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docs dmn2005k-7: re-etch, flat white mark read from pin 1 (service-occt 1.4.0) + chip hero · Ray
viewers dmn2005k-7: viewers · Ray
dmn2005k-7-etched.fit.json dmn2005k-7: re-etch, flat white mark read from pin 1 (service-occt 1.4.0) + chip hero · Ray
dmn2005k-7-etched.glb dmn2005k-7: re-etch, flat white mark read from pin 1 (service-occt 1.4.0) + chip hero · Ray
dmn2005k-7-etched.step dmn2005k-7: re-etch, flat white mark read from pin 1 (service-occt 1.4.0) + chip hero · Ray
dmn2005k-7.glb Publish 0.1.0 · Ray
dmn2005k-7.kicad_mod Publish 0.1.0 · Ray
dmn2005k-7.kicad_sym Publish 0.1.0 · Ray
dmn2005k-7.lbr Publish 0.1.0 · Ray
dmn2005k-7.step Publish 0.1.0 · Ray
package.json dmn2005k-7: component.models_3d pose record per STEP (Z-up, seated z=0, pad-centre origin, identity binding) · Ray
page.json dmn2005k-7: specified limits as data (metadata.characteristics, 15 rows from the datasheet) · Ray
README.md dmn2005k-7: specified limits as data (metadata.characteristics, 15 rows from the datasheet) · Ray

DMN2005K-7

Diodes Incorporated · MOSFETs · SOT-23

DMN2005K-7 from Diodes Incorporated, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate control terminal of N-channel MOSFET with ESD protection; gate threshold voltage minimum 0.53V and maximum 0.9V at VDS=VGS and ID=100µA, maximum gate-source leakage 5µA at VGS=8V.
2 Source passive Source terminal of N-channel MOSFET with integrated body diode cathode connection; body diode forward voltage minimum 0.7V and maximum 1.4V at IS=200mA with VGS=0V.
3 Drain output Drain terminal of N-channel MOSFET; maximum drain-source voltage rating 20V, maximum continuous drain current 300mA at TA=+25°C, drain-source on-resistance typical 0.55Ω at VGS=1.8V and ID=200mA.

Key specifications

Parameter Value
Manufacturer Diodes Incorporated
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS 20 V 2
Gate-Source Voltage VGSS 10 V 2
Drain Current Continuous ID 300 mA Continuous (Note 5) 2
Drain Current Pulsed ID 600 mA Pulsed (Note 6) 2
Drain-Source Breakdown Voltage BVDSS 20 V VGS = 0V, ID = 100µA 2
Zero Gate Voltage Drain Current IDSS 10 µA VDS = 17V, VGS = 0V 2
Gate-Source Leakage IGSS 5 µA VGS = 8V, VDS = 0V 2
Gate Threshold Voltage VGS(TH) 0.53 0.9 V VDS = VGS, ID = 100µA 2
Static Drain-Source On-Resistance RDS(ON) 0.55 3.5 Ω VGS = 1.8V, ID = 200mA 2
Static Drain-Source On-Resistance RDS(ON) 1.7 Ω VGS = 2.7V, ID = 200mA 2
Forward Transfer Admittance Yfs 40 mS VDS = 3V, ID = 10mA 2
Diode Forward Voltage VSD 0.7 1.4 V VGS = 0V, IS = 200mA 2
Total Power Dissipation PD 350 mW Device mounted on FR-4 PCB (Note 5) 2
Thermal Resistance, Junction to Ambient RθJA 357 °C/W 2
Operating and Storage Temperature Range TJ, TSTG -55 150 °C 2

CAD (KiCad official)

  • Symbol: DMN2005K-7
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: dmn2005k-7-etched.step / dmn2005k-7-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); dmn2005k-7.step / dmn2005k-7.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (6 pp, sha256 05131105f74bca36, retrieved 2026-09-23, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.2, primary claude-haiku-4-5-20251001 (text), consensus claude-sonnet-4-6 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF