# DMN53D0LQ-HXY

**HXY MOSFET** · MOSFETs · SOT-23

DMN53D0LQ-HXY from HXY MOSFET, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage is limited to ±20V, with a threshold of 0.8V min to 1.5V max at ID=1mA. |
| 2 | S | passive | Source terminal of the N-channel MOSFET, shown on the package drawing and symbol as S. |
| 3 | D | passive | Drain; drain-source voltage is rated 50V, with continuous drain current of 0.22A at TA=25℃ and 0.88A pulsed. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | 50 | V |  | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Continuous Drain Current | ID |  |  | 0.22 | A | TJ =150℃, TA =25℃ | 1 |
| Continuous Drain Current | ID |  |  | 0.13 | A | TJ =150℃, TA =100℃ | 1 |
| Drain Current-Pulsed | IDM |  |  | 0.88 | A | Note 1 | 1 |
| Maximum Power Dissipation | PD |  |  | 0.35 | W |  | 1 |
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 |  | 150 | ℃ |  | 1 |
| Thermal Resistance, Junction-to-Ambient | RθJA |  |  | 357 | ℃/W | Note 2 | 1 |
| Drain-source breakdown voltage | V(BR)DSS | 50 |  |  | V | VGS = 0V, ID =250µA | 2 |
| Gate-body leakage | IGSS | -100 |  | 100 | nA | VDS =0V, VGS =±20V | 2 |
| Zero gate voltage drain current | IDSS |  |  | 0.5 | µA | VDS =50V, VGS =0V | 2 |
| Zero gate voltage drain current | IDSS |  |  | 100 | nA | VDS =30V, VGS =0V | 2 |
| Gate-threshold voltage (note 1) | VGS(th) | 0.8 |  | 1.5 | V | VDS =VGS, ID =1mA | 2 |
| Static drain-source on-resistance (note 1) | RDS(on) |  |  | 2 | Ω | VGS =10V, ID =0.22A | 2 |
| Static drain-source on-resistance (note 1) | RDS(on) |  |  | 3 | Ω | VGS =4.5V, ID =0.22A | 2 |
| Forward transconductance (note 1) | gFS | 0.12 |  |  | S | VDS =10V, ID =0.22A | 2 |
| Body diode forward voltage (note 1) | VSD |  |  | 1.4 | V | IS=0.44A, VGS = 0V | 2 |

## CAD (KiCad official)

- Symbol: `DMN53D0LQ-HXY`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `dmn53d0lq-hxy-etched.step` / `dmn53d0lq-hxy-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `dmn53d0lq-hxy.step` / `dmn53d0lq-hxy.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [HXY MOSFET datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8758126699349590016) (5 pp, sha256 `84c6f09d6141d449`, retrieved 2026-10-20, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/dmn53d0lq-hxy-datasheet.pdf)