component
DMN53D0LQ-HXY
Public Made by Adomby adom
HXY MOSFET MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 14d ago |
| viewers | 14d ago |
| dmn53d0lq-hxy-etched.glb | 14d ago |
| dmn53d0lq-hxy-etched.step | 14d ago |
| dmn53d0lq-hxy-hero.glb | 14d ago |
| dmn53d0lq-hxy-hero.overlay.json | 14d ago |
| dmn53d0lq-hxy.glb | 14d ago |
| dmn53d0lq-hxy.kicad_mod | 14d ago |
| dmn53d0lq-hxy.kicad_sym | 14d ago |
| dmn53d0lq-hxy.lbr | 14d ago |
| dmn53d0lq-hxy.step | 14d ago |
| package.json | 14d ago |
| page.json | 14d ago |
| README.md | 14d ago |
DMN53D0LQ-HXY
HXY MOSFET · MOSFETs · SOT-23
DMN53D0LQ-HXY from HXY MOSFET, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage is limited to ±20V, with a threshold of 0.8V min to 1.5V max at ID=1mA. |
| 2 | S | passive | Source terminal of the N-channel MOSFET, shown on the package drawing and symbol as S. |
| 3 | D | passive | Drain; drain-source voltage is rated 50V, with continuous drain current of 0.22A at TA=25℃ and 0.88A pulsed. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 50 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | 0.22 | A | TJ =150℃, TA =25℃ | 1 | ||
| Continuous Drain Current | ID | 0.13 | A | TJ =150℃, TA =100℃ | 1 | ||
| Drain Current-Pulsed | IDM | 0.88 | A | Note 1 | 1 | ||
| Maximum Power Dissipation | PD | 0.35 | W | 1 | |||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance, Junction-to-Ambient | RθJA | 357 | ℃/W | Note 2 | 1 | ||
| Drain-source breakdown voltage | V(BR)DSS | 50 | V | VGS = 0V, ID =250µA | 2 | ||
| Gate-body leakage | IGSS | -100 | 100 | nA | VDS =0V, VGS =±20V | 2 | |
| Zero gate voltage drain current | IDSS | 0.5 | µA | VDS =50V, VGS =0V | 2 | ||
| Zero gate voltage drain current | IDSS | 100 | nA | VDS =30V, VGS =0V | 2 | ||
| Gate-threshold voltage (note 1) | VGS(th) | 0.8 | 1.5 | V | VDS =VGS, ID =1mA | 2 | |
| Static drain-source on-resistance (note 1) | RDS(on) | 2 | Ω | VGS =10V, ID =0.22A | 2 | ||
| Static drain-source on-resistance (note 1) | RDS(on) | 3 | Ω | VGS =4.5V, ID =0.22A | 2 | ||
| Forward transconductance (note 1) | gFS | 0.12 | S | VDS =10V, ID =0.22A | 2 | ||
| Body diode forward voltage (note 1) | VSD | 1.4 | V | IS=0.44A, VGS = 0V | 2 |
CAD (KiCad official)
- Symbol:
DMN53D0LQ-HXY - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
dmn53d0lq-hxy-etched.step/dmn53d0lq-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);dmn53d0lq-hxy.step/dmn53d0lq-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (5 pp, sha256
84c6f09d6141d449, retrieved 2026-10-20, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).