# DMN3016lss-13

**Diodes Incorporated** · MOSFETs · SO-8

DMN3016lss-13 from Diodes Incorporated, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the 30V N-channel MOSFET; pin mapping inferred from the scrambled pin-configuration text on page 1. |
| 2 | S | passive | Source terminal of the 30V N-channel MOSFET; pin mapping inferred from the scrambled pin-configuration text on page 1. |
| 3 | S | passive | Source terminal of the 30V N-channel MOSFET; pin mapping inferred from the scrambled pin-configuration text on page 1. |
| 4 | G | input | Gate terminal; gate-source voltage is rated at ±20V (VGSS) and the gate threshold is 1.3V to 2.5V at VDS = VGS, ID = 250µA. |
| 5 | D | passive | Drain terminal; drain-source voltage is rated at 30V (VDSS) and the device is also tied to the exposed drain pad on this package. |
| 6 | D | passive | Drain terminal; drain-source voltage is rated at 30V (VDSS) and continuous drain current is 10.3A at TA = +25°C with VGS = 10V (steady state). |
| 7 | D | passive | Drain terminal; drain-source voltage is rated at 30V (VDSS) and continuous drain current is 10.3A at TA = +25°C with VGS = 10V (steady state). |
| 8 | D | passive | Drain terminal; drain-source voltage is rated at 30V (VDSS) and continuous drain current is 10.3A at TA = +25°C with VGS = 10V (steady state). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | SO-8 |
| Category | Transistors |
| Pins | 8 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS |  |  | 30 | V |  | 2 |
| Gate-Source Voltage | VGSS | -20 |  | 20 | V |  | 2 |
| Continuous Drain Current (Note 6) | ID |  |  | 10.3 | A | VGS = 10V, steady state, TA = +25°C | 2 |
| Continuous Drain Current (Note 6) | ID |  |  | 8.3 | A | VGS = 10V, steady state, TA = +70°C | 2 |
| Continuous Drain Current (Note 6) | ID |  |  | 13.4 | A | VGS = 10V, t<10s, TA = +25°C | 2 |
| Continuous Drain Current (Note 6) | ID |  |  | 10.6 | A | VGS = 10V, t<10s, TA = +70°C | 2 |
| Continuous Drain Current (Note 6) | ID |  |  | 9.3 | A | VGS = 4.5V, steady state, TA = +25°C | 2 |
| Continuous Drain Current (Note 6) | ID |  |  | 7.3 | A | VGS = 4.5V, steady state, TA = +70°C | 2 |
| Continuous Drain Current (Note 6) | ID |  |  | 12 | A | VGS = 4.5V, t<10s, TA = +25°C | 2 |
| Continuous Drain Current (Note 6) | ID |  |  | 9.5 | A | VGS = 4.5V, t<10s, TA = +70°C | 2 |
| Maximum Continuous Body Diode Forward Current (Note 6) | IS |  |  | 2.5 | A |  | 2 |
| Pulsed Drain Current | IDM |  |  | 80 | A | 10µs pulse, duty cycle = 1% | 2 |
| Avalanche Current (Note 7) | IAS |  |  | 22 | A | L = 0.1mH | 2 |
| Avalanche Energy (Note 7) | EAS |  |  | 25 | mJ | L = 0.1mH | 2 |
| Total Power Dissipation (Note 5) | PD |  |  | 1.5 | W | Note 5 | 2 |
| Total Power Dissipation (Note 6) | PD |  |  | 2 | W | Note 6 | 2 |
| Thermal Resistance, Junction to Ambient (Note 5) Steady State | RθJA |  |  | 82 | °C/W | Steady state, Note 5 | 2 |
| Thermal Resistance, Junction to Ambient (Note 5) t<10s | RθJA |  |  | 48 | °C/W | t<10s, Note 5 | 2 |
| Thermal Resistance, Junction to Ambient (Note 6) Steady State | RθJA |  |  | 60 | °C/W | Steady state, Note 6 | 2 |
| Thermal Resistance, Junction to Ambient (Note 6) t<10s | RθJA |  |  | 37 | °C/W | t<10s, Note 6 | 2 |
| Thermal Resistance, Junction to Case | RθJC |  |  | 6.4 | °C/W |  | 2 |
| Operating and Storage Temperature Range | TJ, TSTG | -55 |  | 150 | °C |  | 2 |
| Drain-Source Breakdown Voltage | BVDSS | 30 |  |  | V | VGS = 0V, ID = 250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | μA | VDS = 30V, VGS = 0V | 2 |
| Gate-Source Leakage | IGSS | -100 |  | 100 | nA | VGS = ±20V, VDS = 0V | 2 |
| Gate Threshold Voltage | VGS(th) | 1.3 |  | 2.5 | V | VDS = VGS, ID = 250μA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 8 | 12 | mΩ | VGS = 10V, ID = 12A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 12 | 16 | mΩ | VGS = 4.5V, ID = 10A | 2 |
| Diode Forward Voltage | VSD |  | 0.7 | 1 | V | VGS = 0V, IS = 1A | 2 |
| Gate resistance | Rg |  | 2.6 | 3.2 | Ω | VDS = 0V, VGS = 0V, f = 1.0MHz | 2 |

## Materials and finish

As the datasheet states them (page.json `metadata.appearance`; the 3D model's colours follow it).

| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | Copper | tin | • Terminal Connections Indicator: See diagram • Terminals: Finish  Matte Tin annealed over Copper leadframe. | 1 |

## CAD (KiCad official)

- Symbol: `DMN3016lss-13`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files: `dmn3016lss-13-etched.step` / `dmn3016lss-13-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `dmn3016lss-13.step` / `dmn3016lss-13.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Diodes Incorporated datasheet](https://www.diodes.com/assets/Datasheets/DMN3016lss-13.pdf) (6 pp, sha256 `4d3f92c9b0f09267`, retrieved 2026-10-21, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/dmn3016lss-13-datasheet.pdf)