component
DMN601WK-7
Public Made by Adomby adom
Diodes Incorporated MOSFETs, SOT-323. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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DMN601WK-7
Diodes Incorporated · MOSFETs · SOT-323
DMN601WK-7 from Diodes Incorporated, in a SOT-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate of the N-channel enhancement MOSFET, with an ESD-protected gate and a gate-source voltage limit of ±20 V (VGSS). |
| 2 | Source | passive | Source terminal of the N-channel MOSFET, rated with the device's 60 V drain-source voltage limit (VDSS). |
| 3 | Drain | passive | Drain terminal of the N-channel MOSFET, rated for 60 V drain-source voltage (VDSS) and 300 mA continuous drain current at TA = +25°C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | SOT-323 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 60 | V | 2 | |||
| Gate-Source Voltage | VGSS | -20 | 20 | V | 2 | ||
| Drain Current Continuous | ID | 300 | mA | Note 5: device mounted on FR-4 PCB | 2 | ||
| Drain Current Pulsed | ID | 800 | mA | Note 6: pulse width ≤10µs, duty cycle ≤1% | 2 | ||
| Total Power Dissipation | PD | 200 | mW | Note 5: device mounted on FR-4 PCB | 2 | ||
| Thermal Resistance, Junction to Ambient | RJA | 625 | °C/W | 2 | |||
| Operating and Storage Temperature Range | TJ, TSTG | -65 | 150 | °C | 2 | ||
| Drain-Source Breakdown Voltage | BVDSS | 60 | V | VGS = 0, ID = 10µA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS = 60V, VGS = 0 | 2 | ||
| Gate-Source Leakage | IGSS | -10 | 10 | µA | VGS = ±20V, VDS = 0 | 2 | |
| Gate Threshold Voltage | VGS(th) | 1 | 1.6 | 2.5 | V | VDS = 10V, ID = 1mA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | 1.4 | 2 | Ω | VGS = 10V, ID = 0.5A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 1.5 | 3 | Ω | VGS = 4.5V, ID = 0.2A | 2 | |
| Forward Transfer Admittance | /Yfs/ | 80 | ms | VDS = 10V, ID = 0.2A | 2 | ||
| Input Capacitance | Ciss | 50 | pF | 2 | |||
| Output Capacitance | Coss | 25 | pF | VDS = 25V, VGS = 0, f = 1.0MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 5 | pF | 2 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | tin | • Terminals: Finish ⎯ Matte Tin Annealed over Alloy 42 Leadframe. Solderable per MIL-STD-202, Method 208 | 1 |
CAD (KiCad official)
- Symbol:
DMN601WK-7 - Footprint:
Package_TO_SOT_SMD:SOT-323_SC-70 - 3D model: SOT-323 (KiCad packages3D, STEP)
- 3D model files:
dmn601wk-7-etched.step/dmn601wk-7-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);dmn601wk-7.step/dmn601wk-7.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Diodes Incorporated datasheet (6 pp, sha256
0178bf613160e6a3, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# DMN601WK-7
**Diodes Incorporated** · MOSFETs · SOT-323
DMN601WK-7 from Diodes Incorporated, in a SOT-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate of the N-channel enhancement MOSFET, with an ESD-protected gate and a gate-source voltage limit of ±20 V (VGSS). |
| 2 | Source | passive | Source terminal of the N-channel MOSFET, rated with the device's 60 V drain-source voltage limit (VDSS). |
| 3 | Drain | passive | Drain terminal of the N-channel MOSFET, rated for 60 V drain-source voltage (VDSS) and 300 mA continuous drain current at TA = +25°C. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | SOT-323 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | | | 60 | V | | 2 |
| Gate-Source Voltage | VGSS | -20 | | 20 | V | | 2 |
| Drain Current Continuous | ID | | | 300 | mA | Note 5: device mounted on FR-4 PCB | 2 |
| Drain Current Pulsed | ID | | | 800 | mA | Note 6: pulse width ≤10µs, duty cycle ≤1% | 2 |
| Total Power Dissipation | PD | | | 200 | mW | Note 5: device mounted on FR-4 PCB | 2 |
| Thermal Resistance, Junction to Ambient | RJA | | | 625 | °C/W | | 2 |
| Operating and Storage Temperature Range | TJ, TSTG | -65 | | 150 | °C | | 2 |
| Drain-Source Breakdown Voltage | BVDSS | 60 | | | V | VGS = 0, ID = 10µA | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | µA | VDS = 60V, VGS = 0 | 2 |
| Gate-Source Leakage | IGSS | -10 | | 10 | µA | VGS = ±20V, VDS = 0 | 2 |
| Gate Threshold Voltage | VGS(th) | 1 | 1.6 | 2.5 | V | VDS = 10V, ID = 1mA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 1.4 | 2 | Ω | VGS = 10V, ID = 0.5A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 1.5 | 3 | Ω | VGS = 4.5V, ID = 0.2A | 2 |
| Forward Transfer Admittance | /Yfs/ | 80 | | | ms | VDS = 10V, ID = 0.2A | 2 |
| Input Capacitance | Ciss | | | 50 | pF | | 2 |
| Output Capacitance | Coss | | | 25 | pF | VDS = 25V, VGS = 0, f = 1.0MHz | 2 |
| Reverse Transfer Capacitance | Crss | | | 5 | pF | | 2 |
## Materials and finish
As the datasheet states them (page.json `metadata.appearance`; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | | tin | • Terminals: Finish ⎯ Matte Tin Annealed over Alloy 42 Leadframe. Solderable per MIL-STD-202, Method 208 | 1 |
## CAD (KiCad official)
- Symbol: `DMN601WK-7`
- Footprint: `Package_TO_SOT_SMD:SOT-323_SC-70`
- 3D model: SOT-323 (KiCad packages3D, STEP)
- 3D model files: `dmn601wk-7-etched.step` / `dmn601wk-7-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `dmn601wk-7.step` / `dmn601wk-7.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Diodes Incorporated datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8586203582969860096) (6 pp, sha256 `0178bf613160e6a3`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/dmn601wk-7-datasheet.pdf)