component

DMN4800LSS-13

Public Made by Adom

by adom

Diodes Incorporated MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsdmn4800lss-13factory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
Download ZIP Propose a change
Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 17d ago
viewers dmn4800lss-13: viewers · Ray 17d ago
dmn4800lss-13-etched.glb Publish 0.1.0 · Ray 17d ago
dmn4800lss-13-etched.step dmn4800lss-13: factory component page (tier=lcsc) · Ray 17d ago
dmn4800lss-13-hero.glb dmn4800lss-13: hero GLB from the etched model (keeps the MPN mark) · Ray 17d ago
dmn4800lss-13-hero.overlay.json Publish 0.1.0 · Ray 17d ago
dmn4800lss-13.glb Publish 0.1.0 · Ray 17d ago
dmn4800lss-13.kicad_mod Publish 0.1.0 · Ray 17d ago
dmn4800lss-13.kicad_sym Publish 0.1.0 · Ray 17d ago
dmn4800lss-13.lbr Publish 0.1.0 · Ray 17d ago
dmn4800lss-13.step Publish 0.1.0 · Ray 17d ago
package.json Publish 0.1.0 · Ray 17d ago
page.json Set visibility: public · Ray 17d ago
README.md Publish 0.1.0 · Ray 17d ago

DMN4800LSS-13

Diodes Incorporated · MOSFETs · SO-8

DMN4800LSS-13 from Diodes Incorporated, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source terminal of the N-channel MOSFET, tied to the other source pins.
2 S passive Source terminal of the N-channel MOSFET, tied to the other source pins.
3 S passive Source terminal of the N-channel MOSFET, tied to the other source pins.
4 G input Gate terminal; gate-source voltage is rated at 25V maximum with a threshold of 0.8V to 1.6V.
5 D passive Drain terminal, rated at 30V VDSS and 8.6A continuous at TA=+25°C, tied to the other drain pins.
6 D passive Drain terminal, rated at 30V VDSS and 8.6A continuous at TA=+25°C, tied to the other drain pins.
7 D passive Drain terminal, rated at 30V VDSS and 8.6A continuous at TA=+25°C, tied to the other drain pins.
8 D passive Drain terminal, rated at 30V VDSS and 8.6A continuous at TA=+25°C, tied to the other drain pins.

Key specifications

Parameter Value
Manufacturer Diodes Incorporated
Package SO-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS 30 V 2
Gate-Source Voltage VGSS 25 V 2
Continuous Drain Current, steady state ID 8.6 A VGS = 10V, TA = +25°C, steady state 2
Continuous Drain Current, steady state ID 6.3 A VGS = 10V, TA = +70°C, steady state 2
Continuous Drain Current, t<10s ID 11.8 A VGS = 10V, TA = +25°C, t<10s 2
Continuous Drain Current, t<10s ID 9 A VGS = 10V, TA = +70°C, t<10s 2
Maximum Body Diode Forward Current IS 2.4 A 2
Pulsed Drain Current IDM 50 A Note 7: repetitive, pulse width limited by junction temperature 2
Total Power Dissipation PD 1.46 W TA = +25°C, Note 5 2
Total Power Dissipation PD 0.9 W TA = +70°C, Note 5 2
Total Power Dissipation PD 1.7 W TA = +25°C, Note 6 2
Total Power Dissipation PD 1 W TA = +70°C, Note 6 2
Thermal Resistance, Junction to Ambient RJA 86 °C/W Steady state, Note 5 2
Thermal Resistance, Junction to Ambient RJA 46 °C/W t<10s, Note 5 2
Thermal Resistance, Junction to Ambient RJA 75 °C/W Steady state, Note 6 2
Thermal Resistance, Junction to Ambient RJA 40 °C/W t<10s, Note 6 2
Thermal Resistance, Junction to Case RJC 15 °C/W Note 6 2
Operating and Storage Temperature Range TJ, TSTG -55 150 °C 2
Drain-Source Breakdown Voltage BVDSS 30 V VGS = 0V, ID = 250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS = 30V, VGS = 0V 2
Gate-Source Leakage IGSS 100 nA VGS = 20V, VDS = 0V 2
Gate Threshold Voltage VGS(th) 0.8 1.2 1.6 V VDS = VGS, ID = 250μA 2
Static Drain-Source On-Resistance RDS(ON) 11 14 mΩ VGS = 10V, ID = 9A 2
Static Drain-Source On-Resistance RDS(ON) 14 20 mΩ VGS = 4.5V, ID = 7A 2
Diode Forward Voltage VSD 0.72 0.94 V VGS = 0V, IS = 1A 2

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
contacts Copper tin  Terminals Connections: See Diagram  Terminals: Finish - Matte Tin annealed over Copper lead frame. 1

CAD (KiCad official)

  • Symbol: DMN4800LSS-13
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SO-8 (KiCad packages3D, STEP)
  • 3D model files: dmn4800lss-13-etched.step / dmn4800lss-13-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); dmn4800lss-13.step / dmn4800lss-13.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (6 pp, sha256 02fc8bd4320ed764, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF