component
DMN5L06DMK-7
Public Made by Adomby adom
Diodes Incorporated MOSFETs, SOT-26. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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DMN5L06DMK-7
Diodes Incorporated · MOSFETs · SOT-26
DMN5L06DMK-7 from Diodes Incorporated, in a SOT-26. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S2 | passive | Source of MOSFET 2 (N-channel), with drain-source voltage rated 50 V. |
| 2 | G2 | input | Gate of MOSFET 2, ESD protected up to 2 kV, with gate-source voltage rated ±20 V and gate threshold of 0.49 V min to 1.0 V max. |
| 3 | D1 | passive | Drain of MOSFET 1, with drain-source voltage rated 50 V and continuous drain current of 305 mA. |
| 4 | S1 | passive | Source of MOSFET 1 (N-channel), with drain-source voltage rated 50 V. |
| 5 | G1 | input | Gate of MOSFET 1, ESD protected up to 2 kV, with gate-source voltage rated ±20 V and gate threshold of 0.49 V min to 1.0 V max. |
| 6 | D2 | passive | Drain of MOSFET 2, with drain-source voltage rated 50 V and continuous drain current of 305 mA. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | SOT-26 |
| Category | Transistors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 50 | V | VGS = 0V, ID = 10μA | 1 | ||
| Zero Gate Voltage Drain Current | IDSS | 60 | nA | VDS = 50V, VGS = 0V | 1 | ||
| Gate-Body Leakage | IGSS | 1 | μA | VGS = ±12V, VDS = 0V | 1 | ||
| Gate-Body Leakage | IGSS | 500 | nA | VGS = ±10V, VDS = 0V | 1 | ||
| Gate-Body Leakage | IGSS | 50 | nA | VGS = ±5V, VDS = 0V | 1 | ||
| Gate Threshold Voltage | VGS(th) | 0.49 | 1 | V | VDS = VGS, ID = 250μA | 1 | |
| Static Drain-Source On-Resistance | RDS(ON) | 3 | Ω | VGS = 1.8V, ID = 50mA | 1 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 2.5 | Ω | VGS = 2.5V, ID = 50mA | 1 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 2 | Ω | VGS = 5.0V, ID = 50mA | 1 | ||
| On-State Drain Current | ID(ON) | 0.5 | 1.4 | A | VGS = 10V, VDS = 7.5V | 1 | |
| Forward Transconductance | /Yfs/ | 200 | mS | VDS =10V, ID = 0.2A | 1 | ||
| Source-Drain Diode Forward Voltage | VSD | 0.5 | 1.4 | V | VGS = 0V, IS = 115mA | 1 | |
| Input Capacitance | Ciss | 50 | pF | VDS = 25V, VGS = 0V, f = 1.0MHz | 1 | ||
| Output Capacitance | Coss | 25 | pF | VDS = 25V, VGS = 0V, f = 1.0MHz | 1 | ||
| Reverse Transfer Capacitance | Crss | 5 | pF | VDS = 25V, VGS = 0V, f = 1.0MHz | 1 | ||
| Drain Source Voltage | VDSS | 50 | V | TA = 25°C | 1 | ||
| Gate-Source Voltage | VGSS | -20 | 20 | V | TA = 25°C | 1 | |
| Drain Current Continuous | ID | 305 | mA | TA = 25°C, Note 1 | 1 | ||
| Drain Current Pulsed | ID | 800 | mA | TA = 25°C, Note 3: pulse width ≤10μS, duty cycle ≤1% | 1 | ||
| Total Power Dissipation | PD | 400 | mW | TA = 25°C, Note 1 | 1 | ||
| Operating and Storage Temperature Range | Tj, TSTG | -65 | 150 | °C | 1 | ||
| Thermal Resistance, Junction to Ambient | RθJA | 313 | °C/W | TA = 25°C, Note 1 | 1 | ||
| Thermal Resistance, Junction to Ambient (derating curve) | RθJA | 556 | °C/W | Fig. 11 Derating Curve | 3 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | Copper | tin | • Terminal Connections: See Diagram • Terminals: Finish, Matte Tin annealed over Copper | 1 |
CAD (KiCad official)
- Symbol:
DMN5L06DMK-7 - Footprint:
Package_TO_SOT_SMD:SOT-23-6 - 3D model: SOT-26 (KiCad packages3D, STEP)
- 3D model files:
dmn5l06dmk-7-etched.step/dmn5l06dmk-7-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);dmn5l06dmk-7.step/dmn5l06dmk-7.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Diodes Incorporated datasheet (4 pp, sha256
d8de36a387beac63, retrieved 2026-10-22, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# DMN5L06DMK-7
**Diodes Incorporated** · MOSFETs · SOT-26
DMN5L06DMK-7 from Diodes Incorporated, in a SOT-26. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S2 | passive | Source of MOSFET 2 (N-channel), with drain-source voltage rated 50 V. |
| 2 | G2 | input | Gate of MOSFET 2, ESD protected up to 2 kV, with gate-source voltage rated ±20 V and gate threshold of 0.49 V min to 1.0 V max. |
| 3 | D1 | passive | Drain of MOSFET 1, with drain-source voltage rated 50 V and continuous drain current of 305 mA. |
| 4 | S1 | passive | Source of MOSFET 1 (N-channel), with drain-source voltage rated 50 V. |
| 5 | G1 | input | Gate of MOSFET 1, ESD protected up to 2 kV, with gate-source voltage rated ±20 V and gate threshold of 0.49 V min to 1.0 V max. |
| 6 | D2 | passive | Drain of MOSFET 2, with drain-source voltage rated 50 V and continuous drain current of 305 mA. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | SOT-26 |
| Category | Transistors |
| Pins | 6 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 50 | | | V | VGS = 0V, ID = 10μA | 1 |
| Zero Gate Voltage Drain Current | IDSS | | | 60 | nA | VDS = 50V, VGS = 0V | 1 |
| Gate-Body Leakage | IGSS | | | 1 | μA | VGS = ±12V, VDS = 0V | 1 |
| Gate-Body Leakage | IGSS | | | 500 | nA | VGS = ±10V, VDS = 0V | 1 |
| Gate-Body Leakage | IGSS | | | 50 | nA | VGS = ±5V, VDS = 0V | 1 |
| Gate Threshold Voltage | VGS(th) | 0.49 | | 1 | V | VDS = VGS, ID = 250μA | 1 |
| Static Drain-Source On-Resistance | RDS(ON) | | | 3 | Ω | VGS = 1.8V, ID = 50mA | 1 |
| Static Drain-Source On-Resistance | RDS(ON) | | | 2.5 | Ω | VGS = 2.5V, ID = 50mA | 1 |
| Static Drain-Source On-Resistance | RDS(ON) | | | 2 | Ω | VGS = 5.0V, ID = 50mA | 1 |
| On-State Drain Current | ID(ON) | 0.5 | 1.4 | | A | VGS = 10V, VDS = 7.5V | 1 |
| Forward Transconductance | /Yfs/ | 200 | | | mS | VDS =10V, ID = 0.2A | 1 |
| Source-Drain Diode Forward Voltage | VSD | 0.5 | | 1.4 | V | VGS = 0V, IS = 115mA | 1 |
| Input Capacitance | Ciss | | | 50 | pF | VDS = 25V, VGS = 0V, f = 1.0MHz | 1 |
| Output Capacitance | Coss | | | 25 | pF | VDS = 25V, VGS = 0V, f = 1.0MHz | 1 |
| Reverse Transfer Capacitance | Crss | | | 5 | pF | VDS = 25V, VGS = 0V, f = 1.0MHz | 1 |
| Drain Source Voltage | VDSS | | | 50 | V | TA = 25°C | 1 |
| Gate-Source Voltage | VGSS | -20 | | 20 | V | TA = 25°C | 1 |
| Drain Current Continuous | ID | | | 305 | mA | TA = 25°C, Note 1 | 1 |
| Drain Current Pulsed | ID | | | 800 | mA | TA = 25°C, Note 3: pulse width ≤10μS, duty cycle ≤1% | 1 |
| Total Power Dissipation | PD | | | 400 | mW | TA = 25°C, Note 1 | 1 |
| Operating and Storage Temperature Range | Tj, TSTG | -65 | | 150 | °C | | 1 |
| Thermal Resistance, Junction to Ambient | RθJA | | 313 | | °C/W | TA = 25°C, Note 1 | 1 |
| Thermal Resistance, Junction to Ambient (derating curve) | RθJA | | 556 | | °C/W | Fig. 11 Derating Curve | 3 |
## Materials and finish
As the datasheet states them (page.json `metadata.appearance`; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | Copper | tin | • Terminal Connections: See Diagram • Terminals: Finish, Matte Tin annealed over Copper | 1 |
## CAD (KiCad official)
- Symbol: `DMN5L06DMK-7`
- Footprint: `Package_TO_SOT_SMD:SOT-23-6`
- 3D model: SOT-26 (KiCad packages3D, STEP)
- 3D model files: `dmn5l06dmk-7-etched.step` / `dmn5l06dmk-7-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `dmn5l06dmk-7.step` / `dmn5l06dmk-7.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Diodes Incorporated datasheet](https://www.diodes.com/assets/Datasheets/DMN5L06DMK-7.pdf) (4 pp, sha256 `d8de36a387beac63`, retrieved 2026-10-22, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/dmn5l06dmk-7-datasheet.pdf)