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Ray Set visibility: public 8924dfc 7d ago
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{
  "schema_version": 1,
  "type": "component",
  "slug": "dmhc3025lsd-13",
  "title": "DMHC3025LSD-13",
  "brief": "Diodes Incorporated MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
  "version": "0.1.0",
  "license": "CC-BY-SA-4.0",
  "tags": [
    "component",
    "transistors-thyristors",
    "dmhc3025lsd-13",
    "factory-2.0.0",
    "extractor-text"
  ],
  "component": {
    "mpn": "DMHC3025LSD-13",
    "manufacturer": "Diodes Incorporated",
    "package": "SO-8",
    "pin_count": 8,
    "category": "Transistors/Thyristors",
    "subcategory": "MOSFETs",
    "datasheet": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588879940045037568",
    "parts": {
      "symbol": "dmhc3025lsd-13.kicad_sym",
      "footprint": "dmhc3025lsd-13.kicad_mod",
      "model_3d": "dmhc3025lsd-13-hero.glb",
      "model_3d_plain": "dmhc3025lsd-13-etched.glb",
      "model_3d_step": "dmhc3025lsd-13-etched.step",
      "model_3d_step_plain": "dmhc3025lsd-13.step",
      "lbr": "dmhc3025lsd-13.lbr"
    },
    "distributor_links": {
      "lcsc": "C156387"
    },
    "distributor_check": {
      "checked_at": "2026-10-18T16:28:20Z",
      "source": "Component Ocean /api/assign-pns",
      "digikey": {
        "pn": null,
        "status": "quota"
      },
      "mouser": {
        "pn": null,
        "status": "quota"
      }
    },
    "pins": [
      {
        "number": "1",
        "name": "N1G",
        "type": "input",
        "description": "Gate of N-channel MOSFET N1 (VGS(TH) 1 to 2 V, VGSS ±20 V max)."
      },
      {
        "number": "2",
        "name": "N1D/P1D",
        "type": "passive",
        "description": "Common drain of N-channel N1 and P-channel P1, the first half-bridge output (VDSS 30 V N-channel, -30 V P-channel)."
      },
      {
        "number": "3",
        "name": "N1S/N2S",
        "type": "passive",
        "description": "Common source of both N-channel MOSFETs N1 and N2, the low-side return of the H-bridge."
      },
      {
        "number": "4",
        "name": "N2G",
        "type": "input",
        "description": "Gate of N-channel MOSFET N2 (VGS(TH) 1 to 2 V, VGSS ±20 V max)."
      },
      {
        "number": "5",
        "name": "P2G",
        "type": "input",
        "description": "Gate of P-channel MOSFET P2 (VGS(TH) -1 to -2 V, VGSS ±20 V max)."
      },
      {
        "number": "6",
        "name": "N2D/P2D",
        "type": "passive",
        "description": "Common drain of N-channel N2 and P-channel P2, the second half-bridge output (VDSS 30 V N-channel, -30 V P-channel)."
      },
      {
        "number": "7",
        "name": "P1S/P2S",
        "type": "passive",
        "description": "Common source of both P-channel MOSFETs P1 and P2, the high-side supply node of the H-bridge."
      },
      {
        "number": "8",
        "name": "P1G",
        "type": "input",
        "description": "Gate of P-channel MOSFET P1 (VGS(TH) -1 to -2 V, VGSS ±20 V max)."
      }
    ],
    "provenance": {
      "extractor": "extract_pins 0.3",
      "factory_chain": {
        "factory": "2.0.0",
        "extractor": "extract_pins 0.3",
        "primary_model": "claude-haiku-5-5",
        "primary_mode": "text",
        "consensus_model": "claude-sonnet-5-5",
        "consensus": "agreed",
        "guards": "pin_guards 0.1: passed",
        "guard_notes": [
          "extractor flagged: The pin-number-to-name mapping was reconstructed from the garbled text extraction of the SO-8 'Pin C; Shared source/drain pins are types 'passive' as an assumption for an H-bridge MOSFET pair; the datas"
        ],
        "pages_sent": 9,
        "cost_usd": 0.1452,
        "at": "2026-10-18T16:25:59"
      },
      "datasheet": {
        "url": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588879940045037568",
        "pages": 9,
        "sha256": "26061431183de856",
        "source_tier": "lcsc"
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      "cad": "KiCad official (CC-BY-SA 4.0)",
      "pins": {
        "total": 8,
        "described": 8,
        "cites_pages": true,
        "refuses_to_fabricate": true
      }
    },
    "viewers": {
      "symbol": "viewers/symbol.html",
      "footprint": "viewers/footprint.html"
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    "models_3d": [
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        "up": "Z",
        "units": "mm",
        "origin": "footprint origin = pad-pattern centre",
        "seat": "z = 0",
        "extents_mm": [
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        "sha256": "07f46cff378d30e6c27dfd5a03092c795323f86d91c71fc7e743f4f418dc553a",
        "checked": "2026-10-18",
        "checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"
      },
      {
        "file": "dmhc3025lsd-13-etched.step",
        "role": "eda",
        "up": "Z",
        "units": "mm",
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        "checked": "2026-10-18",
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  "metadata": {
    "specs": {
      "Manufacturer": "Diodes Incorporated",
      "Package": "SO-8",
      "Category": "Transistors/Thyristors",
      "Pins": "8"
    },
    "appearance": {
      "contacts": {
        "quote": " Terminal Connections Indicator: See Diagram  Terminals: Finish  Matte Tin Annealed over Copper Leadframe.",
        "page": 1,
        "doc": "ds.pdf",
        "material": "Copper",
        "plating": "tin"
      },
      "version": 1,
      "datasheet_sha256": "26061431183de85657da80919e16f81395f3be2647ab11196068ded0b39fd48c"
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    "characteristics": {
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      "rows": [
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          "name": "Total Power Dissipation",
          "symbol": "PD",
          "kind": "thermal",
          "unit": "W",
          "min": null,
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          "max": 1.5,
          "conditions": "TA = +25°C; Note 5",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Thermal Resistance, Junction to Ambient, Steady State",
          "symbol": "RθJA",
          "kind": "thermal",
          "unit": "°C/W",
          "min": null,
          "typ": null,
          "max": 83,
          "conditions": "Steady state; Note 5",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Thermal Resistance, Junction to Ambient, t<10s",
          "symbol": "RθJA",
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          "max": 50,
          "conditions": "t < 10s; Note 5",
          "source_page": 2,
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        {
          "name": "Thermal Resistance, Junction to Case",
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          "name": "Operating and Storage Temperature Range",
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          "max": 150,
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        {
          "name": "Drain-Source Voltage (N-Channel)",
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          "conditions": "N-Channel, TA = +25°C",
          "source_page": 2,
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        {
          "name": "Gate-Source Voltage (N-Channel)",
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          "min": -20,
          "typ": null,
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          "conditions": "N-Channel, TA = +25°C",
          "source_page": 2,
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        {
          "name": "Continuous Drain Current (N-Channel)",
          "symbol": "ID",
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          "unit": "A",
          "min": null,
          "typ": null,
          "max": 6,
          "conditions": "VGS = 10V, steady state, TA = +25°C; Note 5",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Continuous Drain Current (N-Channel)",
          "symbol": "ID",
          "kind": "absolute_maximum",
          "unit": "A",
          "min": null,
          "typ": null,
          "max": 4.8,
          "conditions": "VGS = 10V, steady state, TA = +70°C; Note 5",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Continuous Drain Current (N-Channel)",
          "symbol": "ID",
          "kind": "absolute_maximum",
          "unit": "A",
          "min": null,
          "typ": null,
          "max": 7.8,
          "conditions": "VGS = 10V, t < 10s, TA = +25°C; Note 5",
          "source_page": 2,
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        {
          "name": "Continuous Drain Current (N-Channel)",
          "symbol": "ID",
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          "unit": "A",
          "min": null,
          "typ": null,
          "max": 6.1,
          "conditions": "VGS = 10V, t < 10s, TA = +70°C; Note 5",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Continuous Drain Current (N-Channel)",
          "symbol": "ID",
          "kind": "absolute_maximum",
          "unit": "A",
          "min": null,
          "typ": null,
          "max": 4.6,
          "conditions": "VGS = 4.5V, steady state, TA = +25°C; Note 5",
          "source_page": 2,
          "source": "datasheet"
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        {
          "name": "Continuous Drain Current (N-Channel)",
          "symbol": "ID",
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          "conditions": "VGS = 4.5V, steady state, TA = +70°C; Note 5",
          "source_page": 2,
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          "name": "Maximum Continuous Body Diode Forward Current (N-Channel)",
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        {
          "name": "Pulsed Drain Current (N-Channel)",
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          "kind": "absolute_maximum",
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          "min": null,
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          "max": 60,
          "conditions": "10μs pulse, duty cycle = 1%",
          "source_page": 2,
          "source": "datasheet"
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        {
          "name": "Drain-Source Voltage (P-Channel)",
          "symbol": "VDSS",
          "kind": "absolute_maximum",
          "unit": "V",
          "min": null,
          "typ": null,
          "max": 30,
          "conditions": "P-Channel, TA = +25°C; printed as 30 V",
          "source_page": 2,
          "source": "datasheet"
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        {
          "name": "Gate-Source Voltage (P-Channel)",
          "symbol": "VGSS",
          "kind": "absolute_maximum",
          "unit": "V",
          "min": -20,
          "typ": null,
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          "conditions": "P-Channel, TA = +25°C",
          "source_page": 2,
          "source": "datasheet"
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        {
          "name": "Continuous Drain Current (P-Channel)",
          "symbol": "ID",
          "kind": "absolute_maximum",
          "unit": "A",
          "min": -4.2,
          "typ": null,
          "max": null,
          "conditions": "VGS = -10V, steady state, TA = +25°C; Note 5",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Continuous Drain Current (P-Channel)",
          "symbol": "ID",
          "kind": "absolute_maximum",
          "unit": "A",
          "min": -3.3,
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          "conditions": "VGS = -10V, steady state, TA = +70°C; Note 5",
          "source_page": 2,
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        {
          "name": "Continuous Drain Current (P-Channel)",
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          "kind": "absolute_maximum",
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          "min": -5.4,
          "typ": null,
          "max": null,
          "conditions": "VGS = -10V, t < 10s, TA = +25°C; Note 5",
          "source_page": 2,
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          "name": "Continuous Drain Current (P-Channel)",
          "symbol": "ID",
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          "typ": null,
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          "conditions": "VGS = -10V, t < 10s, TA = +70°C; Note 5",
          "source_page": 2,
          "source": "datasheet"
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        {
          "name": "Continuous Drain Current (P-Channel)",
          "symbol": "ID",
          "kind": "absolute_maximum",
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          "min": -3.2,
          "typ": null,
          "max": null,
          "conditions": "VGS = -4.5V, steady state, TA = +25°C; Note 5",
          "source_page": 2,
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        {
          "name": "Continuous Drain Current (P-Channel)",
          "symbol": "ID",
          "kind": "absolute_maximum",
          "unit": "A",
          "min": -2.5,
          "typ": null,
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          "source_page": 2,
