Thermal Resistance, Junction to Ambient (t < 10s) | RθJA | 45 | °C/W | t < 10s (Note 6) | 2 | ||
| Thermal Resistance, Junction to Case | RθJC | 10 | °C/W | (Note 6) | 2 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | Copper | tin | Terminals: Matte Tin Plated over Copper Leadframe. Solderable | 1 |
CAD (land: KiCad; 3D: generated from the datasheet)
- Symbol:
DMP3037LSS-13 - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SO-8, generated on the KiCad land (body 3.85 x 4.9 mm, terminals on the pads, 1.45 mm tall, datasheet A, nominal). KiCad's stock model for this land is taller than the datasheet allows, so the model is generated from the datasheet drawing; the dimensions come from the datasheet drawing where it was read and are defaults otherwise (see provenance.model_3d_generated), not the manufacturer's CAD (STEP)
- 3D model files:
dmp3037lss-13-etched.step/dmp3037lss-13-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);dmp3037lss-13.step/dmp3037lss-13.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Diodes Incorporated datasheet (8 pp, sha256
6e9acee3609b207e, retrieved 2026-11-13, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: land: KiCad official libraries (CC-BY-SA 4.0); 3D: generated from the datasheet's package dimensions (provenance.model_3d_generated).
# DMP3037LSS-13
**Diodes Incorporated** · MOSFETs · SO-8
DMP3037LSS-13 from Diodes Incorporated, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model). Symbol and footprint from KiCad-official CAD; the 3D model is generated from the datasheet's package dimensions.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the P-channel MOSFET; the device is rated for a drain-source voltage of -30V and a gate-source voltage of ±20V. |
| 2 | S | passive | Source terminal of the P-channel MOSFET; the device is rated for a drain-source voltage of -30V and a gate-source voltage of ±20V. |
| 3 | S | passive | Source terminal of the P-channel MOSFET; the device is rated for a drain-source voltage of -30V and a gate-source voltage of ±20V. |
| 4 | G | input | Gate terminal of the P-channel MOSFET; the gate-source voltage is rated at ±20V. |
| 5 | D | passive | Drain terminal of the P-channel MOSFET; the device is rated for a drain-source voltage of -30V and a continuous drain current of -5.8A at TA = +25°C. |
| 6 | D | passive | Drain terminal of the P-channel MOSFET; the device is rated for a drain-source voltage of -30V and a continuous drain current of -5.8A at TA = +25°C. |
| 7 | D | passive | Drain terminal of the P-channel MOSFET; the device is rated for a drain-source voltage of -30V and a continuous drain current of -5.8A at TA = +25°C. |
| 8 | D | passive | Drain terminal of the P-channel MOSFET; the device is rated for a drain-source voltage of -30V and a continuous drain current of -5.8A at TA = +25°C. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | SO-8 |
| Category | Transistors |
| Pins | 8 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | -30 | | | V | VGS = 0V, ID = -250μA | 3 |
| Zero Gate Voltage Drain Current (TJ = +25°C) | IDSS | | | -1 | μA | VDS = -30V, VGS = 0V | 3 |
| Gate-Source Leakage | IGSS | -100 | | 100 | nA | VGS = ±20V, VDS = 0V | 3 |
| Gate Threshold Voltage | VGS(TH) | -1 | | -2.4 | V | VDS = VGS, ID = -250μA | 3 |
| Static Drain-Source On-Resistance | RDS(ON) | | 19 | 32 | mΩ | VGS = -10V, ID = -7A | 3 |
| Static Drain-Source On-Resistance | RDS(ON) | | 28 | 50 | mΩ | VGS = -4.5V, ID = -5A | 3 |
| Diode Forward Voltage | VSD | | -0.75 | -1.2 | V | VGS = 0V, IS = -1A | 3 |
| Drain-Source Voltage | VDSS | -30 | | | V | | 2 |
| Gate-Source Voltage | VGSS | -20 | | 20 | V | | 2 |
| Continuous Drain Current (TA = +25°C) | ID | -5.8 | | | A | VGS = -10V, TA = +25°C (Note 6) | 2 |
| Continuous Drain Current (TA = +70°C) | ID | -4.6 | | | A | VGS = -10V, TA = +70°C (Note 6) | 2 |
| Pulsed Drain Current | IDM | -40 | | | A | 10µs Pulse, Duty cycle = 1% | 2 |
| Avalanche Current | IAS | -17 | | | A | L = 0.1mH (Note 7) | 2 |
| Avalanche Energy | EAS | | | 15 | mJ | L = 0.1mH (Note 7) | 2 |
| Operating and Storage Temperature Range | TJ, TSTG | -55 | | 150 | °C | | 2 |
| Total Power Dissipation (TA = +25°C) | PD | | | 1.2 | W | TA = +25°C (Note 5) | 2 |
| Total Power Dissipation (TA = +70°C) | PD | | | 0.8 | W | TA = +70°C (Note 5) | 2 |
| Thermal Resistance, Junction to Ambient (steady state) | RθJA | | | 100 | °C/W | Steady state (Note 5) | 2 |
| Thermal Resistance, Junction to Ambient (t < 10s) | RθJA | | | 58 | °C/W | t < 10s (Note 5) | 2 |
| Total Power Dissipation (TA = +25°C) | PD | | | 1.6 | W | TA = +25°C (Note 6) | 2 |
| Total Power Dissipation (TA = +70°C) | PD | | | 1 | W | TA = +70°C (Note 6) | 2 |
| Thermal Resistance, Junction to Ambient (steady state) | RθJA | | | 77 | °C/W | Steady state (Note 6) | 2 |
| Thermal Resistance, Junction to Ambient (t < 10s) | RθJA | | | 45 | °C/W | t < 10s (Note 6) | 2 |
| Thermal Resistance, Junction to Case | RθJC | | | 10 | °C/W | (Note 6) | 2 |
## Materials and finish
As the datasheet states them (page.json `metadata.appearance`; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | Copper | tin | Terminals: Matte Tin Plated over Copper Leadframe. Solderable | 1 |
## CAD (land: KiCad; 3D: generated from the datasheet)
- Symbol: `DMP3037LSS-13`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SO-8, generated on the KiCad land (body 3.85 x 4.9 mm, terminals on the pads, 1.45 mm tall, datasheet A, nominal). KiCad's stock model for this land is taller than the datasheet allows, so the model is generated from the datasheet drawing; the dimensions come from the datasheet drawing where it was read and are defaults otherwise (see provenance.model_3d_generated), not the manufacturer's CAD (STEP)
- 3D model files: `dmp3037lss-13-etched.step` / `dmp3037lss-13-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `dmp3037lss-13.step` / `dmp3037lss-13.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Diodes Incorporated datasheet](https://www.diodes.com/assets/Datasheets/DMP3037LSS-13.pdf) (8 pp, sha256 `6e9acee3609b207e`, retrieved 2026-11-13, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** land: KiCad official libraries (CC-BY-SA 4.0); 3D: generated from the datasheet's package dimensions (provenance.model_3d_generated).
[Datasheet PDF](docs/dmp3037lss-13-datasheet.pdf)