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DMN6040SVTQ-7
Public Made by Adomby adom
Diodes Incorporated MOSFETs, TSOT-26. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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dmn6040svtq-7: specified limits as data (metadata.characteristics, 31 rows from the datasheet)
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DMN6040SVTQ-7
Diodes Incorporated · MOSFETs · TSOT-26
DMN6040SVTQ-7 from Diodes Incorporated, in a TSOT-26. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | D | passive | Drain terminal of the 60V N-channel MOSFET, with drain-source voltage rated VDSS = 60 V. |
| 2 | D | passive | Drain terminal of the 60V N-channel MOSFET, with drain-source voltage rated VDSS = 60 V. |
| 3 | G | input | Gate terminal; gate-source voltage is rated VGSS = ±20 V. |
| 4 | S | passive | Source terminal; maximum body diode forward current is IS = 2.1 A. |
| 5 | D | passive | Drain terminal of the 60V N-channel MOSFET, with drain-source voltage rated VDSS = 60 V. |
| 6 | D | passive | Drain terminal of the 60V N-channel MOSFET, with drain-source voltage rated VDSS = 60 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | TSOT-26 |
| Category | Transistors/Thyristors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 60 | V | VGS = 0V, ID = 250µA | 4 | ||
| Zero Gate Voltage Drain Current | IDSS | 100 | nA | VDS = 60V, VGS = 0V | 4 | ||
| Gate-Source Leakage | IGSS | 100 | nA | VGS = 20V, VDS = 0V | 4 | ||
| Gate Threshold Voltage | VGS(TH) | 1 | 3 | V | VDS = VGS, ID = 250µA | 4 | |
| Static Drain-Source On-Resistance | RDS(ON) | 30 | 44 | mΩ | VGS = 10V, ID = 4.3A | 4 | |
| Static Drain-Source On-Resistance | RDS(ON) | 35 | 60 | mΩ | VGS = 4.5V, ID = 4A | 4 | |
| Diode Forward Voltage | VSD | 0.7 | 1.2 | V | VGS = 0V, IS = 1A | 4 | |
| Drain-Source Voltage | VDSS | 60 | V | 2 | |||
| Gate-Source Voltage | VGSS | -20 | 20 | V | 2 | ||
| Continuous Drain Current, steady state | ID | 5 | A | VGS = 10V, TA = +25°C | 2 | ||
| Continuous Drain Current, steady state | ID | 4 | A | VGS = 10V, TA = +70°C | 2 | ||
| Continuous Drain Current, t<10s | ID | 6.3 | A | VGS = 10V, TA = +25°C | 2 | ||
| Continuous Drain Current, t<10s | ID | 5 | A | VGS = 10V, TA = +70°C | 2 | ||
| Continuous Drain Current, steady state | ID | 4.3 | A | VGS = 5V, TA = +25°C | 2 | ||
| Continuous Drain Current, steady state | ID | 3.4 | A | VGS = 5V, TA = +70°C | 2 | ||
| Continuous Drain Current, t<10s | ID | 5.4 | A | VGS = 5V, TA = +25°C | 2 | ||
| Continuous Drain Current, t<10s | ID | 4.3 | A | VGS = 5V, TA = +70°C | 2 | ||
| Maximum Body Diode Forward Current | IS | 2.1 | A | 2 | |||
| Pulsed Drain Current | IDM | 30 | A | 10µs Pulse, Duty Cycle = 1% | 2 | ||
| Avalanche Current | IAR | 14.2 | A | L = 0.1mH | 2 | ||
| Avalanche Energy | EAR | 10 | mJ | L = 0.1mH | 2 | ||
| Total Power Dissipation (Note 6) | PD | 1.2 | W | TA = +25°C | 2 | ||
| Total Power Dissipation (Note 6) | PD | 0.75 | W | TA = +70°C | 2 | ||
| Total Power Dissipation (Note 7) | PD | 1.8 | W | TA = +25°C | 2 | ||
| Total Power Dissipation (Note 7) | PD | 1.1 | W | TA = +70°C | 2 | ||
| Thermal Resistance, Junction to Ambient (Note 6) | RθJA | 106 | °C/W | Steady state | 2 | ||
| Thermal Resistance, Junction to Ambient (Note 6) | RθJA | 69 | °C/W | t<10s | 2 | ||
| Thermal Resistance, Junction to Ambient (Note 7) | RθJA | 68 | °C/W | Steady state | 2 | ||
| Thermal Resistance, Junction to Ambient (Note 7) | RθJA | 44 | °C/W | t<10s | 2 | ||
| Thermal Resistance, Junction to Case (Note 7) | RθJC | 20 | °C/W | 2 | |||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 2 |
CAD (KiCad official)
- Symbol:
DMN6040SVTQ-7 - Footprint:
Package_TO_SOT_SMD:TSOT-23-6 - 3D model: TSOT-26 (KiCad packages3D, STEP)
- 3D model files:
dmn6040svtq-7-etched.step/dmn6040svtq-7-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);dmn6040svtq-7.step/dmn6040svtq-7.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Diodes Incorporated datasheet (8 pp, sha256
75d01a8e368a44f6, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# DMN6040SVTQ-7
**Diodes Incorporated** · MOSFETs · TSOT-26
DMN6040SVTQ-7 from Diodes Incorporated, in a TSOT-26. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | D | passive | Drain terminal of the 60V N-channel MOSFET, with drain-source voltage rated VDSS = 60 V. |
| 2 | D | passive | Drain terminal of the 60V N-channel MOSFET, with drain-source voltage rated VDSS = 60 V. |
| 3 | G | input | Gate terminal; gate-source voltage is rated VGSS = ±20 V. |
| 4 | S | passive | Source terminal; maximum body diode forward current is IS = 2.1 A. |
| 5 | D | passive | Drain terminal of the 60V N-channel MOSFET, with drain-source voltage rated VDSS = 60 V. |
| 6 | D | passive | Drain terminal of the 60V N-channel MOSFET, with drain-source voltage rated VDSS = 60 V. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | TSOT-26 |
| Category | Transistors/Thyristors |
| Pins | 6 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 60 | | | V | VGS = 0V, ID = 250µA | 4 |
| Zero Gate Voltage Drain Current | IDSS | | | 100 | nA | VDS = 60V, VGS = 0V | 4 |
| Gate-Source Leakage | IGSS | | | 100 | nA | VGS = 20V, VDS = 0V | 4 |
| Gate Threshold Voltage | VGS(TH) | 1 | | 3 | V | VDS = VGS, ID = 250µA | 4 |
| Static Drain-Source On-Resistance | RDS(ON) | | 30 | 44 | mΩ | VGS = 10V, ID = 4.3A | 4 |
| Static Drain-Source On-Resistance | RDS(ON) | | 35 | 60 | mΩ | VGS = 4.5V, ID = 4A | 4 |
| Diode Forward Voltage | VSD | | 0.7 | 1.2 | V | VGS = 0V, IS = 1A | 4 |
| Drain-Source Voltage | VDSS | | | 60 | V | | 2 |
| Gate-Source Voltage | VGSS | -20 | | 20 | V | | 2 |
| Continuous Drain Current, steady state | ID | | | 5 | A | VGS = 10V, TA = +25°C | 2 |
| Continuous Drain Current, steady state | ID | | | 4 | A | VGS = 10V, TA = +70°C | 2 |
| Continuous Drain Current, t<10s | ID | | | 6.3 | A | VGS = 10V, TA = +25°C | 2 |
| Continuous Drain Current, t<10s | ID | | | 5 | A | VGS = 10V, TA = +70°C | 2 |
| Continuous Drain Current, steady state | ID | | | 4.3 | A | VGS = 5V, TA = +25°C | 2 |
| Continuous Drain Current, steady state | ID | | | 3.4 | A | VGS = 5V, TA = +70°C | 2 |
| Continuous Drain Current, t<10s | ID | | | 5.4 | A | VGS = 5V, TA = +25°C | 2 |
| Continuous Drain Current, t<10s | ID | | | 4.3 | A | VGS = 5V, TA = +70°C | 2 |
| Maximum Body Diode Forward Current | IS | | | 2.1 | A | | 2 |
| Pulsed Drain Current | IDM | | | 30 | A | 10µs Pulse, Duty Cycle = 1% | 2 |
| Avalanche Current | IAR | | | 14.2 | A | L = 0.1mH | 2 |
| Avalanche Energy | EAR | | | 10 | mJ | L = 0.1mH | 2 |
| Total Power Dissipation (Note 6) | PD | | | 1.2 | W | TA = +25°C | 2 |
| Total Power Dissipation (Note 6) | PD | | | 0.75 | W | TA = +70°C | 2 |
| Total Power Dissipation (Note 7) | PD | | | 1.8 | W | TA = +25°C | 2 |
| Total Power Dissipation (Note 7) | PD | | | 1.1 | W | TA = +70°C | 2 |
| Thermal Resistance, Junction to Ambient (Note 6) | RθJA | | | 106 | °C/W | Steady state | 2 |
| Thermal Resistance, Junction to Ambient (Note 6) | RθJA | | | 69 | °C/W | t<10s | 2 |
| Thermal Resistance, Junction to Ambient (Note 7) | RθJA | | | 68 | °C/W | Steady state | 2 |
| Thermal Resistance, Junction to Ambient (Note 7) | RθJA | | | 44 | °C/W | t<10s | 2 |
| Thermal Resistance, Junction to Case (Note 7) | RθJC | | | 20 | °C/W | | 2 |
| Operating and Storage Temperature Range | TJ, TSTG | -55 | | 150 | °C | | 2 |
## CAD (KiCad official)
- Symbol: `DMN6040SVTQ-7`
- Footprint: `Package_TO_SOT_SMD:TSOT-23-6`
- 3D model: TSOT-26 (KiCad packages3D, STEP)
- 3D model files: `dmn6040svtq-7-etched.step` / `dmn6040svtq-7-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `dmn6040svtq-7.step` / `dmn6040svtq-7.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Diodes Incorporated datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588885272410513408) (8 pp, sha256 `75d01a8e368a44f6`, retrieved 2026-10-09, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/dmn6040svtq-7-datasheet.pdf)