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          "name": "Maximum Continuous Body Diode Forward Current (P-Channel)",
          "symbol": "IS",
          "kind": "absolute_maximum",
          "unit": "A",
          "min": -2.5,
          "typ": null,
          "max": null,
          "conditions": "Note 5",
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        },
        {
          "name": "Pulsed Drain Current (P-Channel)",
          "symbol": "IDM",
          "kind": "absolute_maximum",
          "unit": "A",
          "min": -30,
          "typ": null,
          "max": null,
          "conditions": "10μs pulse, duty cycle = 1%",
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          "name": "Drain-Source Breakdown Voltage (N-Channel)",
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          "kind": "electrical",
          "unit": "V",
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          "typ": null,
          "max": null,
          "conditions": "VGS = 0V, ID = 250μA",
          "source_page": 3,
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        {
          "name": "Zero Gate Voltage Drain Current (N-Channel)",
          "symbol": "IDSS",
          "kind": "electrical",
          "unit": "μA",
          "min": null,
          "typ": null,
          "max": 0.5,
          "conditions": "VDS = 30V, VGS = 0V",
          "source_page": 3,
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        {
          "name": "Gate-Source Leakage (N-Channel)",
          "symbol": "IGSS",
          "kind": "electrical",
          "unit": "μA",
          "min": -1,
          "typ": null,
          "max": 1,
          "conditions": "VGS = ±20V, VDS = 0V",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Gate Threshold Voltage (N-Channel)",
          "symbol": "VGS(TH)",
          "kind": "electrical",
          "unit": "V",
          "min": 1,
          "typ": null,
          "max": 2,
          "conditions": "VDS = VGS, ID = 250μA",
          "source_page": 3,
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        },
        {
          "name": "Static Drain-Source On-Resistance (N-Channel)",
          "symbol": "RDS(ON)",
          "kind": "electrical",
          "unit": "mΩ",
          "min": null,
          "typ": 19,
          "max": 25,
          "conditions": "VGS = 10V, ID = 5A",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Static Drain-Source On-Resistance (N-Channel)",
          "symbol": "RDS(ON)",
          "kind": "electrical",
          "unit": "mΩ",
          "min": null,
          "typ": 26,
          "max": 40,
          "conditions": "VGS = 4.5V, ID = 4A",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Diode Forward Voltage (N-Channel)",
          "symbol": "VSD",
          "kind": "electrical",
          "unit": "V",
          "min": null,
          "typ": 0.7,
          "max": 1.2,
          "conditions": "VGS = 0V, IS = 1.7A",
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        },
        {
          "name": "Drain-Source Breakdown Voltage (P-Channel)",
          "symbol": "BVDSS",
          "kind": "electrical",
          "unit": "V",
          "min": -30,
          "typ": null,
          "max": null,
          "conditions": "VGS = 0V, ID = -250μA",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Zero Gate Voltage Drain Current (P-Channel)",
          "symbol": "IDSS",
          "kind": "electrical",
          "unit": "μA",
          "min": null,
          "typ": null,
          "max": -0.5,
          "conditions": "VDS = -30V, VGS = 0V",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Gate-Source Leakage (P-Channel)",
          "symbol": "IGSS",
          "kind": "electrical",
          "unit": "μA",
          "min": -1,
          "typ": null,
          "max": 1,
          "conditions": "VGS = ±20V, VDS = 0V",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Gate Threshold Voltage (P-Channel)",
          "symbol": "VGS(TH)",
          "kind": "electrical",
          "unit": "V",
          "min": -1,
          "typ": null,
          "max": -2,
          "conditions": "VDS = VGS, ID = -250μA",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Static Drain-Source On-Resistance (P-Channel)",
          "symbol": "RDS(ON)",
          "kind": "electrical",
          "unit": "mΩ",
          "min": null,
          "typ": 43,
          "max": 50,
          "conditions": "VGS = -10V, ID = -5A",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Static Drain-Source On-Resistance (P-Channel)",
          "symbol": "RDS(ON)",
          "kind": "electrical",
          "unit": "mΩ",
          "min": null,
          "typ": 68,
          "max": 80,
          "conditions": "VGS = -4.5V, ID = -4A",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Diode Forward Voltage (P-Channel)",
          "symbol": "VSD",
          "kind": "electrical",
          "unit": "V",
          "min": null,
          "typ": -0.7,
          "max": -1.2,
          "conditions": "VGS = 0V, IS = -1.7A",
          "source_page": 3,
          "source": "datasheet"
        }
      ]
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