main
Download ZIP Propose a change
Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 17d ago
viewers dmn1019uvt-7: viewers · Ray 17d ago
dmn1019uvt-7-etched.glb Publish 0.1.0 · Ray 17d ago
dmn1019uvt-7-etched.step dmn1019uvt-7: factory component page (tier=lcsc) · Ray 17d ago
dmn1019uvt-7-hero.glb dmn1019uvt-7: hero GLB from the etched model (keeps the MPN mark) · Ray 17d ago
dmn1019uvt-7-hero.overlay.json Publish 0.1.0 · Ray 17d ago
dmn1019uvt-7.glb Publish 0.1.0 · Ray 17d ago
dmn1019uvt-7.kicad_mod Publish 0.1.0 · Ray 17d ago
dmn1019uvt-7.kicad_sym Publish 0.1.0 · Ray 17d ago
dmn1019uvt-7.lbr Publish 0.1.0 · Ray 17d ago
dmn1019uvt-7.step Publish 0.1.0 · Ray 17d ago
package.json Publish 0.1.0 · Ray 17d ago
page.json Set visibility: public · Ray 17d ago
README.md Publish 0.1.0 · Ray 17d ago

DMN1019UVT-7

Diodes Incorporated · MOSFETs · TSOT-26

DMN1019UVT-7 from Diodes Incorporated, in a TSOT-26. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 D passive Drain terminal of the 12V N-channel MOSFET, rated for VDSS 12 V with continuous drain current of 10.7 A at TA = +25°C (steady state).
2 D passive Drain terminal of the 12V N-channel MOSFET, rated for VDSS 12 V with continuous drain current of 10.7 A at TA = +25°C (steady state).
3 G input Gate terminal with an integrated ESD protection diode; gate-source voltage is rated VGSS ±8 V.
4 S passive Source terminal of the MOSFET; the body diode maximum forward current is IS = 2 A.
5 D passive Drain terminal of the 12V N-channel MOSFET, rated for VDSS 12 V with continuous drain current of 10.7 A at TA = +25°C (steady state).
6 D passive Drain terminal of the 12V N-channel MOSFET, rated for VDSS 12 V with continuous drain current of 10.7 A at TA = +25°C (steady state).

Key specifications

Parameter Value
Manufacturer Diodes Incorporated
Package TSOT-26
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS 12 V 2
Gate-Source Voltage VGSS -8 8 V 2
Continuous Drain Current, steady state ID 10.7 A VGS = 4.5V, TA = +25°C 2
Continuous Drain Current, steady state ID 8.6 A VGS = 4.5V, TA = +70°C 2
Continuous Drain Current, t<10s ID 12.7 A VGS = 4.5V, t<10s, TA = +25°C 2
Continuous Drain Current, t<10s ID 10.1 A VGS = 4.5V, t<10s, TA = +70°C 2
Pulsed Drain Current IDM 70 A 10µs Pulse, Duty Cycle = 1% 2
Maximum Body Diode Forward Current IS 2 A 2
Avalanche Current IAS 9.7 A L = 0.1mH 2
Avalanche Energy EAS 4.7 mJ L = 0.1mH 2
Total Power Dissipation PD 1.73 W TA = +25°C 2
Total Power Dissipation PD 1.11 W TA = +70°C 2
Thermal Resistance, Junction to Ambient, steady state RθJA 72.2 °C/W Steady State 2
Thermal Resistance, Junction to Ambient, t<10s RθJA 37.5 °C/W t<10s 2
Thermal Resistance, Junction to Case RθJC 14.4 °C/W 2
Operating and Storage Temperature Range TJ, TSTG -55 150 °C 2
Drain-Source Breakdown Voltage BVDSS 12 V VGS = 0V, ID = 250µA 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS = 12V, VGS = 0V 2
Gate-Body Leakage IGSS -2 2 µA VGS = ±8V, VDS = 0V 2
Gate Threshold Voltage VGS(TH) 0.35 0.53 0.8 V VDS = VGS, ID = 250µA 2
Static Drain-Source On-Resistance RDS(ON) 7 10 mΩ VGS = 4.5V, ID = 9.7A 2
Static Drain-Source On-Resistance RDS(ON) 8 12 mΩ VGS = 2.5V, ID = 9A 2
Static Drain-Source On-Resistance RDS(ON) 10 14 mΩ VGS = 1.8V, ID = 8.1A 2
Static Drain-Source On-Resistance RDS(ON) 14 18 mΩ VGS = 1.5V, ID = 4.5A 2
Static Drain-Source On-Resistance RDS(ON) 28 41 mΩ VGS = 1.2V, ID = 2.4A 2
Diode Forward Voltage VSD 0.8 1.2 V VGS = 0V, IS = 10A 2

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
housing PC Body Diode Reverse Recovery Charge Qrr, 4.5, nC IF = 10A, di/dt = 100A/μs Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad. 2
contacts tin  Terminals: Finish - Matte Tin Solderable per MIL-STD-202, Method 208 1

CAD (KiCad official)

  • Symbol: DMN1019UVT-7
  • Footprint: Package_TO_SOT_SMD:TSOT-23-6
  • 3D model: TSOT-26 (KiCad packages3D, STEP)
  • 3D model files: dmn1019uvt-7-etched.step / dmn1019uvt-7-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); dmn1019uvt-7.step / dmn1019uvt-7.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (7 pp, sha256 1a464b3e9da6062c, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF