component
DMN2005K-7
Public Made by Adomby adom
Diodes Incorporated MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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dmn2005k-7: specified limits as data (metadata.characteristics, 15 rows from the datasheet)
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DMN2005K-7
Diodes Incorporated · MOSFETs · SOT-23
DMN2005K-7 from Diodes Incorporated, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate control terminal of N-channel MOSFET with ESD protection; gate threshold voltage minimum 0.53V and maximum 0.9V at VDS=VGS and ID=100µA, maximum gate-source leakage 5µA at VGS=8V. |
| 2 | Source | passive | Source terminal of N-channel MOSFET with integrated body diode cathode connection; body diode forward voltage minimum 0.7V and maximum 1.4V at IS=200mA with VGS=0V. |
| 3 | Drain | output | Drain terminal of N-channel MOSFET; maximum drain-source voltage rating 20V, maximum continuous drain current 300mA at TA=+25°C, drain-source on-resistance typical 0.55Ω at VGS=1.8V and ID=200mA. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 20 | V | 2 | |||
| Gate-Source Voltage | VGSS | 10 | V | 2 | |||
| Drain Current Continuous | ID | 300 | mA | Continuous (Note 5) | 2 | ||
| Drain Current Pulsed | ID | 600 | mA | Pulsed (Note 6) | 2 | ||
| Drain-Source Breakdown Voltage | BVDSS | 20 | V | VGS = 0V, ID = 100µA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 10 | µA | VDS = 17V, VGS = 0V | 2 | ||
| Gate-Source Leakage | IGSS | 5 | µA | VGS = 8V, VDS = 0V | 2 | ||
| Gate Threshold Voltage | VGS(TH) | 0.53 | 0.9 | V | VDS = VGS, ID = 100µA | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 0.55 | 3.5 | Ω | VGS = 1.8V, ID = 200mA | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 1.7 | Ω | VGS = 2.7V, ID = 200mA | 2 | ||
| Forward Transfer Admittance | Yfs | 40 | mS | VDS = 3V, ID = 10mA | 2 | ||
| Diode Forward Voltage | VSD | 0.7 | 1.4 | V | VGS = 0V, IS = 200mA | 2 | |
| Total Power Dissipation | PD | 350 | mW | Device mounted on FR-4 PCB (Note 5) | 2 | ||
| Thermal Resistance, Junction to Ambient | RθJA | 357 | °C/W | 2 | |||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 2 |
CAD (KiCad official)
- Symbol:
DMN2005K-7 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
dmn2005k-7-etched.step/dmn2005k-7-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);dmn2005k-7.step/dmn2005k-7.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Diodes Incorporated datasheet (6 pp, sha256
05131105f74bca36, retrieved 2026-09-23, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.2, primaryclaude-haiku-4-5-20251001(text), consensusclaude-sonnet-4-6(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# DMN2005K-7
**Diodes Incorporated** · MOSFETs · SOT-23
DMN2005K-7 from Diodes Incorporated, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate control terminal of N-channel MOSFET with ESD protection; gate threshold voltage minimum 0.53V and maximum 0.9V at VDS=VGS and ID=100µA, maximum gate-source leakage 5µA at VGS=8V. |
| 2 | Source | passive | Source terminal of N-channel MOSFET with integrated body diode cathode connection; body diode forward voltage minimum 0.7V and maximum 1.4V at IS=200mA with VGS=0V. |
| 3 | Drain | output | Drain terminal of N-channel MOSFET; maximum drain-source voltage rating 20V, maximum continuous drain current 300mA at TA=+25°C, drain-source on-resistance typical 0.55Ω at VGS=1.8V and ID=200mA. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | | | 20 | V | | 2 |
| Gate-Source Voltage | VGSS | | | 10 | V | | 2 |
| Drain Current Continuous | ID | | | 300 | mA | Continuous (Note 5) | 2 |
| Drain Current Pulsed | ID | | | 600 | mA | Pulsed (Note 6) | 2 |
| Drain-Source Breakdown Voltage | BVDSS | 20 | | | V | VGS = 0V, ID = 100µA | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 10 | µA | VDS = 17V, VGS = 0V | 2 |
| Gate-Source Leakage | IGSS | | | 5 | µA | VGS = 8V, VDS = 0V | 2 |
| Gate Threshold Voltage | VGS(TH) | 0.53 | | 0.9 | V | VDS = VGS, ID = 100µA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 0.55 | 3.5 | Ω | VGS = 1.8V, ID = 200mA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | | 1.7 | Ω | VGS = 2.7V, ID = 200mA | 2 |
| Forward Transfer Admittance | Yfs | 40 | | | mS | VDS = 3V, ID = 10mA | 2 |
| Diode Forward Voltage | VSD | | 0.7 | 1.4 | V | VGS = 0V, IS = 200mA | 2 |
| Total Power Dissipation | PD | | | 350 | mW | Device mounted on FR-4 PCB (Note 5) | 2 |
| Thermal Resistance, Junction to Ambient | RθJA | | 357 | | °C/W | | 2 |
| Operating and Storage Temperature Range | TJ, TSTG | -55 | | 150 | °C | | 2 |
## CAD (KiCad official)
- Symbol: `DMN2005K-7`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `dmn2005k-7-etched.step` / `dmn2005k-7-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `dmn2005k-7.step` / `dmn2005k-7.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Diodes Incorporated datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588884180537118720) (6 pp, sha256 `05131105f74bca36`, retrieved 2026-09-23, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.2`, primary `claude-haiku-4-5-20251001` (text), consensus `claude-sonnet-4-6` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/dmn2005k-7-datasheet.pdf)