# DMN4800LSSQ-13

**Diodes Incorporated** · MOSFETs · SO-8

DMN4800LSSQ-13 from Diodes Incorporated, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the N-channel MOSFET, pin 1 at the left-top of the top-view internal schematic. |
| 2 | S | passive | Source of the N-channel MOSFET. |
| 3 | S | passive | Source of the N-channel MOSFET. |
| 4 | G | input | Gate of the N-channel MOSFET, with a threshold VGS(th) of 0.8 to 1.6 V and a maximum VGSS of 25 V. |
| 5 | D | passive | Drain of the N-channel MOSFET, rated for VDSS of 30 V. |
| 6 | D | passive | Drain of the N-channel MOSFET, rated for VDSS of 30 V. |
| 7 | D | passive | Drain of the N-channel MOSFET, rated for VDSS of 30 V. |
| 8 | D | passive | Drain of the N-channel MOSFET, rated for VDSS of 30 V. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | SO-8 |
| Category | Transistors |
| Pins | 8 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 30 |  |  | V | VGS = 0V, ID = 250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | μA | VDS = 30V, VGS = 0V | 2 |
| Gate-Source Leakage | IGSS |  |  | 100 | nA | VGS = 20V, VDS = 0V | 2 |
| Gate Threshold Voltage | VGS(th) | 0.8 | 1.2 | 1.6 | V | VDS = VGS, ID = 250μA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 11 | 14 | mΩ | VGS = 10V, ID = 9A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 14 | 20 | mΩ | VGS = 4.5V, ID = 7A | 2 |
| Diode Forward Voltage | VSD |  | 0.72 | 0.94 | V | VGS = 0V, IS = 1A | 2 |
| Drain-Source Voltage | VDSS |  |  | 30 | V | TA = +25°C | 2 |
| Gate-Source Voltage | VGSS |  |  | 25 | V | TA = +25°C | 2 |
| Continuous Drain Current, steady state | ID |  |  | 8.6 | A | VGS = 10V, TA = +25°C, Steady State (Note 7) | 2 |
| Continuous Drain Current, steady state | ID |  |  | 6.3 | A | VGS = 10V, TA = +70°C, Steady State (Note 7) | 2 |
| Continuous Drain Current, t<10s | ID |  |  | 11.8 | A | VGS = 10V, TA = +25°C, t<10s (Note 7) | 2 |
| Continuous Drain Current, t<10s | ID |  |  | 9 | A | VGS = 10V, TA = +70°C, t<10s (Note 7) | 2 |
| Maximum Body Diode Forward Current | IS |  |  | 2.4 | A | Note 7 | 2 |
| Pulsed Drain Current | IDM |  |  | 50 | A | Note 8 | 2 |
| Total Power Dissipation (Note 6) | PD |  |  | 1.46 | W | TA = +25°C | 2 |
| Total Power Dissipation (Note 6) | PD |  |  | 0.9 | W | TA = +70°C | 2 |
| Thermal Resistance, Junction to Ambient (Note 6) | RθJA |  |  | 86 | °C/W | Steady state | 2 |
| Thermal Resistance, Junction to Ambient (Note 6) | RθJA |  |  | 46 | °C/W | t<10s | 2 |
| Total Power Dissipation (Note 7) | PD |  |  | 1.7 | W | TA = +25°C | 2 |
| Total Power Dissipation (Note 7) | PD |  |  | 1 | W | TA = +70°C | 2 |
| Thermal Resistance, Junction to Ambient (Note 7) | RθJA |  |  | 75 | °C/W | Steady state | 2 |
| Thermal Resistance, Junction to Ambient (Note 7) | RθJA |  |  | 40 | °C/W | t<10s | 2 |
| Thermal Resistance, Junction to Case (Note 7) | RθJC |  |  | 15 | °C/W |  | 2 |
| Operating and Storage Temperature Range | TJ, TSTG | -55 |  | 150 | °C |  | 2 |
| Forward Transconductance | gfs |  | 8 |  | S | VDS = 10V, ID = 9A | 2 |
| Input Capacitance | Ciss |  | 798 |  | pF | VDS = 10V, VGS = 0V, f = 1.0MHz | 2 |
| Output Capacitance | Coss |  | 128 |  | pF | VDS = 10V, VGS = 0V, f = 1.0MHz | 2 |
| Reverse Transfer Capacitance | Crss |  | 122 |  | pF | VDS = 10V, VGS = 0V, f = 1.0MHz | 2 |
| Gate Resistance | RG |  | 1.37 |  | Ω | VDS = 0V, VGS = 0V, f = 1.0MHz | 2 |
| Total Gate Charge | Qg |  | 8.7 |  | nC | VGS = 5V, VDS = 15V, ID = 9A | 2 |
| Gate-Source Charge | Qgs |  | 1.7 |  | nC | VGS = 5V, VDS = 15V, ID = 9A | 2 |
| Gate-Drain Charge | Qgd |  | 2.4 |  | nC | VGS = 5V, VDS = 15V, ID = 9A | 2 |
| Turn-On Delay Time | td(on) |  | 5.03 |  | ns | VDD = 15V, VGEN = 10V, RL = 15Ω, RG = 6.0Ω, ID = 1A | 2 |
| Rise Time | tr |  | 4.5 |  | ns | VDD = 15V, VGEN = 10V, RL = 15Ω, RG = 6.0Ω, ID = 1A | 2 |
| Turn-Off Delay Time | td(off) |  | 26.33 |  | ns | VDD = 15V, VGEN = 10V, RL = 15Ω, RG = 6.0Ω, ID = 1A | 2 |
| Fall Time | tf |  | 8.55 |  | ns | VDD = 15V, VGEN = 10V, RL = 15Ω, RG = 6.0Ω, ID = 1A | 2 |

## Materials and finish

As the datasheet states them (page.json `metadata.appearance`; the 3D model's colours follow it).

| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | Copper | tin |  Terminals Connections: See Diagram  Terminals: Finish - Matte Tin Annealed over Copper Leadframe. | 1 |

## CAD (KiCad official)

- Symbol: `DMN4800LSSQ-13`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files: `dmn4800lssq-13-etched.step` / `dmn4800lssq-13-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `dmn4800lssq-13.step` / `dmn4800lssq-13.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Diodes Incorporated datasheet](https://www.diodes.com/assets/Datasheets/DMN4800LSSQ-13.pdf) (6 pp, sha256 `b36d8f7295934ff6`, retrieved 2026-10-22, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/dmn4800lssq-13-datasheet.pdf)