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DMN3016lss-13

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Diodes Incorporated MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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DMN3016lss-13

Diodes Incorporated · MOSFETs · SO-8

DMN3016lss-13 from Diodes Incorporated, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source terminal of the 30V N-channel MOSFET; pin mapping inferred from the scrambled pin-configuration text on page 1.
2 S passive Source terminal of the 30V N-channel MOSFET; pin mapping inferred from the scrambled pin-configuration text on page 1.
3 S passive Source terminal of the 30V N-channel MOSFET; pin mapping inferred from the scrambled pin-configuration text on page 1.
4 G input Gate terminal; gate-source voltage is rated at ±20V (VGSS) and the gate threshold is 1.3V to 2.5V at VDS = VGS, ID = 250µA.
5 D passive Drain terminal; drain-source voltage is rated at 30V (VDSS) and the device is also tied to the exposed drain pad on this package.
6 D passive Drain terminal; drain-source voltage is rated at 30V (VDSS) and continuous drain current is 10.3A at TA = +25°C with VGS = 10V (steady state).
7 D passive Drain terminal; drain-source voltage is rated at 30V (VDSS) and continuous drain current is 10.3A at TA = +25°C with VGS = 10V (steady state).
8 D passive Drain terminal; drain-source voltage is rated at 30V (VDSS) and continuous drain current is 10.3A at TA = +25°C with VGS = 10V (steady state).

Key specifications

Parameter Value
Manufacturer Diodes Incorporated
Package SO-8
Category Transistors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS 30 V 2
Gate-Source Voltage VGSS -20 20 V 2
Continuous Drain Current (Note 6) ID 10.3 A VGS = 10V, steady state, TA = +25°C 2
Continuous Drain Current (Note 6) ID 8.3 A VGS = 10V, steady state, TA = +70°C 2
Continuous Drain Current (Note 6) ID 13.4 A VGS = 10V, t<10s, TA = +25°C 2
Continuous Drain Current (Note 6) ID 10.6 A VGS = 10V, t<10s, TA = +70°C 2
Continuous Drain Current (Note 6) ID 9.3 A VGS = 4.5V, steady state, TA = +25°C 2
Continuous Drain Current (Note 6) ID 7.3 A VGS = 4.5V, steady state, TA = +70°C 2
Continuous Drain Current (Note 6) ID 12 A VGS = 4.5V, t<10s, TA = +25°C 2
Continuous Drain Current (Note 6) ID 9.5 A VGS = 4.5V, t<10s, TA = +70°C 2
Maximum Continuous Body Diode Forward Current (Note 6) IS 2.5 A 2
Pulsed Drain Current IDM 80 A 10µs pulse, duty cycle = 1% 2
Avalanche Current (Note 7) IAS 22 A L = 0.1mH 2
Avalanche Energy (Note 7) EAS 25 mJ L = 0.1mH 2
Total Power Dissipation (Note 5) PD 1.5 W Note 5 2
Total Power Dissipation (Note 6) PD 2 W Note 6 2
Thermal Resistance, Junction to Ambient (Note 5) Steady State RθJA 82 °C/W Steady state, Note 5 2
Thermal Resistance, Junction to Ambient (Note 5) t<10s RθJA 48 °C/W t<10s, Note 5 2
Thermal Resistance, Junction to Ambient (Note 6) Steady State RθJA 60 °C/W Steady state, Note 6 2
Thermal Resistance, Junction to Ambient (Note 6) t<10s RθJA 37 °C/W t<10s, Note 6 2
Thermal Resistance, Junction to Case RθJC 6.4 °C/W 2
Operating and Storage Temperature Range TJ, TSTG -55 150 °C 2
Drain-Source Breakdown Voltage BVDSS 30 V VGS = 0V, ID = 250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS = 30V, VGS = 0V 2
Gate-Source Leakage IGSS -100 100 nA VGS = ±20V, VDS = 0V 2
Gate Threshold Voltage VGS(th) 1.3 2.5 V VDS = VGS, ID = 250μA 2
Static Drain-Source On-Resistance RDS(ON) 8 12 mΩ VGS = 10V, ID = 12A 2
Static Drain-Source On-Resistance RDS(ON) 12 16 mΩ VGS = 4.5V, ID = 10A 2
Diode Forward Voltage VSD 0.7 1 V VGS = 0V, IS = 1A 2
Gate resistance Rg 2.6 3.2 Ω VDS = 0V, VGS = 0V, f = 1.0MHz 2

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
contacts Copper tin • Terminal Connections Indicator: See diagram • Terminals: Finish  Matte Tin annealed over Copper leadframe. 1

CAD (KiCad official)

  • Symbol: DMN3016lss-13
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SO-8 (KiCad packages3D, STEP)
  • 3D model files: dmn3016lss-13-etched.step / dmn3016lss-13-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); dmn3016lss-13.step / dmn3016lss-13.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (6 pp, sha256 4d3f92c9b0f09267, retrieved 2026-10-21, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF