main
Ray Set visibility: public 2922392 9d ago
{
  "schema_version": 1,
  "type": "component",
  "slug": "dmn6070ssd-hxy",
  "title": "DMN6070SSD-HXY",
  "brief": "HXY MOSFET MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
  "version": "0.1.0",
  "license": "CC-BY-SA-4.0",
  "tags": [
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    "triode-mos tube-transistor",
    "dmn6070ssd-hxy",
    "factory-2.0.0",
    "extractor-text"
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  "component": {
    "mpn": "DMN6070SSD-HXY",
    "manufacturer": "HXY MOSFET",
    "package": "SOP-8",
    "pin_count": 8,
    "category": "Triode/MOS Tube/Transistor",
    "subcategory": "MOSFETs",
    "datasheet": "https://datasheet.lcsc.com/datasheet/pdf/6a1907f9307007a1fe7851f60fc65aa3.pdf",
    "parts": {
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      "lbr": "dmn6070ssd-hxy.lbr"
    },
    "distributor_links": {
      "lcsc": "C22366500"
    },
    "distributor_check": {
      "checked_at": "2026-10-29T03:09:44Z",
      "source": "Component Ocean /api/assign-pns",
      "digikey": {
        "pn": null,
        "status": "no match"
      },
      "mouser": {
        "pn": null,
        "status": "no match"
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    },
    "pins": [
      {
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        "name": "S1",
        "type": "passive",
        "description": "Source terminal of MOSFET channel 1; the device absolute maximum ratings are VDS 60 V and VGS ±20 V."
      },
      {
        "number": "2",
        "name": "G1",
        "type": "input",
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      },
      {
        "number": "3",
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        "description": "Source terminal of MOSFET channel 2; the device absolute maximum ratings are VDS 60 V and VGS ±20 V."
      },
      {
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        "description": "Gate terminal of MOSFET channel 2; the absolute maximum gate-source voltage is ±20 V and RDS(ON) is specified at VGS = 4.5 V and 10 V."
      },
      {
        "number": "5",
        "name": "D2",
        "type": "passive",
        "description": "Drain terminal of MOSFET channel 2; the device is rated for VDS 60 V and continuous drain current ID 5 A at TA = 25 °C."
      },
      {
        "number": "6",
        "name": "D2",
        "type": "passive",
        "description": "Drain terminal of MOSFET channel 2 (second drain pin, internally tied to pin 5); the device is rated for VDS 60 V and continuous drain current ID 5 A at TA = 25 °C."
      },
      {
        "number": "7",
        "name": "D1",
        "type": "passive",
        "description": "Drain terminal of MOSFET channel 1 (second drain pin, internally tied to pin 8); the device is rated for VDS 60 V and continuous drain current ID 5 A at TA = 25 °C."
      },
      {
        "number": "8",
        "name": "D1",
        "type": "passive",
        "description": "Drain terminal of MOSFET channel 1; the device is rated for VDS 60 V and continuous drain current ID 5 A at TA = 25 °C."
      }
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    "provenance": {
      "extractor": "extract_pins 0.3",
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        "extractor": "extract_pins 0.3",
        "primary_model": "claude-haiku-5-5",
        "primary_mode": "text",
        "consensus_model": "claude-sonnet-5-5",
        "consensus": "agreed",
        "guards": "pin_guards 0.1: passed",
        "guard_notes": [
          "extractor flagged: The MPN in the request is DMN6070SSD-HXY, but the datasheet only lists DMN6070SSD (ordering info: DM; The pin-number mapping was derived from the package diagram in the extracted text (top row pins 1-4 ; The datasheet gives no per-pin electrical limits. Pin descriptions use the device-level absolute max"
        ],
        "pages_sent": 6,
        "cost_usd": 0.0326,
        "at": "2026-10-29T03:09:28"
      },
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        "pages": 6,
        "sha256": "0aa79f111e9fbbeb",
        "source_tier": "lcsc"
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      "cad": "KiCad official (CC-BY-SA 4.0)",
      "pins": {
        "total": 8,
        "described": 8,
        "cites_pages": true,
        "refuses_to_fabricate": true
      }
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    "viewers": {
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        "extents_mm": [
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        "zmin_mm": 0,
        "centre_offset_mm": 0,
        "footprint_binding": "identity",
        "sha256": "07f46cff378d30e6c27dfd5a03092c795323f86d91c71fc7e743f4f418dc553a",
        "checked": "2026-10-29",
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    "package_dims": {
      "package_code": "SOP-8",
      "source_page": 5,
      "D": {
        "nom_mm": 4.9,
        "range_mm": [
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      "E1": {
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      "E": {
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      "e": {
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        "range_mm": [
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      "A": {
        "nom_mm": 1.55,
        "range_mm": [
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      },
      "source": "datasheet package drawing, every number found on its page (extract_pins --task dims)",
      "model_check": {
        "file": "dmn6070ssd-hxy.step",
        "verdict": "PASS",
        "reasons": [
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    }
  },
  "metadata": {
    "specs": {
      "Manufacturer": "HXY MOSFET",
      "Package": "SOP-8",
      "Category": "Triode/MOS Tube/Transistor",
      "Pins": "8"
    },
    "characteristics": {
      "version": 1,
      "source": "datasheet",
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      "rows": [
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          "conditions": "VGS @ 4.5V, TA=100℃",
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          "name": "Pulsed Drain Current",
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          "name": "Total Power Dissipation",
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          "source_page": 1,
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        {
          "name": "Storage Temperature Range",
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          "kind": "absolute_maximum",
          "unit": "℃",
          "min": -55,
          "typ": null,
          "max": 150,
          "conditions": "",
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        },
        {
          "name": "Operating Junction Temperature Range",
          "symbol": "TJ",
          "kind": "absolute_maximum",
          "unit": "℃",
          "min": -55,
          "typ": null,
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          "source_page": 1,
          "source": "datasheet"
        },
        {
          "name": "Maximum Thermal Resistance, Junction-ambient",
          "symbol": "Rthj-a",
          "kind": "thermal",
          "unit": "℃/W",
          "min": null,
          "typ": null,
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        },
        {
          "name": "Drain-Source Breakdown Voltage",
          "symbol": "BVDSS",
          "kind": "electrical",
          "unit": "V",
          "min": 60,
          "typ": null,
          "max": null,
          "conditions": "VGS=0V, ID=250μA",
          "source_page": 2,
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        {
          "name": "Zero Gate Voltage Drain Current",
          "symbol": "IDSS",
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          "unit": "μA",
          "min": null,
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          "max": 1,
          "conditions": "VGS=0V, VDS=60V",
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        {
          "name": "Gate-Source Leakage Current",
          "symbol": "IGSS",
          "kind": "electrical",
          "unit": "nA",
          "min": -100,
          "typ": null,
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          "conditions": "VGS=±20V, VDS=0A",
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        {
          "name": "Gate-Source Threshold Voltage",
          "symbol": "VGS(th)",
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          "min": 1.5,
          "typ": 1.57,
          "max": 2.5,
          "conditions": "VGS=VDS, ID=250μA",
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        {
          "name": "Drain-Source On Resistance",
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          "min": null,
          "typ": 25,
          "max": 33,
          "conditions": "VGS=10V, ID=4A",
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        },
        {
          "name": "Drain-Source On Resistance",
          "symbol": "RDS(ON)",
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          "unit": "mΩ",
          "min": null,
          "typ": 33,
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          "conditions": "VGS=4.5V, ID=3A",
          "source_page": 2,
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          "name": "Diode Forward Voltage",
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          "conditions": "VGS=0V, ISD=1A",
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          "name": "Continuous Drain Current",
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