component
DMHC3025LSD-13
Public Made by Adomby adom
Diodes Incorporated MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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DMHC3025LSD-13
Diodes Incorporated · MOSFETs · SO-8
DMHC3025LSD-13 from Diodes Incorporated, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | N1G | input | Gate of N-channel MOSFET N1 (VGS(TH) 1 to 2 V, VGSS ±20 V max). |
| 2 | N1D/P1D | passive | Common drain of N-channel N1 and P-channel P1, the first half-bridge output (VDSS 30 V N-channel, -30 V P-channel). |
| 3 | N1S/N2S | passive | Common source of both N-channel MOSFETs N1 and N2, the low-side return of the H-bridge. |
| 4 | N2G | input | Gate of N-channel MOSFET N2 (VGS(TH) 1 to 2 V, VGSS ±20 V max). |
| 5 | P2G | input | Gate of P-channel MOSFET P2 (VGS(TH) -1 to -2 V, VGSS ±20 V max). |
| 6 | N2D/P2D | passive | Common drain of N-channel N2 and P-channel P2, the second half-bridge output (VDSS 30 V N-channel, -30 V P-channel). |
| 7 | P1S/P2S | passive | Common source of both P-channel MOSFETs P1 and P2, the high-side supply node of the H-bridge. |
| 8 | P1G | input | Gate of P-channel MOSFET P1 (VGS(TH) -1 to -2 V, VGSS ±20 V max). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | SO-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Total Power Dissipation | PD | 1.5 | W | TA = +25°C; Note 5 | 2 | ||
| Thermal Resistance, Junction to Ambient, Steady State | RθJA | 83 | °C/W | Steady state; Note 5 | 2 | ||
| Thermal Resistance, Junction to Ambient, t<10s | RθJA | 50 | °C/W | t < 10s; Note 5 | 2 | ||
| Thermal Resistance, Junction to Case | RθJC | 14.5 | °C/W | 2 | |||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 2 | ||
| Drain-Source Voltage (N-Channel) | VDSS | 30 | V | N-Channel, TA = +25°C | 2 | ||
| Gate-Source Voltage (N-Channel) | VGSS | -20 | 20 | V | N-Channel, TA = +25°C | 2 | |
| Continuous Drain Current (N-Channel) | ID | 6 | A | VGS = 10V, steady state, TA = +25°C; Note 5 | 2 | ||
| Continuous Drain Current (N-Channel) | ID | 4.8 | A | VGS = 10V, steady state, TA = +70°C; Note 5 | 2 | ||
| Continuous Drain Current (N-Channel) | ID | 7.8 | A | VGS = 10V, t < 10s, TA = +25°C; Note 5 | 2 | ||
| Continuous Drain Current (N-Channel) | ID | 6.1 | A | VGS = 10V, t < 10s, TA = +70°C; Note 5 | 2 | ||
| Continuous Drain Current (N-Channel) | ID | 4.6 | A | VGS = 4.5V, steady state, TA = +25°C; Note 5 | 2 | ||
| Continuous Drain Current (N-Channel) | ID | 3.6 | A | VGS = 4.5V, steady state, TA = +70°C; Note 5 | 2 | ||
| Maximum Continuous Body Diode Forward Current (N-Channel) | IS | 2.5 | A | Note 5 | 2 | ||
| Pulsed Drain Current (N-Channel) | IDM | 60 | A | 10μs pulse, duty cycle = 1% | 2 | ||
| Drain-Source Voltage (P-Channel) | VDSS | 30 | V | P-Channel, TA = +25°C; printed as 30 V | 2 | ||
| Gate-Source Voltage (P-Channel) | VGSS | -20 | 20 | V | P-Channel, TA = +25°C | 2 | |
| Continuous Drain Current (P-Channel) | ID | -4.2 | A | VGS = -10V, steady state, TA = +25°C; Note 5 | 2 | ||
| Continuous Drain Current (P-Channel) | ID | -3.3 | A | VGS = -10V, steady state, TA = +70°C; Note 5 | 2 | ||
| Continuous Drain Current (P-Channel) | ID | -5.4 | A | VGS = -10V, t < 10s, TA = +25°C; Note 5 | 2 | ||
| Continuous Drain Current (P-Channel) | ID | -4.3 | A | VGS = -10V, t < 10s, TA = +70°C; Note 5 | 2 | ||
| Continuous Drain Current (P-Channel) | ID | -3.2 | A | VGS = -4.5V, steady state, TA = +25°C; Note 5 | 2 | ||
| Continuous Drain Current (P-Channel) | ID | -2.5 | A | VGS = -4.5V, steady state, TA = +70°C; Note 5 | 2 | ||
| Maximum Continuous Body Diode Forward Current (P-Channel) | IS | -2.5 | A | Note 5 | 2 | ||
| Pulsed Drain Current (P-Channel) | IDM | -30 | A | 10μs pulse, duty cycle = 1% | 2 | ||
| Drain-Source Breakdown Voltage (N-Channel) | BVDSS | 30 | V | VGS = 0V, ID = 250μA | 3 | ||
| Zero Gate Voltage Drain Current (N-Channel) | IDSS | 0.5 | μA | VDS = 30V, VGS = 0V | 3 | ||
| Gate-Source Leakage (N-Channel) | IGSS | -1 | 1 | μA | VGS = ±20V, VDS = 0V | 3 | |
| Gate Threshold Voltage (N-Channel) | VGS(TH) | 1 | 2 | V | VDS = VGS, ID = 250μA | 3 | |
| Static Drain-Source On-Resistance (N-Channel) | RDS(ON) | 19 | 25 | mΩ | VGS = 10V, ID = 5A | 3 | |
| Static Drain-Source On-Resistance (N-Channel) | RDS(ON) | 26 | 40 | mΩ | VGS = 4.5V, ID = 4A | 3 | |
| Diode Forward Voltage (N-Channel) | VSD | 0.7 | 1.2 | V | VGS = 0V, IS = 1.7A | 3 | |
| Drain-Source Breakdown Voltage (P-Channel) | BVDSS | -30 | V | VGS = 0V, ID = -250μA | 3 | ||
| Zero Gate Voltage Drain Current (P-Channel) | IDSS | -0.5 | μA | VDS = -30V, VGS = 0V | 3 | ||
| Gate-Source Leakage (P-Channel) | IGSS | -1 | 1 | μA | VGS = ±20V, VDS = 0V | 3 | |
| Gate Threshold Voltage (P-Channel) | VGS(TH) | -1 | -2 | V | VDS = VGS, ID = -250μA | 3 | |
| Static Drain-Source On-Resistance (P-Channel) | RDS(ON) | 43 | 50 | mΩ | VGS = -10V, ID = -5A | 3 | |
| Static Drain-Source On-Resistance (P-Channel) | RDS(ON) | 68 | 80 | mΩ | VGS = -4.5V, ID = -4A | 3 | |
| Diode Forward Voltage (P-Channel) | VSD | -0.7 | -1.2 | V | VGS = 0V, IS = -1.7A | 3 |
Materials and finish
As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | Copper | tin | Terminal Connections Indicator: See Diagram Terminals: Finish Matte Tin Annealed over Copper Leadframe. | 1 |
CAD (KiCad official)
- Symbol:
DMHC3025LSD-13 - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files:
dmhc3025lsd-13-etched.step/dmhc3025lsd-13-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);dmhc3025lsd-13.step/dmhc3025lsd-13.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Diodes Incorporated datasheet (9 pp, sha256
26061431183de856, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# DMHC3025LSD-13
**Diodes Incorporated** · MOSFETs · SO-8
DMHC3025LSD-13 from Diodes Incorporated, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | N1G | input | Gate of N-channel MOSFET N1 (VGS(TH) 1 to 2 V, VGSS ±20 V max). |
| 2 | N1D/P1D | passive | Common drain of N-channel N1 and P-channel P1, the first half-bridge output (VDSS 30 V N-channel, -30 V P-channel). |
| 3 | N1S/N2S | passive | Common source of both N-channel MOSFETs N1 and N2, the low-side return of the H-bridge. |
| 4 | N2G | input | Gate of N-channel MOSFET N2 (VGS(TH) 1 to 2 V, VGSS ±20 V max). |
| 5 | P2G | input | Gate of P-channel MOSFET P2 (VGS(TH) -1 to -2 V, VGSS ±20 V max). |
| 6 | N2D/P2D | passive | Common drain of N-channel N2 and P-channel P2, the second half-bridge output (VDSS 30 V N-channel, -30 V P-channel). |
| 7 | P1S/P2S | passive | Common source of both P-channel MOSFETs P1 and P2, the high-side supply node of the H-bridge. |
| 8 | P1G | input | Gate of P-channel MOSFET P1 (VGS(TH) -1 to -2 V, VGSS ±20 V max). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Diodes Incorporated |
| Package | SO-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Total Power Dissipation | PD | | | 1.5 | W | TA = +25°C; Note 5 | 2 |
| Thermal Resistance, Junction to Ambient, Steady State | RθJA | | | 83 | °C/W | Steady state; Note 5 | 2 |
| Thermal Resistance, Junction to Ambient, t<10s | RθJA | | | 50 | °C/W | t < 10s; Note 5 | 2 |
| Thermal Resistance, Junction to Case | RθJC | | | 14.5 | °C/W | | 2 |
| Operating and Storage Temperature Range | TJ, TSTG | -55 | | 150 | °C | | 2 |
| Drain-Source Voltage (N-Channel) | VDSS | | | 30 | V | N-Channel, TA = +25°C | 2 |
| Gate-Source Voltage (N-Channel) | VGSS | -20 | | 20 | V | N-Channel, TA = +25°C | 2 |
| Continuous Drain Current (N-Channel) | ID | | | 6 | A | VGS = 10V, steady state, TA = +25°C; Note 5 | 2 |
| Continuous Drain Current (N-Channel) | ID | | | 4.8 | A | VGS = 10V, steady state, TA = +70°C; Note 5 | 2 |
| Continuous Drain Current (N-Channel) | ID | | | 7.8 | A | VGS = 10V, t < 10s, TA = +25°C; Note 5 | 2 |
| Continuous Drain Current (N-Channel) | ID | | | 6.1 | A | VGS = 10V, t < 10s, TA = +70°C; Note 5 | 2 |
| Continuous Drain Current (N-Channel) | ID | | | 4.6 | A | VGS = 4.5V, steady state, TA = +25°C; Note 5 | 2 |
| Continuous Drain Current (N-Channel) | ID | | | 3.6 | A | VGS = 4.5V, steady state, TA = +70°C; Note 5 | 2 |
| Maximum Continuous Body Diode Forward Current (N-Channel) | IS | | | 2.5 | A | Note 5 | 2 |
| Pulsed Drain Current (N-Channel) | IDM | | | 60 | A | 10μs pulse, duty cycle = 1% | 2 |
| Drain-Source Voltage (P-Channel) | VDSS | | | 30 | V | P-Channel, TA = +25°C; printed as 30 V | 2 |
| Gate-Source Voltage (P-Channel) | VGSS | -20 | | 20 | V | P-Channel, TA = +25°C | 2 |
| Continuous Drain Current (P-Channel) | ID | -4.2 | | | A | VGS = -10V, steady state, TA = +25°C; Note 5 | 2 |
| Continuous Drain Current (P-Channel) | ID | -3.3 | | | A | VGS = -10V, steady state, TA = +70°C; Note 5 | 2 |
| Continuous Drain Current (P-Channel) | ID | -5.4 | | | A | VGS = -10V, t < 10s, TA = +25°C; Note 5 | 2 |
| Continuous Drain Current (P-Channel) | ID | -4.3 | | | A | VGS = -10V, t < 10s, TA = +70°C; Note 5 | 2 |
| Continuous Drain Current (P-Channel) | ID | -3.2 | | | A | VGS = -4.5V, steady state, TA = +25°C; Note 5 | 2 |
| Continuous Drain Current (P-Channel) | ID | -2.5 | | | A | VGS = -4.5V, steady state, TA = +70°C; Note 5 | 2 |
| Maximum Continuous Body Diode Forward Current (P-Channel) | IS | -2.5 | | | A | Note 5 | 2 |
| Pulsed Drain Current (P-Channel) | IDM | -30 | | | A | 10μs pulse, duty cycle = 1% | 2 |
| Drain-Source Breakdown Voltage (N-Channel) | BVDSS | 30 | | | V | VGS = 0V, ID = 250μA | 3 |
| Zero Gate Voltage Drain Current (N-Channel) | IDSS | | | 0.5 | μA | VDS = 30V, VGS = 0V | 3 |
| Gate-Source Leakage (N-Channel) | IGSS | -1 | | 1 | μA | VGS = ±20V, VDS = 0V | 3 |
| Gate Threshold Voltage (N-Channel) | VGS(TH) | 1 | | 2 | V | VDS = VGS, ID = 250μA | 3 |
| Static Drain-Source On-Resistance (N-Channel) | RDS(ON) | | 19 | 25 | mΩ | VGS = 10V, ID = 5A | 3 |
| Static Drain-Source On-Resistance (N-Channel) | RDS(ON) | | 26 | 40 | mΩ | VGS = 4.5V, ID = 4A | 3 |
| Diode Forward Voltage (N-Channel) | VSD | | 0.7 | 1.2 | V | VGS = 0V, IS = 1.7A | 3 |
| Drain-Source Breakdown Voltage (P-Channel) | BVDSS | -30 | | | V | VGS = 0V, ID = -250μA | 3 |
| Zero Gate Voltage Drain Current (P-Channel) | IDSS | | | -0.5 | μA | VDS = -30V, VGS = 0V | 3 |
| Gate-Source Leakage (P-Channel) | IGSS | -1 | | 1 | μA | VGS = ±20V, VDS = 0V | 3 |
| Gate Threshold Voltage (P-Channel) | VGS(TH) | -1 | | -2 | V | VDS = VGS, ID = -250μA | 3 |
| Static Drain-Source On-Resistance (P-Channel) | RDS(ON) | | 43 | 50 | mΩ | VGS = -10V, ID = -5A | 3 |
| Static Drain-Source On-Resistance (P-Channel) | RDS(ON) | | 68 | 80 | mΩ | VGS = -4.5V, ID = -4A | 3 |
| Diode Forward Voltage (P-Channel) | VSD | | -0.7 | -1.2 | V | VGS = 0V, IS = -1.7A | 3 |
## Materials and finish
As the datasheet states them (page.json `metadata.appearance`; the 3D model's colours follow it).
| Part | Material | Colour / plating | Datasheet says | Page |
|---|---|---|---|---|
| contacts | Copper | tin | Terminal Connections Indicator: See Diagram Terminals: Finish Matte Tin Annealed over Copper Leadframe. | 1 |
## CAD (KiCad official)
- Symbol: `DMHC3025LSD-13`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files: `dmhc3025lsd-13-etched.step` / `dmhc3025lsd-13-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `dmhc3025lsd-13.step` / `dmhc3025lsd-13.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Diodes Incorporated datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588879940045037568) (9 pp, sha256 `26061431183de856`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/dmhc3025lsd-13-datasheet.pdf)