component

DMP3036SSS-13

Public Made by Adom

by adom

Diodes Incorporated MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsdmp3036sss-13factory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
Download ZIP Propose a change
Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 8d ago
viewers dmp3036sss-13: viewers · Ray 8d ago
dmp3036sss-13-etched.glb Publish 0.1.0 · Ray 8d ago
dmp3036sss-13-etched.step dmp3036sss-13: factory component page (tier=lcsc) · Ray 8d ago
dmp3036sss-13-hero.glb dmp3036sss-13: hero GLB from the etched model (keeps the MPN mark) · Ray 8d ago
dmp3036sss-13-hero.overlay.json Publish 0.1.0 · Ray 8d ago
dmp3036sss-13.glb Publish 0.1.0 · Ray 8d ago
dmp3036sss-13.kicad_mod Publish 0.1.0 · Ray 8d ago
dmp3036sss-13.kicad_sym Publish 0.1.0 · Ray 8d ago
dmp3036sss-13.lbr Publish 0.1.0 · Ray 8d ago
dmp3036sss-13.step Publish 0.1.0 · Ray 8d ago
package.json Publish 0.1.0 · Ray 8d ago
page.json Set visibility: public · Ray 8d ago
README.md Publish 0.1.0 · Ray 8d ago

DMP3036SSS-13

Diodes Incorporated · MOSFETs · SO-8

DMP3036SSS-13 from Diodes Incorporated, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source of the P-channel MOSFET; pins 1-3 are source, with the body diode anode on the source side and drain-source rating of -30V.
2 S passive Source of the P-channel MOSFET, connected in parallel with pins 1 and 3.
3 S passive Source of the P-channel MOSFET, connected in parallel with pins 1 and 2.
4 G input Gate of the P-channel MOSFET with gate-source voltage rating of ±25V and threshold of -1.0V to -3.0V.
5 D passive Drain of the P-channel MOSFET, with continuous current of -19.5A at TC = +25°C (VGS = -10V) and drain-source voltage of -30V.
6 D passive Drain of the P-channel MOSFET, connected in parallel with pins 5, 7 and 8.
7 D passive Drain of the P-channel MOSFET, connected in parallel with pins 5, 6 and 8.
8 D passive Drain of the P-channel MOSFET, connected in parallel with pins 5, 6 and 7.

Key specifications

Parameter Value
Manufacturer Diodes Incorporated
Package SO-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS -30 V VGS = 0V, ID = -1mA 2
Zero Gate Voltage Drain Current, TJ = +25°C IDSS -1 μA VDS = -30V, VGS = 0V 2
Gate-Source Leakage IGSS -100 100 nA VGS = ±25V, VDS = 0V 2
Gate Threshold Voltage VGS(th) -1 -1.7 -3 V VDS = VGS, ID = -250μA 2
Static Drain-Source On-Resistance RDS(ON) 16 20 mΩ VGS = -10V, ID = -9A 2
Static Drain-Source On-Resistance RDS(ON) 22 29 mΩ VGS = -5V, ID = -7A 2
Diode Forward Voltage VSD -0.7 -1 V VGS = 0V, IS = -1A 2
Drain-Source Voltage VDSS -30 V 2
Gate-Source Voltage VGSS -25 25 V 2
Continuous Drain Current (Note 5) ID -19.5 A VGS = -10V, TC = +25°C 2
Continuous Drain Current (Note 5) ID -15.6 A VGS = -10V, TC = +70°C 2
Continuous Drain Current (Note 5) ID -11.4 A TA = +25°C 2
Continuous Drain Current (Note 5) ID -9.2 A TA = +70°C 2
Pulsed Drain Current IDM -80 A 10μs Pulse, Duty Cycle = 1% 2
Maximum Continuous Body Diode Forward Current (Note 6) IS -3.6 A 2
Avalanche Current (Note 7) IAS -17.5 A L = 0.3mH 2
Avalanche Energy (Note 7) EAS 64 mJ L = 0.3mH 2
Total Power Dissipation (Note 5) PD 1.4 W TA = +25°C 2
Total Power Dissipation (Note 5) PD 0.9 W TA = +70°C 2
Total Power Dissipation (Note 6) PD 1.9 W TA = +25°C 2
Total Power Dissipation (Note 6) PD 1.2 W TA = +70°C 2
Thermal Resistance, Junction to Ambient (Note 5), Steady State RϴJA 88 °C/W Steady state, Note 5 2
Thermal Resistance, Junction to Ambient (Note 5), t<10s RϴJA 37 °C/W t<10s, Note 5 2
Thermal Resistance, Junction to Ambient (Note 6), Steady State RϴJA 65 °C/W Steady state, Note 6 2
Thermal Resistance, Junction to Ambient (Note 6), t<10s RϴJA 32 °C/W t<10s, Note 6 2
Thermal Resistance, Junction to Case (Note 6) RϴJC 11 °C/W Note 6 2
Operating and Storage Temperature Range TJ, TSTG -55 150 °C 2

CAD (KiCad official)

  • Symbol: DMP3036SSS-13
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SO-8 (KiCad packages3D, STEP)
  • 3D model files: dmp3036sss-13-etched.step / dmp3036sss-13-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); dmp3036sss-13.step / dmp3036sss-13.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (7 pp, sha256 450081aabe1958e8, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF