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DMP2035UVT-7

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Diodes Incorporated MOSFETs, TSOT-26. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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README.md dmp2035uvt-7: specified limits as data (metadata.characteristics, 39 rows from the datasheet) · Ray 17d ago

DMP2035UVT-7

Diodes Incorporated · MOSFETs · TSOT-26

DMP2035UVT-7 from Diodes Incorporated, in a TSOT-26. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 D passive Drain terminal of the -20V P-channel MOSFET, rated for continuous drain current of -6.0A at TA = +25°C (steady state, VGS = -4.5V).
2 D passive Drain terminal of the -20V P-channel MOSFET, rated for continuous drain current of -6.0A at TA = +25°C (steady state, VGS = -4.5V).
3 G input Gate terminal; gate-source voltage is rated VGSS ±12V and an internal gate protection diode provides ESD protection up to 3kV.
4 S passive Source terminal of the MOSFET; maximum continuous body diode forward current IS is -2.0A.
5 D passive Drain terminal of the -20V P-channel MOSFET, rated for continuous drain current of -6.0A at TA = +25°C (steady state, VGS = -4.5V).
6 D passive Drain terminal of the -20V P-channel MOSFET, rated for continuous drain current of -6.0A at TA = +25°C (steady state, VGS = -4.5V).

Key specifications

Parameter Value
Manufacturer Diodes Incorporated
Package TSOT-26
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS -20 V 2
Gate-Source Voltage VGSS -12 12 V 2
Continuous Drain Current, steady state ID -6 A VGS=-4.5V, TA=+25°C 2
Continuous Drain Current, steady state ID -4.8 A VGS=-4.5V, TA=+70°C 2
Continuous Drain Current, t<10s ID -7.2 A VGS=-4.5V, TA=+25°C 2
Continuous Drain Current, t<10s ID -5.7 A VGS=-4.5V, TA=+70°C 2
Continuous Drain Current, steady state ID -5.2 A VGS=-2.5V, TA=+25°C 2
Continuous Drain Current, steady state ID -4.1 A VGS=-2.5V, TA=+70°C 2
Continuous Drain Current, t<10s ID -6.2 A VGS=-2.5V, TA=+25°C 2
Continuous Drain Current, t<10s ID -4.9 A VGS=-2.5V, TA=+70°C 2
Maximum Continuous Body Diode Forward Current IS -2 A Note 6 2
Pulsed Drain Current IDM -24 A 10µs pulse, duty cycle = 1% 2
Total Power Dissipation PD 1.2 W Note 5 (FR-4, minimum recommended pad layout) 2
Total Power Dissipation PD 2 W Note 6 (FR-4, 1 inch square copper plate) 2
Thermal Resistance, Junction to Ambient, steady state RθJA 106 °C/W Note 5 2
Thermal Resistance, Junction to Ambient, t<10s RθJA 74 °C/W Note 5 2
Thermal Resistance, Junction to Ambient, steady state RθJA 65 °C/W Note 6 2
Thermal Resistance, Junction to Ambient, t<10s RθJA 46 °C/W Note 6 2
Thermal Resistance, Junction to Case, steady state RθJC 11.8 °C/W Note 6 2
Operating and Storage Temperature Range TJ, TSTG -55 150 °C 2
Drain-Source Breakdown Voltage BVDSS -20 V VGS = 0V, ID = -250µA 2
Zero Gate Voltage Drain Current IDSS -1 µA VDS = -20V, VGS = 0V 2
Gate-Source Leakage IGSS 10 µA VGS = 8V, VDS = 0V 2
Gate Threshold Voltage VGS(TH) -0.4 -0.7 -1.5 V VDS = VGS, ID = -250µA 2
Static Drain-Source On-Resistance RDS(ON) 23 35 mΩ VGS = -4.5V, ID = -4.0A 2
Static Drain-Source On-Resistance RDS(ON) 30 45 mΩ VGS = -2.5V, ID = -4.0A 2
Static Drain-Source On-Resistance RDS(ON) 41 62 mΩ VGS = -1.8V, ID = -2.0A 2
Diode Forward Voltage VSD -0.7 -1 V VGS = 0V, IS = -1A 2
Input Capacitance Ciss 1610 2400 pF VDS = -10V, VGS = 0V, f = 1.0MHz 2
Output Capacitance Coss 157 210 pF VDS = -10V, VGS = 0V, f = 1.0MHz 2
Reverse Transfer Capacitance Crss 145 200 pF VDS = -10V, VGS = 0V, f = 1.0MHz 2
Gate Resistance RG 9.4 14.1 Ω VDS = 0V, VGS = 0V, f = 1.0MHz 2
Total Gate Charge Qg 15.4 23.1 nC VDS = -10V, VGS = -4.5V, ID = -4A 2
Turn-On Delay Time tD(ON) 17 33 ns VGS = -4.5V, VDS = -10V, RG = 6Ω, ID = -1A, RL = 10Ω 2
Turn-On Rise Time tR 12 19 ns VGS = -4.5V, VDS = -10V, RG = 6Ω, ID = -1A, RL = 10Ω 2
Turn-Off Delay Time tD(OFF) 94 150 ns VGS = -4.5V, VDS = -10V, RG = 6Ω, ID = -1A, RL = 10Ω 2
Turn-Off Fall Time tF 42 64 ns VGS = -4.5V, VDS = -10V, RG = 6Ω, ID = -1A, RL = 10Ω 2
Reverse Recovery Time tRR 14 25 ns IF = -4.5A, di/dt = 100A/µs 2
Reverse Recovery Charge QRR 4 8 nC IF = -4.5A, di/dt = 100A/µs 2

CAD (KiCad official)

  • Symbol: DMP2035UVT-7
  • Footprint: Package_TO_SOT_SMD:TSOT-23-6
  • 3D model: TSOT-26 (KiCad packages3D, STEP)
  • 3D model files: dmp2035uvt-7-etched.step / dmp2035uvt-7-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); dmp2035uvt-7.step / dmp2035uvt-7.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (6 pp, sha256 6a4eab87d0444b30, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF