# DMP2022LSSQ-13

**Diodes Incorporated** · MOSFETs · SO-8

DMP2022LSSQ-13 from Diodes Incorporated, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the P-channel MOSFET, with drain-source voltage rating of -20V. |
| 2 | S | passive | Source terminal of the P-channel MOSFET, tied in parallel with the other source pins for current sharing. |
| 3 | S | passive | Source terminal of the P-channel MOSFET, tied in parallel with the other source pins for current sharing. |
| 4 | G | input | Gate terminal with a gate-source voltage limit of ±12V and threshold of -0.6V to -1.1V. |
| 5 | D | passive | Drain terminal of the P-channel MOSFET, rated for -9.3A continuous at TA = +25°C. |
| 6 | D | passive | Drain terminal of the P-channel MOSFET, tied in parallel with the other drain pins; pulsed drain current up to -35A. |
| 7 | D | passive | Drain terminal of the P-channel MOSFET, tied in parallel with the other drain pins. |
| 8 | D | passive | Drain terminal of the P-channel MOSFET, tied in parallel with the other drain pins. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | SO-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | -20 |  |  | V | VGS = 0V, ID = -250µA | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | -1 | µA | VDS = -20V, VGS = 0V | 2 |
| Gate-Source Leakage | IGSS |  |  | 100 | nA | VGS = 12V, VDS = 0V | 2 |
| Gate Threshold Voltage | VGS(TH) | -0.6 | -0.77 | -1.1 | V | VDS = VGS, ID = -250µA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 8 | 13 | mΩ | VGS = -10V, ID = -10A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 11 | 16 | mΩ | VGS = -4.5V, ID = -9A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 17 | 22 | mΩ | VGS = -2.5V, ID = -8A | 2 |
| Diode Forward Voltage | VSD | -0.5 | -0.68 | -1.2 | V | VGS = 0V, IS = -3A | 2 |
| Turn-On Delay Time | tD(ON) |  | 4.5 | 15 | ns | VDD = -15V, ID = -1A, VGS = -10V, RGEN = 6Ω | 2 |
| Turn-On Rise Time | tR |  | 3.3 | 20 | ns | VDD = -15V, ID = -1A, VGS = -10V, RGEN = 6Ω | 2 |
| Turn-Off Delay Time | tD(OFF) |  | 197 | 216 | ns | VDD = -15V, ID = -1A, VGS = -10V, RGEN = 6Ω | 2 |
| Turn-Off Fall Time | tF |  | 60.5 | 153 | ns | VDD = -15V, ID = -1A, VGS = -10V, RGEN = 6Ω | 2 |
| Drain-Source Voltage | VDSS |  |  | -20 | V | TA = +25°C | 2 |
| Gate-Source Voltage | VGSS | -12 |  | 12 | V | TA = +25°C | 2 |
| Drain Current, Steady State | ID |  |  | -9.3 | A | TA = +25°C, Note 6 | 2 |
| Drain Current, Steady State | ID |  |  | -7.4 | A | TA = +70°C, Note 6 | 2 |
| Pulsed Drain Current | IDM |  |  | -35 | A | Pulse width 10µS, Duty Cycle 1% | 2 |
| Avalanche Current | IAS |  |  | -18 | A | L = 0.3mH | 2 |
| Avalanche Energy | EAS |  |  | 48.6 | mJ | L = 0.3mH | 2 |
| Total Power Dissipation | PD |  |  | 1.6 | W | Note 6 | 2 |
| Thermal Resistance, Junction to Ambient | RθJA |  | 74 |  | °C/W |  | 2 |
| Operating and Storage Temperature Range | TJ, TSTG | -55 |  | 150 | °C |  | 2 |
| Forward Transconductance | gfs |  | 28 |  | S | VDS = -10V, ID = -10A | 2 |
| Input Capacitance | Ciss |  | 2575 |  | pF | VDS = -10V, VGS = 0V, f = 1MHz | 2 |
| Output Capacitance | Coss |  | 326 |  | pF | VDS = -10V, VGS = 0V, f = 1MHz | 2 |
| Reverse Transfer Capacitance | Crss |  | 261 |  | pF | VDS = -10V, VGS = 0V, f = 1MHz | 2 |
| Gate Resistance | RG |  | 10.9 |  | Ω | VGS = 0V, VDS = 0V, f = 1MHz | 2 |
| Total Gate Charge | Qg |  | 28.1 |  | nC | VDS = -10V, VGS = -4.5V, ID = -10A | 2 |
| Total Gate Charge | Qg |  | 60.2 |  | nC | VDS = -10V, VGS = -10V, ID = -10A | 2 |
| Gate-Source Charge | Qgs |  | 5.9 |  | nC | VDS = -10V, VGS = -10V, ID = -10A | 2 |
| Gate-Drain Charge | Qgd |  | 7.4 |  | nC | VDS = -10V, VGS = -10V, ID = -10A | 2 |

## Materials and finish

As the datasheet states them (page.json `metadata.appearance`; the 3D model's colours follow it).

| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | Copper | tin |  Terminals Connections: See Diagram  Terminals: Finish - Matte Tin Annealed over Copper Lead | 1 |

## CAD (KiCad official)

- Symbol: `DMP2022LSSQ-13`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files: `dmp2022lssq-13-etched.step` / `dmp2022lssq-13-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `dmp2022lssq-13.step` / `dmp2022lssq-13.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Diodes Incorporated datasheet](https://www.diodes.com/assets/Datasheets/DMP2022LSSQ-13.pdf) (7 pp, sha256 `07fdec405ccc4829`, retrieved 2026-10-22, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/dmp2022lssq-13-datasheet.pdf)