component
DMN1019UVT-7
Public Made by Adomby adom
Diodes Incorporated MOSFETs, TSOT-26. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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Contents
README
markdownDMN1019UVT-7
Diodes Incorporated · MOSFETs · TSOT-26
DMN1019UVT-7 from Diodes Incorporated, in a TSOT-26. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | D | passive | Drain terminal of the 12V N-channel MOSFET, rated for VDSS 12 V with continuous drain current of 10.7 A at TA = +25°C (steady state). |
| 2 | D | passive | Drain terminal of the 12V N-channel MOSFET, rated for VDSS 12 V with continuous drain current of 10.7 A at TA = +25°C (steady state). |
| 3 | G | input | Gate terminal with an integrated ESD protection diode; gate-source voltage is rated VGSS ±8 V. |
| 4 | S | passive | Source terminal of the MOSFET; the body diode maximum forward current is IS = 2 A. |
| 5 | D | passive | Drain terminal of the 12V N-channel MOSFET, rated for VDSS 12 V with continuous drain current of 10.7 A at TA = +25°C (steady state). |
| 6 | D | passive | Drain terminal of the 12V N-channel MOSFET, rated for VDSS 12 V with continuous drain current of 10.7 A at TA = +25°C (steady state). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | TSOT-26 |
| Category | Transistors/Thyristors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 12 | V | 2 | |||
| Gate-Source Voltage | VGSS | -8 | 8 | V | 2 | ||
| Continuous Drain Current, steady state | ID | 10.7 | A | VGS = 4.5V, TA = +25°C | 2 | ||
| Continuous Drain Current, steady state | ID | 8.6 | A | VGS = 4.5V, TA = +70°C | 2 | ||
| Continuous Drain Current, t<10s | ID | 12.7 | A | VGS = 4.5V, t<10s, TA = +25°C | 2 | ||
| Continuous Drain Current, t<10s | ID | 10.1 | A | VGS = 4.5V, t<10s, TA = +70°C | 2 | ||
| Pulsed Drain Current | IDM | 70 | A | 10µs Pulse, Duty Cycle = 1% | 2 | ||
| Maximum Body Diode Forward Current | IS | 2 | A | 2 | |||
| Avalanche Current | IAS | 9.7 | A | L = 0.1mH | 2 | ||
| Avalanche Energy | EAS | 4.7 | mJ | L = 0.1mH | 2 | ||
| Total Power Dissipation | PD | 1.73 | W | TA = +25°C | 2 | ||
| Total Power Dissipation | PD | 1.11 | W | TA = +70°C | 2 | ||
| Thermal Resistance, Junction to Ambient, steady state | RθJA | 72.2 | °C/W | Steady State | 2 | ||
| Thermal Resistance, Junction to Ambient, t<10s | RθJA | 37.5 | °C/W | t<10s | 2 | ||
| Thermal Resistance, Junction to Case | RθJC | 14.4 | °C/W | 2 | |||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 2 | ||
| Drain-Source Breakdown Voltage | BVDSS | 12 | V | VGS = 0V, ID = 250µA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS = 12V, VGS = 0V | 2 | ||
| Gate-Body Leakage | IGSS | -2 | 2 | µA | VGS = ±8V, VDS = 0V | 2 | |
| Gate Threshold Voltage | VGS(TH) | 0.35 | 0.53 | 0.8 | V | VDS = VGS, ID = 250µA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | 7 | 10 | mΩ | VGS = 4.5V, ID = 9.7A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 8 | 12 | mΩ | VGS = 2.5V, ID = 9A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 10 | 14 | mΩ | VGS = 1.8V, ID = 8.1A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 14 | 18 | mΩ | VGS = 1.5V, ID = 4.5A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 28 | 41 | mΩ | VGS = 1.2V, ID = 2.4A | 2 | |
| Diode Forward Voltage | VSD | 0.8 | 1.2 | V | VGS = 0V, IS = 10A | 2 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| housing | PC | Body Diode Reverse Recovery Charge Qrr, 4.5, nC IF = 10A, di/dt = 100A/μs Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad. | 2 | |
| contacts | tin | Terminals: Finish - Matte Tin Solderable per MIL-STD-202, Method 208 | 1 |
CAD (KiCad official)
- Symbol:
DMN1019UVT-7 - Footprint:
Package_TO_SOT_SMD:TSOT-23-6 - 3D model: TSOT-26 (KiCad packages3D, STEP)
- 3D model files:
dmn1019uvt-7-etched.step/dmn1019uvt-7-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);dmn1019uvt-7.step/dmn1019uvt-7.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Diodes Incorporated datasheet (7 pp, sha256
1a464b3e9da6062c, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).