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DMN6040SVTQ-7

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Diodes Incorporated MOSFETs, TSOT-26. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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dmn6040svtq-7-etched.glb dmn6040svtq-7: factory component page (tier=lcsc) · Ray 24d ago
dmn6040svtq-7-etched.step dmn6040svtq-7: factory component page (tier=lcsc) · Ray 24d ago
dmn6040svtq-7-hero.glb dmn6040svtq-7: hero GLB from the etched model (keeps the MPN mark) · Ray 24d ago
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page.json dmn6040svtq-7: specified limits as data (metadata.characteristics, 31 rows from the datasheet) · Ray 17d ago
README.md dmn6040svtq-7: specified limits as data (metadata.characteristics, 31 rows from the datasheet) · Ray 17d ago

DMN6040SVTQ-7

Diodes Incorporated · MOSFETs · TSOT-26

DMN6040SVTQ-7 from Diodes Incorporated, in a TSOT-26. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 D passive Drain terminal of the 60V N-channel MOSFET, with drain-source voltage rated VDSS = 60 V.
2 D passive Drain terminal of the 60V N-channel MOSFET, with drain-source voltage rated VDSS = 60 V.
3 G input Gate terminal; gate-source voltage is rated VGSS = ±20 V.
4 S passive Source terminal; maximum body diode forward current is IS = 2.1 A.
5 D passive Drain terminal of the 60V N-channel MOSFET, with drain-source voltage rated VDSS = 60 V.
6 D passive Drain terminal of the 60V N-channel MOSFET, with drain-source voltage rated VDSS = 60 V.

Key specifications

Parameter Value
Manufacturer Diodes Incorporated
Package TSOT-26
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 60 V VGS = 0V, ID = 250µA 4
Zero Gate Voltage Drain Current IDSS 100 nA VDS = 60V, VGS = 0V 4
Gate-Source Leakage IGSS 100 nA VGS = 20V, VDS = 0V 4
Gate Threshold Voltage VGS(TH) 1 3 V VDS = VGS, ID = 250µA 4
Static Drain-Source On-Resistance RDS(ON) 30 44 mΩ VGS = 10V, ID = 4.3A 4
Static Drain-Source On-Resistance RDS(ON) 35 60 mΩ VGS = 4.5V, ID = 4A 4
Diode Forward Voltage VSD 0.7 1.2 V VGS = 0V, IS = 1A 4
Drain-Source Voltage VDSS 60 V 2
Gate-Source Voltage VGSS -20 20 V 2
Continuous Drain Current, steady state ID 5 A VGS = 10V, TA = +25°C 2
Continuous Drain Current, steady state ID 4 A VGS = 10V, TA = +70°C 2
Continuous Drain Current, t<10s ID 6.3 A VGS = 10V, TA = +25°C 2
Continuous Drain Current, t<10s ID 5 A VGS = 10V, TA = +70°C 2
Continuous Drain Current, steady state ID 4.3 A VGS = 5V, TA = +25°C 2
Continuous Drain Current, steady state ID 3.4 A VGS = 5V, TA = +70°C 2
Continuous Drain Current, t<10s ID 5.4 A VGS = 5V, TA = +25°C 2
Continuous Drain Current, t<10s ID 4.3 A VGS = 5V, TA = +70°C 2
Maximum Body Diode Forward Current IS 2.1 A 2
Pulsed Drain Current IDM 30 A 10µs Pulse, Duty Cycle = 1% 2
Avalanche Current IAR 14.2 A L = 0.1mH 2
Avalanche Energy EAR 10 mJ L = 0.1mH 2
Total Power Dissipation (Note 6) PD 1.2 W TA = +25°C 2
Total Power Dissipation (Note 6) PD 0.75 W TA = +70°C 2
Total Power Dissipation (Note 7) PD 1.8 W TA = +25°C 2
Total Power Dissipation (Note 7) PD 1.1 W TA = +70°C 2
Thermal Resistance, Junction to Ambient (Note 6) RθJA 106 °C/W Steady state 2
Thermal Resistance, Junction to Ambient (Note 6) RθJA 69 °C/W t<10s 2
Thermal Resistance, Junction to Ambient (Note 7) RθJA 68 °C/W Steady state 2
Thermal Resistance, Junction to Ambient (Note 7) RθJA 44 °C/W t<10s 2
Thermal Resistance, Junction to Case (Note 7) RθJC 20 °C/W 2
Operating and Storage Temperature Range TJ, TSTG -55 150 °C 2

CAD (KiCad official)

  • Symbol: DMN6040SVTQ-7
  • Footprint: Package_TO_SOT_SMD:TSOT-23-6
  • 3D model: TSOT-26 (KiCad packages3D, STEP)
  • 3D model files: dmn6040svtq-7-etched.step / dmn6040svtq-7-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); dmn6040svtq-7.step / dmn6040svtq-7.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (8 pp, sha256 75d01a8e368a44f6, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF