# DMN2058U-HXY

**HXY MOSFET** · MOSFETs · SOT-23

DMN2058U-HXY from HXY MOSFET, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limit is ±12 V, with operation at gate voltages as low as 2.5 V and threshold of 0.5 to 1.0 V at 250 µA. |
| 2 | D | passive | Drain; drain-source voltage rated 20 V with 6 A continuous and 25 A pulsed drain current. |
| 3 | S | passive | Source; connected to the source terminal of the N-channel MOSFET, body diode forward voltage 0.75 V typ (1 V max) at IS = 1 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOT-23 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | 20 | V | TA=25℃ | 1 |
| Gate-Source Voltage | VGS | -12 |  | 12 | V | TA=25℃ | 1 |
| Drain Current-Continuous | ID |  |  | 6 | A | TA=25℃ | 1 |
| Drain Current-Pulsed | IDM |  |  | 25 | A | TA=25℃, Note 1 | 1 |
| Maximum Power Dissipation | PD |  |  | 0.35 | W | TA=25℃ | 1 |
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 |  | 150 | ℃ |  | 1 |
| Thermal Resistance, Junction-to-Ambient | RθJA |  |  | 100 | ℃/W | Note 2 | 1 |
| Drain-source breakdown voltage | V(BR)DSS | 20 |  |  | V | VGS = 0V, ID =250µA | 2 |
| Gate-source leakage current | IGSS | -100 |  | 100 | nA | VDS =0V, VGS =±12V | 2 |
| Zero gate voltage drain current | IDSS |  |  | 1 | µA | VDS =16V, VGS =0V | 2 |
| Gate threshold voltage | VGS(th) | 0.5 | 0.7 | 1 | V | VDS =VGS, ID =250µA | 2 |
| Drain-source on-state resistance | RDS(on) |  | 22 | 27 | mΩ | VGS =4.5V, ID =5.0A | 2 |
| Drain-source on-state resistance | RDS(on) |  |  | 35 | mΩ | VGS =2.5V, ID =4.0A | 2 |
| Drain-source on-state resistance | RDS(on) |  |  | 73 | mΩ | VGS =1.8V, ID =2.0A | 2 |
| Diode forward voltage | VSD |  | 0.75 | 1 | V | VGS =0V, IS=1A | 2 |
| Forward transconductance | gfS |  | 4 |  | S | VDS =5V, ID =3.8A | 2 |
| Input capacitance | Ciss |  | 630 |  | pF | VDS =10V, VGS =0V, f =1MHz | 2 |
| Gate resistance | Rg |  | 1.5 |  | Ω | VDS =0V, VGS =0V, f =1MHz | 2 |
| Turn-on delay time | td(on) |  | 5.5 |  | ns | VGS=5V, VDS=10V, RL=1.7Ω, RGEN=6Ω | 2 |
| Rise time | tr |  | 14 |  | ns | VGS=5V, VDS=10V, RL=1.7Ω, RGEN=6Ω | 2 |

## CAD (KiCad official)

- Symbol: `DMN2058U-HXY`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `dmn2058u-hxy-etched.step` / `dmn2058u-hxy-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `dmn2058u-hxy.step` / `dmn2058u-hxy.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [HXY MOSFET datasheet](docs/dmn2058u-hxy-datasheet.pdf) (5 pp, sha256 `d4de25ada121504f`, retrieved 2026-10-23, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/dmn2058u-hxy-datasheet.pdf)