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DMN5L06DMK-7

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Diodes Incorporated MOSFETs, SOT-26. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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DMN5L06DMK-7

Diodes Incorporated · MOSFETs · SOT-26

DMN5L06DMK-7 from Diodes Incorporated, in a SOT-26. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S2 passive Source of MOSFET 2 (N-channel), with drain-source voltage rated 50 V.
2 G2 input Gate of MOSFET 2, ESD protected up to 2 kV, with gate-source voltage rated ±20 V and gate threshold of 0.49 V min to 1.0 V max.
3 D1 passive Drain of MOSFET 1, with drain-source voltage rated 50 V and continuous drain current of 305 mA.
4 S1 passive Source of MOSFET 1 (N-channel), with drain-source voltage rated 50 V.
5 G1 input Gate of MOSFET 1, ESD protected up to 2 kV, with gate-source voltage rated ±20 V and gate threshold of 0.49 V min to 1.0 V max.
6 D2 passive Drain of MOSFET 2, with drain-source voltage rated 50 V and continuous drain current of 305 mA.

Key specifications

Parameter Value
Manufacturer Diodes Incorporated
Package SOT-26
Category Transistors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 50 V VGS = 0V, ID = 10μA 1
Zero Gate Voltage Drain Current IDSS 60 nA VDS = 50V, VGS = 0V 1
Gate-Body Leakage IGSS 1 μA VGS = ±12V, VDS = 0V 1
Gate-Body Leakage IGSS 500 nA VGS = ±10V, VDS = 0V 1
Gate-Body Leakage IGSS 50 nA VGS = ±5V, VDS = 0V 1
Gate Threshold Voltage VGS(th) 0.49 1 V VDS = VGS, ID = 250μA 1
Static Drain-Source On-Resistance RDS(ON) 3 Ω VGS = 1.8V, ID = 50mA 1
Static Drain-Source On-Resistance RDS(ON) 2.5 Ω VGS = 2.5V, ID = 50mA 1
Static Drain-Source On-Resistance RDS(ON) 2 Ω VGS = 5.0V, ID = 50mA 1
On-State Drain Current ID(ON) 0.5 1.4 A VGS = 10V, VDS = 7.5V 1
Forward Transconductance /Yfs/ 200 mS VDS =10V, ID = 0.2A 1
Source-Drain Diode Forward Voltage VSD 0.5 1.4 V VGS = 0V, IS = 115mA 1
Input Capacitance Ciss 50 pF VDS = 25V, VGS = 0V, f = 1.0MHz 1
Output Capacitance Coss 25 pF VDS = 25V, VGS = 0V, f = 1.0MHz 1
Reverse Transfer Capacitance Crss 5 pF VDS = 25V, VGS = 0V, f = 1.0MHz 1
Drain Source Voltage VDSS 50 V TA = 25°C 1
Gate-Source Voltage VGSS -20 20 V TA = 25°C 1
Drain Current Continuous ID 305 mA TA = 25°C, Note 1 1
Drain Current Pulsed ID 800 mA TA = 25°C, Note 3: pulse width ≤10μS, duty cycle ≤1% 1
Total Power Dissipation PD 400 mW TA = 25°C, Note 1 1
Operating and Storage Temperature Range Tj, TSTG -65 150 °C 1
Thermal Resistance, Junction to Ambient RθJA 313 °C/W TA = 25°C, Note 1 1
Thermal Resistance, Junction to Ambient (derating curve) RθJA 556 °C/W Fig. 11 Derating Curve 3

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
contacts Copper tin • Terminal Connections: See Diagram • Terminals: Finish, Matte Tin annealed over Copper 1

CAD (KiCad official)

  • Symbol: DMN5L06DMK-7
  • Footprint: Package_TO_SOT_SMD:SOT-23-6
  • 3D model: SOT-26 (KiCad packages3D, STEP)
  • 3D model files: dmn5l06dmk-7-etched.step / dmn5l06dmk-7-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); dmn5l06dmk-7.step / dmn5l06dmk-7.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (4 pp, sha256 d8de36a387beac63, retrieved 2026-10-22, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF