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Contents

README

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DMN6070SSD-HXY

HXY MOSFET · MOSFETs · SOP-8

DMN6070SSD-HXY from HXY MOSFET, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source terminal of MOSFET channel 1; the device absolute maximum ratings are VDS 60 V and VGS ±20 V.
2 G1 input Gate terminal of MOSFET channel 1; the absolute maximum gate-source voltage is ±20 V and RDS(ON) is specified at VGS = 4.5 V and 10 V.
3 S2 passive Source terminal of MOSFET channel 2; the device absolute maximum ratings are VDS 60 V and VGS ±20 V.
4 G2 input Gate terminal of MOSFET channel 2; the absolute maximum gate-source voltage is ±20 V and RDS(ON) is specified at VGS = 4.5 V and 10 V.
5 D2 passive Drain terminal of MOSFET channel 2; the device is rated for VDS 60 V and continuous drain current ID 5 A at TA = 25 °C.
6 D2 passive Drain terminal of MOSFET channel 2 (second drain pin, internally tied to pin 5); the device is rated for VDS 60 V and continuous drain current ID 5 A at TA = 25 °C.
7 D1 passive Drain terminal of MOSFET channel 1 (second drain pin, internally tied to pin 8); the device is rated for VDS 60 V and continuous drain current ID 5 A at TA = 25 °C.
8 D1 passive Drain terminal of MOSFET channel 1; the device is rated for VDS 60 V and continuous drain current ID 5 A at TA = 25 °C.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package SOP-8
Category Triode/MOS Tube/Transistor
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 60 V 1
Gate-Source Voltage VGS 20 V 1
Drain Current ID@TA=25℃ 5 A VGS @ 4.5V, TA=25℃ 1
Drain Current ID@TA=100℃ 3.5 A VGS @ 4.5V, TA=100℃ 1
Pulsed Drain Current IDM 20 A 1
Total Power Dissipation PD@TA=25℃ 1.5 W TA=25℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Maximum Thermal Resistance, Junction-ambient Rthj-a 85 ℃/W 1
Drain-Source Breakdown Voltage BVDSS 60 V VGS=0V, ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VGS=0V, VDS=60V 2
Gate-Source Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0A 2
Gate-Source Threshold Voltage VGS(th) 1.5 1.57 2.5 V VGS=VDS, ID=250μA 2
Drain-Source On Resistance RDS(ON) 25 33 mΩ VGS=10V, ID=4A 2
Drain-Source On Resistance RDS(ON) 33 43 mΩ VGS=4.5V, ID=3A 2
Diode Forward Voltage VSD 1.2 V VGS=0V, ISD=1A 2
Continuous Drain Current IS 5 A VD=VG=0V 2
Pulsed Drain Current ISM 20 A 2

CAD (KiCad official)

  • Symbol: DMN6070SSD-HXY
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: dmn6070ssd-hxy-etched.step / dmn6070ssd-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); dmn6070ssd-hxy.step / dmn6070ssd-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (6 pp, sha256 0aa79f111e9fbbeb, retrieved 2026-10-29, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF