component
DMN601DMK-7
Public Made by Adomby adom
Diodes Incorporated MOSFETs, SOT-26. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
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DMN601DMK-7
Diodes Incorporated · MOSFETs · SOT-26
DMN601DMK-7 from Diodes Incorporated, in a SOT-26. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of MOSFET 1 (N-channel, 60V VDSS), per the top-view internal schematic. |
| 2 | G1 | input | Gate of MOSFET 1, with internal gate protection diode (ESD protected to 2kV), VGSS ±20V maximum. |
| 3 | D2 | passive | Drain of MOSFET 2 (60V VDSS, 510mA continuous ID at VGS=10V, TA=25°C). |
| 4 | S2 | passive | Source of MOSFET 2 (N-channel, 60V VDSS), per the top-view internal schematic. |
| 5 | G2 | input | Gate of MOSFET 2, with internal gate protection diode (ESD protected to 2kV), VGSS ±20V maximum. |
| 6 | D1 | passive | Drain of MOSFET 1 (60V VDSS, 510mA continuous ID at VGS=10V, TA=25°C). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | SOT-26 |
| Category | Transistors/Thyristors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 60 | V | VGS = 0V, ID = 10µA | 3 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS = 60V, VGS = 0V | 3 | ||
| Gate-Source Leakage | IGSS | 10 | µA | VGS = 20V, VDS = 0V | 3 | ||
| Gate Threshold Voltage | VGS(th) | 1 | 1.6 | 2.5 | V | VDS = 10V, ID = 1mA | 3 |
| Static Drain-Source On-Resistance | RDS(ON) | 2.4 | Ω | VGS = 10V, ID = 200mA | 3 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 4 | Ω | VGS = 4V, ID = 200mA | 3 | ||
| Forward Transfer Admittance | /Yfs/ | 100 | mS | VDS = 10V, ID = 200mA | 3 | ||
| Diode Forward Voltage | VSD | 0.5 | 1.4 | V | VGS = 0V, IS = 115mA | 3 | |
| Input Capacitance | Ciss | 30 | 50 | pF | VDS = 25V, VGS = 0V, f = 1.0MHz | 3 | |
| Output Capacitance | Coss | 5 | 25 | pF | VDS = 25V, VGS = 0V, f = 1.0MHz | 3 | |
| Reverse Transfer Capacitance | Crss | 3 | 5 | pF | VDS = 25V, VGS = 0V, f = 1.0MHz | 3 | |
| Drain-Source Voltage | VDSS | 60 | V | 2 | |||
| Gate-Source Voltage | VGSS | -20 | 20 | V | 2 | ||
| Continuous Drain Current, steady state TA = +25°C | ID | 510 | mA | VGS = 10V, steady state (Note 6) | 2 | ||
| Continuous Drain Current, steady state TA = +70°C | ID | 400 | mA | VGS = 10V, steady state (Note 6) | 2 | ||
| Continuous Drain Current, t<10s TA = +25°C | ID | 580 | mA | VGS = 10V, t<10s (Note 6) | 2 | ||
| Continuous Drain Current, t<10s TA = +70°C | ID | 470 | mA | VGS = 10V, t<10s (Note 6) | 2 | ||
| Continuous Drain Current, steady state TA = +25°C | ID | 390 | mA | VGS = 4V, steady state (Note 6) | 2 | ||
| Continuous Drain Current, steady state TA = +70°C | ID | 300 | mA | VGS = 4V, steady state (Note 6) | 2 | ||
| Continuous Drain Current, t<10s TA = +25°C | ID | 440 | mA | VGS = 4V, t<10s (Note 6) | 2 | ||
| Continuous Drain Current, t<10s TA = +70°C | ID | 340 | mA | VGS = 4V, t<10s (Note 6) | 2 | ||
| Pulsed Drain Current | IDM | 850 | mA | 10µs Pulse, Duty Cycle = 1% | 2 | ||
| Maximum Body Diode Continuous Current | IS | 1.2 | A | 2 | |||
| Total Power Dissipation | PD | 0.7 | W | Note 5: FR-4 PC board, minimum recommended pad layout, single sided | 2 | ||
| Total Power Dissipation | PD | 0.98 | W | Note 6: FR-4, 2oz copper, thermal bias to bottom layer 1 inch square copper plate | 2 | ||
| Thermal Resistance, Junction to Ambient, steady state | RθJA | 157 | °C/W | Note 5 | 2 | ||
| Thermal Resistance, Junction to Ambient, t<10s | RθJA | 121 | °C/W | Note 5 | 2 | ||
| Thermal Resistance, Junction to Ambient, steady state | RθJA | 113 | °C/W | Note 6 | 2 | ||
| Thermal Resistance, Junction to Ambient, t<10s | RθJA | 88 | °C/W | Note 6 | 2 | ||
| Thermal Resistance, Junction to Case | RθJC | 26 | °C/W | Note 6 | 2 | ||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 2 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | Copper | tin | Terminal Connections: See Diagram Terminals: Finish Matte Tin Annealed over Copper | 1 |
CAD (KiCad official)
- Symbol:
DMN601DMK-7 - Footprint:
Package_TO_SOT_SMD:SOT-23-6 - 3D model: SOT-26 (KiCad packages3D, STEP)
- 3D model files:
dmn601dmk-7-etched.step/dmn601dmk-7-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);dmn601dmk-7.step/dmn601dmk-7.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Diodes Incorporated datasheet (7 pp, sha256
a6d6ad47c58045dd, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).