component
DMP3036SSS-13
Public Made by Adomby adom
Diodes Incorporated MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownDMP3036SSS-13
Diodes Incorporated · MOSFETs · SO-8
DMP3036SSS-13 from Diodes Incorporated, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the P-channel MOSFET; pins 1-3 are source, with the body diode anode on the source side and drain-source rating of -30V. |
| 2 | S | passive | Source of the P-channel MOSFET, connected in parallel with pins 1 and 3. |
| 3 | S | passive | Source of the P-channel MOSFET, connected in parallel with pins 1 and 2. |
| 4 | G | input | Gate of the P-channel MOSFET with gate-source voltage rating of ±25V and threshold of -1.0V to -3.0V. |
| 5 | D | passive | Drain of the P-channel MOSFET, with continuous current of -19.5A at TC = +25°C (VGS = -10V) and drain-source voltage of -30V. |
| 6 | D | passive | Drain of the P-channel MOSFET, connected in parallel with pins 5, 7 and 8. |
| 7 | D | passive | Drain of the P-channel MOSFET, connected in parallel with pins 5, 6 and 8. |
| 8 | D | passive | Drain of the P-channel MOSFET, connected in parallel with pins 5, 6 and 7. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | SO-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | -30 | V | VGS = 0V, ID = -1mA | 2 | ||
| Zero Gate Voltage Drain Current, TJ = +25°C | IDSS | -1 | μA | VDS = -30V, VGS = 0V | 2 | ||
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VGS = ±25V, VDS = 0V | 2 | |
| Gate Threshold Voltage | VGS(th) | -1 | -1.7 | -3 | V | VDS = VGS, ID = -250μA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | 16 | 20 | mΩ | VGS = -10V, ID = -9A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 22 | 29 | mΩ | VGS = -5V, ID = -7A | 2 | |
| Diode Forward Voltage | VSD | -0.7 | -1 | V | VGS = 0V, IS = -1A | 2 | |
| Drain-Source Voltage | VDSS | -30 | V | 2 | |||
| Gate-Source Voltage | VGSS | -25 | 25 | V | 2 | ||
| Continuous Drain Current (Note 5) | ID | -19.5 | A | VGS = -10V, TC = +25°C | 2 | ||
| Continuous Drain Current (Note 5) | ID | -15.6 | A | VGS = -10V, TC = +70°C | 2 | ||
| Continuous Drain Current (Note 5) | ID | -11.4 | A | TA = +25°C | 2 | ||
| Continuous Drain Current (Note 5) | ID | -9.2 | A | TA = +70°C | 2 | ||
| Pulsed Drain Current | IDM | -80 | A | 10μs Pulse, Duty Cycle = 1% | 2 | ||
| Maximum Continuous Body Diode Forward Current (Note 6) | IS | -3.6 | A | 2 | |||
| Avalanche Current (Note 7) | IAS | -17.5 | A | L = 0.3mH | 2 | ||
| Avalanche Energy (Note 7) | EAS | 64 | mJ | L = 0.3mH | 2 | ||
| Total Power Dissipation (Note 5) | PD | 1.4 | W | TA = +25°C | 2 | ||
| Total Power Dissipation (Note 5) | PD | 0.9 | W | TA = +70°C | 2 | ||
| Total Power Dissipation (Note 6) | PD | 1.9 | W | TA = +25°C | 2 | ||
| Total Power Dissipation (Note 6) | PD | 1.2 | W | TA = +70°C | 2 | ||
| Thermal Resistance, Junction to Ambient (Note 5), Steady State | RϴJA | 88 | °C/W | Steady state, Note 5 | 2 | ||
| Thermal Resistance, Junction to Ambient (Note 5), t<10s | RϴJA | 37 | °C/W | t<10s, Note 5 | 2 | ||
| Thermal Resistance, Junction to Ambient (Note 6), Steady State | RϴJA | 65 | °C/W | Steady state, Note 6 | 2 | ||
| Thermal Resistance, Junction to Ambient (Note 6), t<10s | RϴJA | 32 | °C/W | t<10s, Note 6 | 2 | ||
| Thermal Resistance, Junction to Case (Note 6) | RϴJC | 11 | °C/W | Note 6 | 2 | ||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 2 |
CAD (KiCad official)
- Symbol:
DMP3036SSS-13 - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files:
dmp3036sss-13-etched.step/dmp3036sss-13-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);dmp3036sss-13.step/dmp3036sss-13.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Diodes Incorporated datasheet (7 pp, sha256
450081aabe1958e8, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).