component
DMN2058U-HXY
Public Made by Adomby adom
HXY MOSFET MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownDMN2058U-HXY
HXY MOSFET · MOSFETs · SOT-23
DMN2058U-HXY from HXY MOSFET, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limit is ±12 V, with operation at gate voltages as low as 2.5 V and threshold of 0.5 to 1.0 V at 250 µA. |
| 2 | D | passive | Drain; drain-source voltage rated 20 V with 6 A continuous and 25 A pulsed drain current. |
| 3 | S | passive | Source; connected to the source terminal of the N-channel MOSFET, body diode forward voltage 0.75 V typ (1 V max) at IS = 1 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOT-23 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 20 | V | TA=25℃ | 1 | ||
| Gate-Source Voltage | VGS | -12 | 12 | V | TA=25℃ | 1 | |
| Drain Current-Continuous | ID | 6 | A | TA=25℃ | 1 | ||
| Drain Current-Pulsed | IDM | 25 | A | TA=25℃, Note 1 | 1 | ||
| Maximum Power Dissipation | PD | 0.35 | W | TA=25℃ | 1 | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance, Junction-to-Ambient | RθJA | 100 | ℃/W | Note 2 | 1 | ||
| Drain-source breakdown voltage | V(BR)DSS | 20 | V | VGS = 0V, ID =250µA | 2 | ||
| Gate-source leakage current | IGSS | -100 | 100 | nA | VDS =0V, VGS =±12V | 2 | |
| Zero gate voltage drain current | IDSS | 1 | µA | VDS =16V, VGS =0V | 2 | ||
| Gate threshold voltage | VGS(th) | 0.5 | 0.7 | 1 | V | VDS =VGS, ID =250µA | 2 |
| Drain-source on-state resistance | RDS(on) | 22 | 27 | mΩ | VGS =4.5V, ID =5.0A | 2 | |
| Drain-source on-state resistance | RDS(on) | 35 | mΩ | VGS =2.5V, ID =4.0A | 2 | ||
| Drain-source on-state resistance | RDS(on) | 73 | mΩ | VGS =1.8V, ID =2.0A | 2 | ||
| Diode forward voltage | VSD | 0.75 | 1 | V | VGS =0V, IS=1A | 2 | |
| Forward transconductance | gfS | 4 | S | VDS =5V, ID =3.8A | 2 | ||
| Input capacitance | Ciss | 630 | pF | VDS =10V, VGS =0V, f =1MHz | 2 | ||
| Gate resistance | Rg | 1.5 | Ω | VDS =0V, VGS =0V, f =1MHz | 2 | ||
| Turn-on delay time | td(on) | 5.5 | ns | VGS=5V, VDS=10V, RL=1.7Ω, RGEN=6Ω | 2 | ||
| Rise time | tr | 14 | ns | VGS=5V, VDS=10V, RL=1.7Ω, RGEN=6Ω | 2 |
CAD (KiCad official)
- Symbol:
DMN2058U-HXY - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
dmn2058u-hxy-etched.step/dmn2058u-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);dmn2058u-hxy.step/dmn2058u-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (5 pp, sha256
d4de25ada121504f, retrieved 2026-10-23, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).